MOSFET 30A 300V Search Results

STP30NM30N

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

P30NM30N

Abstract: STP30NM30N JESD97
Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

W30NM60

Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

STW30NM60D

Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE FS30SM-6 • V d s s . 300V • ros ON (MAX) .0 .1 7 Q • I D . 30A

Contextual Info: R6030ENX Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

STW30NM60D

Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6030ENX Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.

Contextual Info: R6030ENZ1 Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6030ENZ Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

J 6920 FET

Abstract: igbt 50V 420A IRFPS30N60K
Contextual Info: PD- 94417 IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

mJ 6920

Abstract: mosfet 600V 30A IRFPS30N60K IRFPS37N50A
Contextual Info: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

mosfet 600V 30A

Abstract: IRFPS37N50A power mosfet 600v mJ 6920 247t
Contextual Info: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple

Contextual Info: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple

12v 30a smps

Abstract: mJ 6920 IRFPS37N50A avalanche diode 30A
Contextual Info: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple

Contextual Info: Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 = 600V = 30A ≤ 240mΩ Ω RDS on N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: MITSUBISHI MOSFET MODULES FM30E2Y-9,-10 DC CH O PPER U SE INSULATED T Y P E FM30E2Y-9, -10 • I d . 30A •Vpss . 450/500V • 1-Element in a package • Insulated Type • U L Recognized

IXTT30N60L2

Abstract: 30n60l 30N60L2 IXTH30N60L2 IXTQ30N60L2
Contextual Info: Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 = 600V = 30A ≤ 240mΩ Ω RDS on N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C

APT30M60J

Abstract: MIC4452 544MH
Contextual Info: APT30M60J 600V, 30A, 0.16Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

sml30m19jvr

Contextual Info: Illl Vrr r = mi SEM E SML30M19JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 300V ^30A 0.019Q Faster Switching