MOSFET 4600 Search Results

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

IRFM054

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

25N80C

Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions

Contextual Info: PRELIMINARY Fuji Power MOSFET Target Specification 2SK3523-01R 1.Scope This specifies Fuji Power MOSFET 2SK3523-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-3PF 5.Absolute Maximum Ratings at Tc=25°° C unless otherwise specified

Contextual Info: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance

AAT4282A

Abstract: AAT4282A-1 AAT4282A-2 AAT4282AIPS-3-T1
Contextual Info: AAT4282A Dual Slew Rate Controlled Load Switch General Description Features The AAT4282A SmartSwitch is a member of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. The AAT4282A is a dual P-channel MOSFET power switch designed

IRFM054

Abstract: SHD218501 SHD218501A SHD218501B
Contextual Info: SHD218501 SHD218501A SHD218501B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 303, REV. B Formerly Part Number SHD2181/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.027 Ohm, 45A MOSFET • Isolated Hermetic Metal Package • Fast Switching

Contextual Info: AON6290 100V N-Channel MOSFET General Description Product Summary The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

AN1001

Abstract: IRF1010 IRFB61N15D
Contextual Info: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFB61N15D

Abstract: AN1001 IRF1010
Contextual Info: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

MOSFET 1 KW

Contextual Info: SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

POWER MOSFET 4600

Contextual Info: SENSITRON SEMICONDUCTOR SHD208603 TECHNICAL DATA DATA SHEET 278, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.050 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

DIODE s3l

Abstract: POWER MOSFET 4600 DIODE FAST S2L diode S3L 49 diode S3L 13 diode S3L 54 DIODE s2l 54 s3l 02 diode diode S3L 39 MOSFET 4600
Contextual Info: Preliminary Data Sheet ú0560 N-Channel Power MOSFET Array Description Features The ú0560 contains six N-channel power MOS FET with VDSS = 500 V in half-bridge configuration. These enhancement-mode Power MOSFET array utilizes a DMOS structure and alpha’s dielectric

Contextual Info: SENSITRON SEMICONDUCTOR SHD208603 TECHNICAL DATA DATA SHEET 278, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.050 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

4600 dual mosfet

Abstract: FCH47N60NF
Contextual Info: SupreMOS FCH47N60NF TM tm N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

IRFM054

Abstract: SHD2181 SHD2181A SHD2181B
Contextual Info: SENSITRON SEMICONDUCTOR SHD2181 SHD2181A SHD2181B TECHNICAL DATA DATA SHEET 303, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.027 Ohm, 45A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM054 Series

AAT4252A

Abstract: AAT4252A-3 AAT4252AITP-3-T1
Contextual Info: AAT4252A Dual Slew Rate Controlled Load Switch General Description Features The AAT4252A SmartSwitch is a dual P-channel MOSFET power switch designed for high-side loadswitching applications. Each MOSFET has a typical RDS ON of 105mΩ, allowing increased load switch

shd2181

Contextual Info: SENSITRON SEMICONDUCTOR SHD2181 SHD2181A SHD2181B TECHNICAL DATA DATA SHEET 303, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.027 Ohm, 45A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM054 Series

AAT4250

Abstract: AAT4280 AAT4285 GRM21BR71C105KA01 SC70JW-8
Contextual Info: AAT4285 12V Slew Rate Controlled Load Switch General Description Features The AAT4285 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The MOSFET operates from a 3.0V to 13.2V input range making it ideal for applications in

AN1001

Contextual Info: PD- 95621 SMPS MOSFET IRFB61N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including