MOSFET 800V 17A Search Results

Contextual Info: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET COOLMOS D3PAK TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D

3N80C

Abstract: FQPF*3N80C DATE CODE FAIRCHILD
Contextual Info: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

8n80c

Abstract: 8n80 FQP8N80C FQPF
Contextual Info: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

APT17N80BC3

Abstract: APT17N80SC3
Contextual Info: APT17N80BC3 APT17N80SC3 800V 17A 0.290Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS

10V11A

Contextual Info: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS

APT17N80CC3

Contextual Info: APT17N80CC3 800V 11.5A 0.320Ω Super Junction MOSFET TO-254 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-254 Package D G S MAXIMUM RATINGS Symbol VDSS

P8NK80ZFP

Abstract: w8nk80z zener diode 3.0 b2 P8NK80 4.7 B2 zener B2 marking code Zener ZENER DIODE zener diode 15v STP7NK80ZFP stp8nk
Contextual Info: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z

Contextual Info: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S D G COOLMOS SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode

Contextual Info: APT17N80BC3 800V 17A 0.290Ω Super Junction MOSFET COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D

Contextual Info: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D

Contextual Info: APT34N80B2C3 G APT34N80LC3(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated

diode IN 34A

Abstract: APT34N80B2C3 APT34N80LC3
Contextual Info: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D

Contextual Info: APT17F80B APT17F80S 800V, 17A, 0.65Ω Max, trr ≤250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

transistors mj 1504

Abstract: 141F APT31N80JC3 APT15DF100
Contextual Info: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package

P8NK80ZFP

Contextual Info: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A

APT31N80JC3

Contextual Info: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode

PF355

Abstract: APT31N80JC3 APT15DF100
Contextual Info: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package

P8NK80ZFP

Abstract: P8NK80 w8nk80z P8NK80Z STP8NK80ZFP STW8NK80Z JESD97 STP8NK80Z *p8nk80 w8nk80
Contextual Info: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A

Contextual Info: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A

W18NK80Z

Abstract: STW18NK80Z
Contextual Info: STW18NK80Z N-CHANNEL 800V - 0.34Ω - 18A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW18NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.38 Ω 18 A 300 W TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

APT0406

Abstract: APT0502 APTM120VDA57T3G "VDSS 800V" mosfet
Contextual Info: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC Features

Contextual Info: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC Features

Contextual Info: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570m typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction PFC  Interleaved PFC Features