MOSFET IOR 144 Search Results

Contextual Info: 4655452 DQmSflM Q4R • INR PD-9.455D International ioR R ectifier _ IRC830 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: I p j -0 p p q j- j q p q I Provisional Data Sheet No. PD-9.1550 IOR Rectifier HEXFET POWER MOSFET IRFN340 N- CHA N N E L 400 Volt, 0.55Q HEXFET H E X F E T technology is the key to International Rectifier's advanced line of power M O S FE T transistors.The effi­

IRF9Z34N

Contextual Info: International I R Rectifier • • • • • • PD - 9.1485A IRF9Z34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated VDSS = -55V 0.10Q |D = -17A

Diode SMD ED 9C

Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Contextual Info: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are

IRF530S

Abstract: DIODE smd marking A3 AN-994 SMD-220 pd9897
Contextual Info: PD-9.897 International gjg Rectifier IRF530S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100 V

TDA 6172

Abstract: TDA 7321 TDA 1883
Contextual Info: I , .• I International I R Rectifier PRELIMINARY P D 9 .1 3 8 6 IRF5305S HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • Surface Mount • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs

IRF7307

Abstract: marking 3AM AN-994 p-channel-mosfet
Contextual Info: PD - 9.1242B ¿Inational IQR]Rectifier IRF7307 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

diode smd marking 5j

Abstract: MARKING CODE SMD IC 12B Diode smd 5j IOR 451
Contextual Info: PD 9.1436 International IGR Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V dss =

455D

Abstract: IRC830 fsv0 79i2
Contextual Info: International S Rectifier PD-9.455D IRC830 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = 1 lD = 4.5A Description

s43a

Abstract: IRLR110 IRLU110 marking WV1 marking K3R
Contextual Info: PD-9.633A International Ëm' Rectifier IRLR110 IRLU110 HEXFEf Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR110 Straight Lead (IRLU110) Available in Tape & Reel Logic-Level Gate Drive ^ dss - 100V

Contextual Info: International PD - 9.1242B |IQR|Rectifier IRF7307 PRELIMINARY HEXFET Power M OSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

AN-994

Abstract: IRLR024 IRLU024
Contextual Info: PD-9.625A International S Rectifier IRLR024 IRLU024 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Surface Mount IRLR024 Straight Lead (IRLU024) Available in Tape & Reel Logic-Level Gate Drive 60 V Vdss _ R DS(on) = 0 . 1 0 0 • RDS(on) S p e cifie d a t V g s = 4 V & 5V

MOSFET ior 144

Abstract: IRFM044 IRFM044D
Contextual Info: Data Sheet No. PD-9.708A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ44 N-CHANNEL 60 Volt, 0.040 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

IRFV064

Abstract: top 258 pn
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFVÜB4 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International R ectifier’s advanced line of power M O S F E T transistors.

Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFVÜB4 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International R ectifier’s advanced line of power M O S F E T transistors.

OA7 diode

Abstract: AL 1450 DV
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.

TRANSISTOR D 1785

Abstract: audio output TRANSISTOR PNP MS-026 TL1466I TL1466IPM
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

audio output TRANSISTOR PNP

Abstract: MS-026 TL1466I TL1466IPM TL1466IPMR
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

MS-026

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

audio output TRANSISTOR PNP

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4 MS-026
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz