MOSFET 10A 800V FS Search Results

STU10NB80

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

FS10SM16A

Abstract: MOSFET 800V 10A FS10SM-16A mosfet 10a 800v
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

15A POWER TRANSISTOR FOR SMPS

Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
Contextual Info: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch

TRIACS EQUIVALENT LIST

Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
Contextual Info: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a

mosfet 10a 800v

Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
Contextual Info: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

FS10SM16A

Abstract: FS10SM-16A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A •800V ■0.98Q 10A • V d s s . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

FS10SM16A

Abstract: FS10SM-16A fs10sm16 MOSFET 800V 10A TO-3P
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w r q w e r V d s s . 800V

MOSFET 800V 10A TO-3P

Abstract: FS5SM-16A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS5SM-16A HIGH-SPEED SWITCHING USE FS5SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

FS5VS-16A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

FS5UM-16A

Abstract: FS5UM MOSFET 800V 10A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

mosfet 10a 800v

Abstract: FS5KM-16A FS5KM16A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS5KM-16A HIGH-SPEED SWITCHING USE FS5KM-16A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 800V

1AV Series

Contextual Info: FU JI 2SK2762-01L,S t ìiu M s ir t ó u t ì FAP-IIS Series > Features - N-channel MOS-FET 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

ntc 10D-11

Abstract: 7m0880 flyback 200w bobbin EER-3542 flyback 150w FS7M0880 pin diagram for 7m0880 bobbin EER3542 bobbin EER 4042 EER 4042
Contextual Info: www.fairchildsemi.com FS7M0680, FS7M0880 Fairchild Power Switch FPSTM Features • • • • • • • • Pulse by Pulse Current Limit Over load protection (OLP) - Latch Over voltage protection (OVP) - Latch Internal Thermal Shutdown (TSD) - Latch Under Voltage Lock Out (UVLO) with hysteresis

mosfet 10a 800v

Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

24v 2a smps

Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
Contextual Info: C O M M U N I C A T I O N S P O W E R Taking Charge Batteries, Chargers and Chemistry Evolution in Communications by Tara Lynn Macdonald W HILE THERE ARE MANY alternative rechargeable systems, lead-acid batteries are still the primary choice. Compared with alternative solutions,

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

13.56mhz c class amp

Abstract: ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C ARF1519 750w planar transistor
Contextual Info: ARF1519 D ARF1519 BeO 104T-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.

SMPS 666

Abstract: FPS138 EER2834 YE EI- 33C DF 085 33H Bridge EER2834 2 GBU606 EER28 rsn 33m 3un6
Contextual Info: ✂✁ ✌ ✍ FPS ✎✑✏✑✒✔✓ ✕✗✖ FPS ✄✂☎✂✆✂✝✂✞✂✟ ✘ AC-DC ✠ AC-DC ✡☞☛ ✙✛✚ Hang-Seok Choi FPS +82-32-680-1383 +82-32-680-1317 hschoi@fairchildsemi.co.kr [ ] FPS Fairchild AC-DC SMPS SMPS FPS FPS design assistant

POWER MOSFET Rise Time 1000V NS

Abstract: MBG40H-3 fast recovery diode 1000v 10A opto fet MOSFET 800V 10A 100U
Contextual Info: J37/A M icropac Microcircuits Division MBG40H-3 Micropac Power MOSFET • • • • • • • Each FET VDSS = 1000V Half Bridge Driver Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Hermetically Sealed

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

MA2810

Abstract: MA1050 ma4810 MA2830 MA4820 MA2820 MA1040 2SK2060 MJ2400 S20LC20U
Contextual Info: A VARIETY OF SEMICONDUCTORS WHICH RESPOND TO NEEDS OF LIGHTER MK Series AUTOMATIC VOLTAGE SELECTOR: The MK series meets the needs of full range power supplies. DIODES FOR PRIMARY RECTIFICATION: A family of high quality products with a wide range of features, that meet the needs of changing applications.