MOSFET 600V 1A Search Results

Mosfet

Abstract: SSF2N60F mosfet 600V 100A
Contextual Info: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF2N60D1
Contextual Info: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and

L2N600

Contextual Info: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter

Contextual Info: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N60 Electrical Characteristics Parameter

Contextual Info: KSMD1N60C / KSMU1N60C 600V N-Channel MOSFET TO-251 TO-252 Features • • • • • • 1A, 600V, RDS on = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

p2n60

Abstract: f2n60 pjp2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS
Contextual Info: PJP2N60 / PJF2N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS ON =4.6Ω@VGS=10V, ID=1A TO-220AB ITO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current

M81721

Abstract: M81721FP DGA2
Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 1 NC FEATURES ¡Floating supply voltage up to 600V

M81721

Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 1 NC FEATURES ¡Floating supply voltage up to 600V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

fqt1n60

Abstract: FQT1N60C 1A 300V mosfet
Contextual Info: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

N-Channel mosfet 600v 1a

Abstract: BLV1N60 1A 300V mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

1A 300V mosfet

Abstract: BLV1N60 N-Channel mosfet 600v 1a
Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Mosfet

Abstract: SSF2N60
Contextual Info: SSF2N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

Contextual Info: SDU/D01N60A Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 600V Low Crss typical 2pF . R DS(ON) (m Ω) Max ID 1.1A Fast Switching. 100% Avalanche Rated. 9.3 @ VGS=10V,ID=0.55A G G D

power mosfet 600v

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

utc 2n60l

Abstract: UTC2N60L mosfet D 472
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged