MOSFET DATA BOOK Search Results

Mosfet J49

Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET

C549B

Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS

sd 431 transistor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

Mosfet J49

Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •

D1843

Abstract: MP45F 2SK3326B-S17-AY 2sk3326b 2SK3326
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1843

Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK4079

Abstract: QN7002
Contextual Info: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.

PA2680T1E

Abstract: G17661EJ2V0DS00
Contextual Info: DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)

2SJ687

Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)

6A4 DIODE

Abstract: 30-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ` µPD168001 MONOLITHIC 4-CHANNEL H BRIDGE + LOW-SIDE SWITCH DESCRIPTION The µPD168001 is a monolithic 4-channel H bridge driver and low-side switch IC that uses a power MOSFET at the output stage. Because of the MOSFET at the output stage, both the inputs and outputs are interfaced by PWM

Contextual Info: DATA SHEET Tentative Part No. NN30311A Package Code No. ⎯ Publication date: July 2012 Ver. EB 1 NN30311A NN30311A (Tentative) 6A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET „ Overview NN30311A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET,

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE,NP88N04DHE,NP88N04EHE,NP88N04KHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

nec 88n04

Abstract: 88n04 NP88N04MHE NP88N04EHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE NP88N04KHE-E1-AY NP88N04KHE-E2-AY NP88N04CHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

NP32N055HDE

Abstract: NP32N055IDE NP32N055SDE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

d1415

Abstract: NP36N055SLE NP36N055HLE NP36N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.

NP32N055SLE

Abstract: NP32N055HLE NP32N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE,NP32N055ILE,NP32N055SLE SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.

NP34N055SLE

Abstract: NP34N055HLE NP34N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.

NP34N055SHE

Abstract: NP34N055HHE NP34N055IHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE, NP34N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.