MOSFET FOR 900V, 6A Search Results

09n90

Abstract: 09N90C ssm09n90cgw marking codes transistors SSs 09n9 09n90cgw
Contextual Info: SSM09N90CGW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 900V R DS ON 1.4Ω ID 7.6A DESCRIPTION The SSM09N90CGW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC

FQA6N90C

Abstract: F109
Contextual Info: QFET FQA6N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

mosfet for 900V, 6A

Contextual Info: SSFP6N90 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 900V Simple Drive Requirement ID25 = 6A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

mosfet for 900V, 6A

Abstract: F109 FQA6N90C
Contextual Info: QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

2sk3532

Abstract: mosfet for 900V, 6A 2SK3532-01MR
Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3532-01MR 900V/2.5Ω/6A 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current

2SK3531-01

Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3531-01 900V/2.5Ω/6A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current

Contextual Info: QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

2SK3676-01L

Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3676-01L,S,SJ 900V/2.5Ω/6A 1) Package T-PACK L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

Contextual Info: SSS6N90A Advanced Power MOSFET FEATURES BVqss ~ 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 t-iA Max. @ VDS= 900V

Contextual Info: SSP6N90A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |aA Max. @ yos = 900V ■ Low RDS(ON) : 1.829 Q. (Typ.)

Contextual Info: SSF9N90A Advanced Power MOSFET FEATURES BV0ss ~ 900 V ^DS on = 1 .4 Q lD = 6 A • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ ■ Extended Safe Operating Area Lower Leakage Current : 25 p A (M a x ) @ VDS = 900V

LT 428 mosfet

Contextual Info: SSH6N90A Advanced Power MOSFET FEATURES B ^ dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 900V

SSH7N90A

Contextual Info: SSH7N90A Advanced Power MOSFET FEATURES B ^ Lower Input Capacitance ^ D S o n = • Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V ■ Low RDS(0N) : 1.247 Q (Typ.) -4 ■ 900 V - 1.8 Q > Rugged Gate Oxide Technology

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Preliminary Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: SSF9N90A Advanced Power MOSFET FEATURES • Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|aA Max. @ VDS = 900V ■ Low R0S(on) •' 0.938 Q (Typ.) - 900 V ^DS(on) = 1.4 n II Avalanche Rugged Technology

Contextual Info: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)

SSF7N90A

Abstract: D-0402
Contextual Info: SSF7N90A Advanced Power MOSFET FEATURES = 9 0 0 R û S o n = 1 .8 5 A b • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 fiA (Max.) @ VDS= 900V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a