MOSFET 8A 900V Search Results

W9NK90Z

Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
Contextual Info: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

W9NK90Z equivalent

Abstract: P9NK90 P9NK90Z mosfet 8A 900V TO-220
Contextual Info: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

P9NK90

Abstract: w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z STB9NK90Z
Contextual Info: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET Features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z 900V <1.3Ω

W9NK90Z

Abstract: W9NK90Z equivalent P9NK90 p9nk90z F9NK90Z STP9NK90Z MOSFET 900V 8A TO-220 L9 Zener STF9NK90Z STW9NK90Z
Contextual Info: STP9NK90Z - STF9NK90Z STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK90Z STF9NK90Z STW9NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V 900 V 900 V < 1.3 Ω < 1.3 Ω < 1.3 Ω 8A 8A

STW8NB90

Abstract: TJ5A
Contextual Info: STW8NB90 N - CHANNEL 900V - 1.1Ω - 8A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW8NB90 • ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 8A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N90 Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

8n90

Abstract: 8n90l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

W9NK90Z

Abstract: MOSFET 900V 8A TO-220 W9NK90Z equivalent STW9NK90Z MOSFET STW9NK90Z P9NK90 STB9NK90Z STP9NK90Z b9nk90z P9NK90Z
Contextual Info: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A - TO-220/FP-D²PAK-TO-247 Zener-Protected SuperMESH MOSFET Package General features VDSS RDS on 900 900 900 900 <1.3 Ω <1.3 Ω <1.3 Ω <1.3 Ω Type STB9NK90Z STW9NK90Z STP9NK90Z

Contextual Info: STW8NB90 N - CHANNEL 900V - 1 .3û - 8A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB90 • . . . . 900 V R d S oii < 1.45 a Id 8 A TYPICAL RDS(on) = 1.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

n-channel 900v 9a

Abstract: STW8NB90 STH8NB90FI
Contextual Info: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

W8NB90

Abstract: w8nb st 247 STW8NB90
Contextual Info: STW8NB90 N - CHANNEL 900V - 1.1Ω - 8A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE ST W8NB90 • ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 8 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

id 0835

Abstract: STW8NB90 STH8NB90FI
Contextual Info: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SSH8N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RoS on = 1.6 ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area < CO II _Q ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V

SSH7N90A

Contextual Info: SSH7N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 900V Low RDS(ON) : 1.247 Q. (Typ.)

Contextual Info: SSF8N90A A dvanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 900 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ VDS= 900V

Contextual Info: SSF7N90A Advanced Power MOSFET FEATURES b vdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A (M a x ) @ VDS = 900V

Contextual Info: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V

ssf7n90a

Contextual Info: SSF7N90A Advanced Power MOSFET FEATURES b v dss • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25^A Max. @ VDS = 900V ■

yx 801

Abstract: yx 801 ic IC yx 801 8N90A IF8AA yx+801+led
Contextual Info: SSF8N90A Advanced Power MOSFET FEATURES BVdss “ 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = 1.6 a ■ Lower Input Capacitance lD = 5.5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|iA (Max.) @ VDS = 900V

SSH8N90A

Contextual Info: SSH8N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V

SSH7N90A

Contextual Info: SSH7N90A Advanced Power MOSFET FEATURES B ^ Lower Input Capacitance ^ D S o n = • Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V ■ Low RDS(0N) : 1.247 Q (Typ.) -4 ■ 900 V - 1.8 Q > Rugged Gate Oxide Technology

SSH7N90A

Contextual Info: Advanced SSH7N90A Power MOSFET FEATURES BVDSS - 900 V 1.8 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V