MOSFET CATALOG Search Results
MOSFET CATALOG Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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MOSFET CATALOG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). |
Original |
US6M11 R0039A | |
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Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. |
Original |
R0039A | |
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Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. |
Original |
R0039A | |
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Contextual Info: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) |
Original |
R0039A | |
MCH3456
Abstract: MCH5826 SS05015SH
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Original |
MCH5826 ENN8163 MCH3456) SS05015SH) MCH3456 MCH5826 SS05015SH | |
CPH5802Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004) |
OCR Scan |
ENN6899 CPH5802 CH3306) SBS004) CPH5802] | |
F5033
Abstract: MOSFET 30v sop-8
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Original |
F5033 1000mm2PCB F5033 MOSFET 30v sop-8 | |
ENN8206
Abstract: CPH5810 MCH3312
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CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312 | |
ss1001
Abstract: MCH3445 MCH5812 SS10015M
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Original |
MCH5812 ENN7998 MCH3445) SS10015M) ss1001 MCH3445 MCH5812 SS10015M | |
CPH5808
Abstract: MCH3409 SBS004 77705
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CPH5808 ENN7770 MCH3409) SBS004) CPH5808 MCH3409 SBS004 77705 | |
mch3412
Abstract: ta3173 DIODE MARKING 3173 TA-317
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ENN6981 CPH5805 MCH3412) SBS006) CPH5805] mch3412 ta3173 DIODE MARKING 3173 TA-317 | |
SCH1412
Abstract: SCH2808
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Original |
SCH2808 ENN8360 SCH1412) SS0503) SCH1412 SCH2808 | |
MCH3408
Abstract: MCH5803 SBS006M
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ENN6958 MCH5803 MCH3408) SBS006M) MCH5803] MCH3408 MCH5803 SBS006M | |
MCH3408
Abstract: MCH5804 SBS007M IT03104 IT03105
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ENN6942 MCH5804 MCH3408) SBS007M) MCH5804] MCH3408 MCH5804 SBS007M IT03104 IT03105 | |
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86886
Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
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CPH5846 EN8688 MCH3309) SS10015M) 86886 diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001 | |
MCH3405
Abstract: MCH5801 SBS007M TA3100
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ENN6941 MCH5801 MCH3405) SBS007M) MCH5801] MCH3405 MCH5801 SBS007M TA3100 | |
MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
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CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG | |
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Contextual Info: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching |
OCR Scan |
FX853 FX853 2SK1467 SB05-05P, 10//S, | |
MCH5835
Abstract: MCH3443 SS0503SH
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Original |
MCH5835 ENA0655A MCH3443) SS0503SH) A0655-6/6 MCH5835 MCH3443 SS0503SH | |
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Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171 |
Original |
ENN6980 CPH5804 MCH3312) SBS006M) CPH5804] | |
TA-3176
Abstract: marking QB MCH3308 MCH5802 SBS006M
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Original |
ENN6961 MCH5802 MCH3308) SBS006M) MCH5802] TA-3176 marking QB MCH3308 MCH5802 SBS006M | |
TA 8403 A
Abstract: w507 FW507 MCH3312 SB1003M
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Original |
FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507 | |
MCH3307
Abstract: SBS004 ENN8235 2171A
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Original |
CPH5838 ENN8235 MCH3307) SBS004) MCH3307 SBS004 ENN8235 2171A | |
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Contextual Info: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171 |
OCR Scan |
ENN6980 CPH5804 MCH3312) SBS006M) CPH5804] | |