MOSFET IGSS 100UA Search Results

Contextual Info: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and

Contextual Info: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and

Mosfet

Abstract: SSF22A5E
Contextual Info: SSF22A5E 20V N-Channel MOSFET Main Product Characteristics: VDSS 20V RDS on 3Ω ID 238mA Pin Assignment Schematic Diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product

marking KN

Abstract: n-channel enhancement mosfet
Contextual Info: SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment.

S2N7002KT

Abstract: n-channel enhancement mosfet S2N7002
Contextual Info: S2N7002KT N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES   Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS   Power Management Load Switch

3018G

Abstract: UK3018G Device Marking 313
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018BW Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET  DESCRIPTION The UTC UK3018BW is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for

EM6M2

Abstract: diode marking U22
Contextual Info: TYPE PRODUCTS EMT6 PAGE EM6M2 1.TYPE EM6M2 2.STRUCTURE SILICON N-CHANNEL / P-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/5 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 Tr1 : Nch 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ 20V GATE-SOURCE VOLTAGE VGSS ・・・ ±8V

uk3019

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC UK3019 is a silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

"MOSFET Module"

Abstract: "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module
Contextual Info: QJD0232001 320 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Power MOSFET Module 320 Amperes 250 Volts Error! Not a valid link. Description: Powerex Dual MOSFET Half Bridge Modules with Avalanche Body Diodes

3PD200

Abstract: 2SK3019 UK3019 UK3019L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION The UTC 2SK3019 is a Silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

2.5V "Power MOSFET"

Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

2SK3018

Abstract: 3018G 2SK3018 UTC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

SCG3019

Abstract: MosFET
Contextual Info: SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 A FEATURES      M Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF730-E Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: MOSFET IGSS 100uA mosfet vgs 5v PM-0109
Contextual Info: N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE NO. : PM-0109 1. Scope : 1-1. This specification applies to N channel silicon MOSFET chips, Device No. PM-0109 1-2. Built-in g-s protection diode 2. Structure : 2-1. Planar type . 2-2. Electrodes . Source : Aluminum alloy .

SUM6K1N

Abstract: MosFET
Contextual Info: SUM6K1N 0.1A , 30V , RDS ON 8  N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70-M Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N70-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: mosfet vgs 5v n channel silicon mosfet MOSFET IGSS 100uA n channel mosfet vds max 400v, id max 500mA diode gate PM-0112
Contextual Info: N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE NO. : PM-0112 1. Scope : 1-1. This specification applies to N channel silicon MOSFET chips, Device No. PM-0112 1-2. Built-in g-s protection diode 2. Structure : 2-1. Planar type . 2-2. Electrodes . Source : Aluminum alloy .

"MOSFET Module"

Abstract: mosfet 400a 200 ampere MOSFET datasheet QJD0180001 "Battery Chargers" 7272 mosfet 800 v power mosfet module 400A mosfet
Contextual Info: QJD0180001 800 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Power MOSFET Module 800 Amperes 100 Volts Error! Not a valid link. Description: Powerex Dual MOS Half Bridge Modules with Avalanche Body Diodes feature low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: PM-0107 mosfet vgs 5v
Contextual Info: N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE NO. : PM-0107 1. Scope : 1-1. This specification applies to N channel silicon MOSFET chips, Device No. PM-0107 1-2. Built-in g-s protection diode 2. Structure : 2-1. Planar type . 2-2. Electrodes . Source : Aluminum alloy .