MOSFET DATA BOOK Search Results

mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET

MOSFET BOOK

Abstract: book mosfet
Contextual Info: 1233-7091 Septem ber 1997 Advanced Power MOSFET High Voltagei 700~~900\ ' 1998 DATA BOOK ELECTRONICS

Mosfet J49

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND

uPA2352

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352 Dual N-CHANNEL MOSFET DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2352 is a Dual N-channel MOSFET designed for LithiumIon battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352T1P DUAL Nch MOSFET DESCRIPTION OUTLINE DRAWING Unit: mm The μ PA2352T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

2mosfet Nch

Abstract: nec li ion G17995EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2350 DUAL Nch MOSFET FOR SWITCHING DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2350 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2351 DUAL Nch MOSFET FOR SWITCHING DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2351 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Mosfet J49

Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET

G1974

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2351T1P DUAL Nch MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2351T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2350T1P DUAL Nch MOSFET FOR SWITCHING DESCRIPTION OUTLINE DRAWING Unit: mm The μ PA2350T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

PA2352B

Abstract: aag2
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352B DUAL N-CHANNEL MOSFET OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2352B is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

PA2354

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2354 DUAL N-CHANNEL MOSFET OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2354 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

PA2350B

Abstract: G19313EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2350B DUAL N-CHANNEL MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2350B is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2353 DUAL N-CHANNEL MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2353 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

D1781

Abstract: 2SK1588 TC-2352A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not

j718

Abstract: VK200/10-3B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

marking g20

Abstract: 2SK1658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for

IRFZ44N

Abstract: FP60N bs108 mosfet fp75n FP50N
Contextual Info: MOSFET DEVICE INDEX Note: For a complete listing of General Semiconductor part numbers, refer to the Master Data Book Index on pages 6-11. 2N7000 . 220

MOSFET BOOK

Contextual Info: ft 1232-7091 Septem ber 1997 Advanced Power MOSFET^ Medium Voltage 200 ~ 600 V 1998 DATA BOOK E L E C T R O N IC S

d1780

Abstract: 2SK1657 TC236
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which 2.8 ±0.2 0.4 +0.1 –0.05 can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for

sd 431 transistor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY

905-170

Abstract: MRF3010 VK200 VK20019-4B
Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,