MOSFET 7121 Search Results

Contextual Info: LF PA K 56 BUK7Y12-100E N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

driver IC for IRF540 MOSFET

Abstract: MOSFET 7121 mosfet 7124 12v incandescent lamp driver
Contextual Info: MIC5020 IMCaSL Current-Sensing Low-Side MOSFET Driver General Description Features The MIC5020 low-side MOSFET driver is designed to oper­ ate at frequencies greater than 100kHz 5kHz PWM tor 2% to 100% duty cycle and is an ideal choice for high-speed applications such as motor control, SMPS (switch mode

tr1007

Abstract: MOSFET 7121
Contextual Info: Ordering number : ENN7121 CPH3317 P-Channel Silicon MOSFET CPH3317 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3317] 2.9 0.15 0.6 0.4 0.2 • 3 2 1

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Contextual Info: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

0809 al

Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Contextual Info: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE

IC SO5

Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
Contextual Info: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS

8051 microcontroller LED dot matrix 8*8

Abstract: RADIO RECEIVER IC tea5591 OQ8844T tda1072 philips ic fm am stereo receiver philips all transistor car radio PCF85xxC-2 Family car amplifier class d tea5591a 8051 microcontroller LED dot matrix
Contextual Info: Philips Semiconductors Semiconductors for Radio, Audio and CD/DVD Systems_ Functional Index Types added to the range since the last issue of the IC01 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet.

i2c-bus "volume control"

Abstract: TDA3653B TDA3810 vga to tv converter ic audio video uhf transmitter circuit TDA8361 audio video uhf transmitter tda8362 tda vertical IC tv crt TDA2595
Contextual Info: Philips Semiconductors Semiconductors for Televsion and Video Systems Functional index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet.

SMPS flyback 2kW

Abstract: schematic diagram smps VIPer 50A VIPER100 Application Note VIPer 50A VIPER100 AN946 viper flyback transformer an946 VIPER flyback 100W schematic mans EKR 1000 Self Oscillating Flyback Converters
Contextual Info: AN946 APPLICATION NOTE VIPer100 THE MOST ADVANCED MONOLITHIC SOLUTION FOR OFF-LINE PRIMARY CONVERTERS by A. Russo, A. Bailly, A. Vitanza, R. Musarra VIPer100/100A and VIPer50/50A combines on the same silicon chip a state-of-the-art PWM circuit Following the ever increasing consumer market

L6569A

Abstract: 35 khz ballast 18w 12v cfl ballast bridge RECTIFIER GI L6569 delux MOSFET IRF 380
Contextual Info: L6569 L6569A SGS-THOMSON IMradlLllOTMDIgi HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR PRELIMINARY DATA • TECHNOLOGY: BCD "OFF-LINE” ■ FLOATING SUPPLY VOLTAGE UP TO 600V ■ GND REFERRED SUPPLY VOLTAGE UP TO 18V ■ DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA

tda vertical IC tv crt

Abstract: colour tv sound system ic TV horizontal Deflection Systems LCD TV column driver IC Large Panels datasheet TRIAC MAC 218 UHF preamplifier for BF998 vertical deflection oscillator in television TDA audio power amplifier audio video uhf tv transmitter tda audio amplifier
Contextual Info: Philips Semiconductors Semiconductors for Television and Video Systems Index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet. PAGE

SGS40TA045

Contextual Info: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING

Diode SMD ED 7ca

Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Contextual Info: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

sc-0352

Abstract: pin diagram of ic 1496 LC 0809 ESM6045AF ESM6045AV NPN DARLINGTON POWER module isotop si272
Contextual Info: 30E G l J> m SCS-THOM SON HJCTlMOes QÜ3aMbfl T ESM6045AF ESM6045AV S 6 S-THOMSÔN NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE • VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS ■ EASY TO MOUNT

NH245

Abstract: GQ304 TRANSISTOR L 287 A
Contextual Info: 3DE D • S G S -T H O M S O N G W IIS IIL I^ IM D O S 7^2^237 DD3DMSÜ T ES M 7 5 4 5 DF ES M 7 5 4 5 DV S G S - THOMSON NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

STF6045DV

Abstract: BD405 transistor b 1185 BD 149 transistor
Contextual Info: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

BUT23

Abstract: pin diagram of ic 1496
Contextual Info: 3D E D • 7^2^37 QG3G3TQ 1 SCS-THOMSOW s 6 S THQMS0N BUT232F I t i « ! "T-SVI5 BUT232V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS « ISOLATED CASE 2500V RMS

TSG25N100DV

Abstract: TSG25N100DF ISG25 3641b
Contextual Info: 30E D S G S -T H O M [* [F 3 m m 7 cj a c}237 QQ3QS24 M • S O N T IS G 2 5 N 1 0 0 D F [IO T 2 [* S T S G 2 5 N 1 O O D V ISOLATED GATE BIPOLAR TRANSISTOR (IGBT) _ ISOTOP POWER MODULE S G S-THOMSON ■ ■ . . . VOLTAGE-CONTROLLED GATE LOW ON-VOLTAGE DROP VcE(sat)

STF8045DV

Abstract: STF8045DF
Contextual Info: 3DE D • T'iS'iea? GG3DS1Ô 1 SCS-THOMSON ^ ^ 2.5 IILIim «! STF8045DF STF8045DV S G S-THOMSON NPN DARLINGTON POWER MODULE . . . . ■ . ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Contextual Info: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

NPN DARLINGTON POWER MODULE

Abstract: SGS50DB040D 9120 mosfet SGS50D
Contextual Info: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE

FR 9120

Abstract: ESM3030DV
Contextual Info: 3QE e ? D • 7^5^537 QG3Q432 T ■ ESM3030DF ESM3030DV SGS-THOMSON itLHOTO «! S G S-THOMSON ' NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE