MOSFET EQUIVALENT Search Results

DL2M100N5

Abstract: dawin
Contextual Info: D W DAWIN Electronics TM DL2M100N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET

MOSFET Drivers pin compatible with

Contextual Info: SM74101 SM74101 Tiny 7A MOSFET Gate Driver Literature Number: SNOSBA2 SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high

DL2M50N5

Abstract: mosfet 500V 50A Mosfet 100V 50A
Contextual Info: D W DAWIN Electronics TM DL2M50N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET

QS6M4

Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.

LM5112MY

Abstract: LM5112
Contextual Info: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with

equivalent 2sk2837 mosfet

Contextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

MTC3N100E

Abstract: SHD218414 SHD218414A SHD218414B
Contextual Info: SHD218414 SHD218414A SHD218414B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 3.0 Ohm, 3A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to MTC3N100E

Contextual Info: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

UGATE

Abstract: RT9624AZQW
Contextual Info: RT9624A Single Phase Synchronous Rectified Buck MOSFET Driver General Description Features The RT9624A is a high frequency, synchronous rectified, single phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving

Contextual Info: RT9624B Single Phase Synchronous Rectified Buck MOSFET Driver General Description Features The RT9624B is a high frequency, synchronous rectified, single phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving

L6741

Abstract: JESD97 L6741TR
Contextual Info: L6741 High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management

Contextual Info: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Hermetic Metal Package œ Fast Switching œ Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS

IXTM20N60

Abstract: SHD239607 mosfet 300V 10A type
Contextual Info: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

Contextual Info: RT9625A Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625A is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.

Contextual Info: RT9625B Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625B is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.

Diode 1754

Contextual Info: RT9624D Single Phase Synchronous Rectified Buck MOSFET Driver General Description Features The RT9624D is a high frequency, synchronous rectified, single phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving

RT9625

Contextual Info: RT9625A Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625A is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

F5055

Abstract: TRAF FUSE FUJI
Contextual Info: http://www.fujisemi.com F5055 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching

mosfet 300v 10a

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS