MOSFET IGSS 100A Search Results

IRFC3810B

Abstract: IRFC3810
Contextual Info: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 100N02 Preliminary Power MOSFET 100A, 15V N-CHANNEL POWER TRENCH MOSFET „ DESCRIPTION The UTC 100N02 is an N-channel it uses UTC’s advanced technology to minimum on-state resistance, low switching speed. The UTC 100N02 is generally

MOSFET 50V 100A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching

ssf7508

Abstract: Mosfet
Contextual Info: SSF7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6mΩ (typ.) ID 100A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF1010
Contextual Info: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03 100A, 30V N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-251 TO-220  DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

ut100n03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

UT100N03

Abstract: UT100N03L-TQ2-T power mosfet 100A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

Contextual Info: MITSUBISHI Neh POWER MOSFET I FS100VSJ-03 HIGH-SPEED SWITCHING USE - » FS1OOVSJ-03 * * • 4V DRIVE • VDSS . 30V • rDS ON (MAX) .4 . 7 m ii • Id . 100A

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK http://onsemi.com Features • On-resistance RDS on 1=5.0mΩ(typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C

Contextual Info: Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5m , ATPAK ht t p://onse m i.c om Features • On-resistance RDS on 1=5.0m (typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids

Contextual Info: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency

CAS100H12

Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Contextual Info: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode

E80276

Abstract: FM200TU-3A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated

"MOSFET Module"

Abstract: E80276 FM200TU-07A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated