MOSFET 45A 200V Search Results

50NF25

Abstract: mosfet 45a 200v JESD97 STB50NF25 STP50NF25
Contextual Info: STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 Low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID Pw STP50NF25 250V <0.069Ω 45A 160W STB50NF25 250V <0.069Ω 45A 160W • 100% avalanche tested ■

IRHMS63260

Abstract: IRHMS64260 IRHMS67260 IRHMS68260
Contextual Info: PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 300K Rads (Si) 0.029Ω 45A* IRHMS64260

IRHMS63260

Abstract: IRHMS64260 IRHMS67260 IRHMS68260 10v regulator 7910 10v regulator 7910 c
Contextual Info: PD - 94667 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 300K Rads (Si) 0.029Ω 45A* IRHMS64260

IRHMS63260

Abstract: IRHMS64260 IRHMS67260 IRHMS68260
Contextual Info: PD - 94667B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 300K Rads (Si) 0.029Ω 45A* IRHMS64260

IRHMS67260

Abstract: 2n7584 2N7584T1
Contextual Info: PD-94667F RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) Low-Ohmic

2N7584T1

Abstract: 2n7584 PD-94667D IRHMS67260
Contextual Info: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

rcj450

Contextual Info: RCJ450N20 Nch 200V 45A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 55mW ID 45A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

2n7584

Contextual Info: PD-94667E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

Contextual Info: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

PD-94667C

Abstract: IRHMS67260 IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A
Contextual Info: PD-94667C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

2N7586

Contextual Info: PD-96991B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si) RDS(on) 0.041Ω ID 45A* IRHMS63264 0.041Ω 45A* 300K Rads (Si) Low-Ohmic

Contextual Info: RCX450N20 Nch 200V 45A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 55mW ID 45A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy.

2N7586

Abstract: 2N7586T1 IRHMS67264 Technology International
Contextual Info: PD-96991A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si) RDS(on) 0.041Ω ID 45A* IRHMS63264 0.041Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

Contextual Info: PD-96991A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si) RDS(on) 0.041Ω ID 45A* IRHMS63264 0.041Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

IRHMB57260SE

Contextual Info: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides

Contextual Info: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides

IRHMK57260SE

Contextual Info: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides

IRHNA57264SE

Abstract: JANSR2N7474U2
Contextual Info: PD-93816E IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06Ω ID 45A QPL Part Number

Contextual Info: PD-93816E IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06Ω ID 45A QPL Part Number

Contextual Info: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides

IRHNA57264SE

Abstract: JANSR2N7474U2
Contextual Info: PD-93816D IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06Ω ID QPL Part Number 45A JANSR2N7474U2

MIC4452

Abstract: APT45M100J
Contextual Info: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure