MOSFET MARKING JB Search Results

SI5855DC-T1-E3

Abstract: Si5853DC Si5855DC Si5855DC-T1-GE3 7223-2
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)

Contextual Info: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr

Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)

Si5858DU-T1-GE3

Abstract: si5858
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr

Marking Code JB

Abstract: Si5858DU-T1-GE3 C1B7
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free • LITTLE FOOT Plus Power MOSFET

IDTP9090

Contextual Info: High and Low Side N-Channel Gate Driver Product Datasheet IDTP9090 Features Description • Input Voltage Range: 4.5 to 5.5 • Output Voltage Range: Control Range 0-30V  Peak MOSFET Drive current into 3nF • LGDRV Sink 3A  LGDRV Source 1A  UGDRV Sink

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Mosfet MARKING A1

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the

Marking Code JB

Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky

Contextual Info: IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in

CA3030

Abstract: marking 1AJ MOSFET marking KE CPH3304 CPH6102 AB mosfet marking jb pcp sanyo CG CPH3404 CPH6302 CPH6202
Contextual Info: SANYO New Products of CPH3/6 Package Series 1 Power M O S F E T s and Bip Transistors How to name C P H 3/5/6 package products ♦ M o u n t height o f 0.9mm and best suited for small and thin portable equipment ♦A llo w a b le power dissipation o f 1.6W.

MOSFET current sense amplifier

Abstract: IR3550
Contextual Info: 50A Integrated PowIRstage FEATURES IR3551 DESCRIPTION • Peak efficiency up to 94.5% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V

Contextual Info: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V

Z921

Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
Contextual Info: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

smd diode wv4

Abstract: SMD wv4 Diode BFT smd wv4 diode wv4 smd marking WV4 smd diode WV1 IRL540 IRL540S J-10
Contextual Info: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

marking WV4

Abstract: smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd
Contextual Info: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

jd 1803 IC

Abstract: jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR
Contextual Info: RT9167/A Low-Noise, Fixed Output Voltage, 200mA/500mA LDO Regulator General Description Features The RT9167/A is a 200mA/500mA low dropout and z Stable with Low-ESR Output Capacitor low noise micropower regulator suitable for portable z Low Dropout Voltage 220mV and 200mA

Contextual Info: International USSR Rectifier po-mois IRFBC40S/L PRELIMINARY HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching