MOSFET EQUIVALENT Search Results

LM5112MY

Abstract: LM5112
Contextual Info: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with

equivalent 2sk2837 mosfet

Contextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s

Contextual Info: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Hermetic Metal Package œ Fast Switching œ Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

IC 4051 data sheet

Abstract: IRF9140 SHD239409
Contextual Info: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series MAXIMUM RATINGS

mosfet equivalent

Abstract: selection criteria of bipolar transistor totempole driver resonant converter
Contextual Info: FEATURE ARTICLE Applications Dictate Bipolar or MOSFET Power Switch Choices Despite huge investments in MOSFET technologies over recent years, bipolar transistors have continued to be developed to rival or exceed MOSFET performance in many applications. It's therefore important

48V SMPS

Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

Contextual Info: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching

Contextual Info: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10

Contextual Info: SENSITRON SEMICONDUCTOR SHD226410 TECHNICAL DATA DATA SHEET 621, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -200 Volt, 0.5 Ohm, -7.7A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY9240 Series MAXIMUM RATINGS

shd226401

Contextual Info: SENSITRON SEMICONDUCTOR SHD226401 TECHNICAL DATA DATA SHEET 581, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.035 Ohm, 20A MOSFET œ œ œ œ Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY044 Series MAXIMUM RATINGS

IRC140

Contextual Info: SENSITRON SEMICONDUCTOR SHD219402 TECHNICAL DATA DATA SHEET 681, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.092 Ohm, 18A MOSFET œ Isolated Hermetic Ceramic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRC140 Series

IRF9140

Abstract: SHD219409 SHD2199
Contextual Info: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

Contextual Info: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Ceramic Hermetic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFY240 MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50

Contextual Info: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.3 Ohm, 9.0A MOSFET Low RDS on Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

IRFY9240

Abstract: SHD226410
Contextual Info: SENSITRON SEMICONDUCTOR SHD226410 TECHNICAL DATA DATA SHEET 621, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -200 Volt, 0.5 Ohm, -7.7A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY9240 Series MAXIMUM RATINGS

IRFY044

Abstract: SHD226401
Contextual Info: SENSITRON SEMICONDUCTOR SHD226401 TECHNICAL DATA DATA SHEET 581, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.035 Ohm, 20A MOSFET œ œ œ œ Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY044 Series MAXIMUM RATINGS

IRFY240

Abstract: SHD219403
Contextual Info: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Ceramic Hermetic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFY240 MAXIMUM RATINGS