MOSFET 300V 10A TYPE Search Results

2SK1810

Abstract: 2sk18
Contextual Info: LVXS'U—X yt*7—MOSFET LVX SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK1810 F10V30 300V 10a • Æ fê S ï R A T IN G S A bsolute M axim u m R atings m Item s is S torag e Tem perature ■f-v Channel Tem perature • v —x £ Drain • Source V o lta ge

FM15TF-9

Abstract: JRC 062 gun diode bias symbol JRC FF 30
Contextual Info: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A

2SK3502-01

Contextual Info: DATE CHECKED Apr.-02-'01 Device Name : Type Name : Spec. No. : Date : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

Contextual Info: ! FM20TF-1 OS I MITSUBISHI MOSFET MODULE ! MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTLINE DRAWING FM 20TF10S 90 6 1 1 6 1 1 6 13 . j> 5 . 5 16 I . * ~ T f' G j PS u PG v PS v PG w PS w P; r iÿ r tU lr ifjlr r ? & co i in ,—i CVI -GulM SuN GvNSi/NG wN SyvN 64

mitsubishi MOSFET

Abstract: FM30TF-10S fm30tf "MOSFET Module" full bridge inverter
Contextual Info: MITSUBISHI MOSFET MODULE FM30TF-1 OS MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING Dim ensions in mm F M 3 0 T F -10 S _ 7.5 _ 2 '. 7.5 19! . ! I 1 I 28.5 I 21 _ 7.5 16. 5 , I 28.5 11 I M 2 - ip 5.5 21.5 11 / '5 3 :3 1 1 c o l § i- _ l T L+ 98

Contextual Info: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

mosfet 300V 10A

Abstract: 300v 10 amp n-channel mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

mosfet 300v 10a

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

mos fet 120v 10A

Contextual Info: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

SMK1060

Contextual Info: SMK1060D2 Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code

SMK1060

Contextual Info: SMK1060P Semiconductor Advanced N-Ch Power MOSFET Features PIN Connection • High Voltage: BVDSS=600V Min. • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k in g

Contextual Info: SMK1060FJ Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code

SMK1060F

Abstract: SMK1060
Contextual Info: SMK1060F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75Ω(Max.) Ordering Information Type NO.

SMK1060

Contextual Info: SMK1060F Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code

IXTM20N60

Abstract: SHD239607 mosfet 300V 10A type
Contextual Info: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

mosfet 20a 300v

Abstract: S689
Contextual Info: POWEREX m M 3=IE D INC E R E • TSTMbEl ODOMSSM 7 BI PRX JEF24502S JEF25002S X Powerex, Inc., Hillls Street, \bungwood, Pennsylvania 1569/7 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Mos FETMOD

R6020ANZ

Abstract: R6020
Contextual Info: R6020ANZ Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

Amp. mosfet 1000 watt

Abstract: SHD225608
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6020FNX Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: R6010ANX Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.