MOSFET AMPLIFIER Search Results

3N170

Contextual Info: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

3N163

Abstract: TO72 package
Contextual Info: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

2N4352

Contextual Info: 2N4352 N-CHANNEL MOSFET The 2N4352 is an enhancement mode N-Channel Mosfet The 2N4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

td 1603

Contextual Info: 3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

Contextual Info: LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

2n7224U

Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Contextual Info: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

international rectifier

Abstract: IRFM260 4.5v to 100v input regulator
Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFM360

Contextual Info: PD - 90712B POWER MOSFET THRU-HOLE TO-254AA IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

2N7236U

Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Contextual Info: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

Contextual Info: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can

48V SMPS

Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

Contextual Info: 2SK1088-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

TCH-80

Contextual Info: 2SK1387-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: CA3130 peak detector about the IC ca3130 CA3130 CA3130 data sheet 2n3055 pinout ca3130 equivalent operational amplifier discrete schematic timer astable multivibrator 2n3055 terminals of 2n3055
Contextual Info: CA3130, CA3130A Data Sheet October 2002 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are

300 watt mosfet amplifier

Abstract: RA30H4452M RA30H4452M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

MIL-PRF-19500/592

Abstract: MOSFET 150 N IRF IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD-91551D POWER MOSFET SURFACE MOUNT SMD-1 IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

diode.18

Abstract: IRF 450 MOSFET IRFM240 JANTX2N7219 JANTXV2N7219 A1276 90555
Contextual Info: PD - 90555E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

ra33h1516m1

Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

Contextual Info: CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM7590 is an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low

H11S

Abstract: RA06H8285M RA06H8285M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to

IRFM9140

Abstract: JANTX2N7236 JANTXV2N7236
Contextual Info: PD - 90495E POWER MOSFET THRU-HOLE TO-254AA IRFM9140 JANTX2N7236 JANTXV2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

JANTXV2N7219U

Abstract: IRF 450 MOSFET IRFN240 JANTX2N7219U smd-1
Contextual Info: PD - 91548C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN240 JANTX2N7219U JANTXV2N7219U REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

irf 640

Abstract: IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM
Contextual Info: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International