MOSFET 606 Search Results

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

IRF7820

Abstract: N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6
Contextual Info: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage

DS302

Abstract: IRFY140 SHD2262 SHD226402
Contextual Info: SENSITRON SEMICONDUCTOR SHD226402 TECHNICAL DATA DATA SHEET 606, REV. A Formerly DS302, SHD2262 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.092 Ohm, 18A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY140 Series

shd2262

Abstract: shd226402
Contextual Info: SENSITRON SEMICONDUCTOR SHD226402 TECHNICAL DATA DATA SHEET 606, REV. A Formerly DS302, SHD2262 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.092 Ohm, 18A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY140 Series

SS10015M

Abstract: VEC2820
Contextual Info: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one

Contextual Info: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 200V 78m @VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 10V VGS

CBVK741B019

Abstract: F63TNR FDD2512 FDD6680 marking 300 to252
Contextual Info: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature

marking 606

Abstract: diode marking EY
Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.

A2635

Abstract: V2500
Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.

Mosfet FDD

Contextual Info: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature

FDD2512

Contextual Info: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature

FDC606P

Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.

DIODE A6 datasheet

Abstract: DIODE A6
Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.

Contextual Info: Ordering number:EN4889 FX606 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

MOSFET 400V TO-220

Abstract: IRF820 IRL820S IRL820T
Contextual Info: Bay Linear Linear Excellence IRF820 POWER MOSFET Advance Information Description Features • • • • • The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.

ON semiconductor 340g

Abstract: sot-223 body marking D K Q F
Contextual Info: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223

marking 606

Contextual Info: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed

Contextual Info: Series 1-DCL 7-40Amp • 0-500 Vdc - DC OUTPUT • MOSFET Output • Low On-State Resistance • Paralleling Capability for Higher Currents • Panel Mount • Optically Coupled DC output relays feature MOSFET technology for low on-state resistance, assuring easy paralleling and switching

mosfet W03

Abstract: FDS6690A
Contextual Info: F/MRCHII-D S E M IC O N D U C T O R April 1999 t FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been

evld02

Abstract: IXDD415 DEIC420 SOP-28 thermal DEIC420 RF MOSFET Gate Driver IC IXLD02 SOP28 Package DE-275 EVDD415 SOP28 socket
Contextual Info: DE-Series MOSFET, DEIC420 And SOP-28 IC Device Installation & Mounting Instructions The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to

Contextual Info: LF PA K 56D BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0155 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • Package with Low Thermal Resistance

Contextual Info: SQD97N06-6m3L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0069 ID (A) • Package with Low Thermal Resistance

Contextual Info: SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0155 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • Package with Low Thermal Resistance