MOSFET 150 N IRF Search Results
MOSFET 150 N IRF Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET 150 N IRF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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irf 1740
Abstract: EIA-541 P Channel Power MOSFET IRF
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6128A IRF7478QPbF irf 1740 EIA-541 P Channel Power MOSFET IRF | |
IRF P CHANNEL MOSFET
Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
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IRF7343QPBF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet | |
IRF P CHANNEL MOSFET
Abstract: MOSFET 150 N IRF N-P Channel mosfet
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IRF7307QPbF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF N-P Channel mosfet | |
irf 536
Abstract: IRF p 536 MOSFET transistor irf 649
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IRF7105QPbF EIA-481 EIA-541. irf 536 IRF p 536 MOSFET transistor irf 649 | |
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Contextual Info: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET |
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IRF7379QPbF EIA-481 EIA-541. | |
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Contextual Info: PD - 96115 IRF9952QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET |
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IRF9952QPbF EIA-481 EIA-541. | |
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Contextual Info: PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 |
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96102B IRF7105QPbF JESD47Fâ J-STD-020Dâ | |
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Contextual Info: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching |
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6128A IRF7478QPbF | |
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Contextual Info: PD - 96102A IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 |
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6102A IRF7105QPbF EIA-481 EIA-541. | |
IRF7343QPBFContextual Info: PD - 96110A IRF7343QPBF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 |
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6110A IRF7343QPBF aval61 EIA-481 EIA-541. IRF7343QPBF | |
F7101
Abstract: IRF7101
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6106A IRF7307QPbF ava61 EIA-481 EIA-541. F7101 IRF7101 | |
F7101
Abstract: IRF7101
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6102A IRF7105QPbF EIA-481 EIA-541. F7101 IRF7101 | |
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Contextual Info: PD - 96110A IRF7343QPBF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 |
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6110A IRF7343QPBF EIA-481 EIA-541. | |
EIA-541Contextual Info: PD - 96115A IRF9952QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 |
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6115A IRF9952QPbF avalan61 EIA-481 EIA-541. EIA-541 | |
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Contextual Info: PD - 96113 IRF7452QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description |
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IRF7452QPbF EIA-541. | |
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Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features n n n n n n n Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S |
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IRF4905SPbF IRF4905LPbF IRF4905S O-262 AN-994. | |
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Contextual Info: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8 |
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6113A IRF7452QPbF EIA-481 EIA-541. | |
EIA-541
Abstract: F7101 IRF7101
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6113A IRF7452QPbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 | |
PN channel MOSFET 10AContextual Info: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2 |
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IRF7313QPbF EIA-481 EIA-541. PN channel MOSFET 10A | |
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Contextual Info: PD - 96132 IRF7380QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free VDSS RDS on max 73m:@VGS = 10V |
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IRF7380QPbF | |
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Contextual Info: PD - 96103 IRF7303QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2 |
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IRF7303QPbF EIA-481 EIA-541. | |
HEXFET SO-8
Abstract: PN channel MOSFET 10A
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6132A IRF7380QPbF HEXFET SO-8 PN channel MOSFET 10A | |
IRFP450 Power MosfetContextual Info: Standard Power MOSFET IRFP450 VDSS = 500 V ^D co nt — 14 A ^ D S (o n ) = 0 -4 0 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS T j = 25°C to 150°C 500 V Voc« V«, T j = 25°C to 150°C; Ros = 1 M£2 500 V C ontinuous ±20 |
OCR Scan |
IRFP450 O-247 C2-35 IRFP450 Power Mosfet | |
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Contextual Info: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V |
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96128B IRF7478QPbF | |