MOSFET 1052 Search Results

jfet cascode

Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
Contextual Info: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the

2N6770

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability

MOSFET 1052

Abstract: FAN53168 FAN53418 FAN53418M FDD6696
Contextual Info: www.fairchildsemi.com FAN53418 Synchronous DC-DC MOSFET Driver Features General Description • Drives N-channel High-Side and Low-Side MOSFETs in a synchronous buck configuration • Internal Adaptive “Shoot-Through” Protection • High Switching Frequency > 500kHz

Contextual Info: PRELIMINARY PD-97174A 2N7622U2 IRHLNA797064 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) RDS(on) 0.015Ω ID -56A* IRHLNA793064 0.015Ω

Contextual Info: PRELIMINARY PD-97174A 2N7622U2 IRHLNA797064 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) RDS(on) 0.015Ω ID -56A* IRHLNA793064 0.015Ω

mosfet 600V 100A ST

Contextual Info: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 iaA Max. @ VDS= 600V

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET RFM04U6P Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V, 6.0V, 7.2V 7.2V Vgs = 0.5V ~ 1.7V 0.05V Vgs = 0.5V ∼ 1.7V ( 0.05V Step

2N7622U2

Abstract: IRHLNA793064 IRHLNA797064
Contextual Info: PD-97174A 2N7622U2 IRHLNA797064 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) RDS(on) 0.015Ω ID -56A* IRHLNA793064 0.015Ω -56A* 300K Rads (Si)

MOSFET 1052

Contextual Info: SSFP16N25 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 250V Simple Drive Requirement ID25 = 16A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

Contextual Info: International h?r Rectifier IRFPC40 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • PD-9.511B 4Û55452 DOlSSbfi 0=13 • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Nippon capacitors

Abstract: nippon chemi-con 10000 uf 16v
Contextual Info: LTC3703 100V Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Step-Up or Step-Down DC/DC Converter Dual N-Channel MOSFET Synchronous Drive Excellent Line and Load Transient Response

Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V TYP • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified

FS50VS-3

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE j FS50VS-3 OUTLINE DRAWING Dimensions in mm - 4-5 1 j 1.3 0.5 C i X Q -Ï Q C?; A ’ ö +i c\i T" ?) (3) •4) • 10V DRIVE • VDSS .150V

marking ic 8pin C66

Contextual Info: TPS28225 TPS28226 Product Preview www.ti.com SLUS710A – MAY 2006 – REVISED JANUARY 2007 High-Frequency 4-A Sink Synchronous MOSFET Drivers FEATURES • • • • • • • • • • • • • • • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time

APM2016N

Abstract: apm*2016n APM2016NU marking 1052 MOSFET 1052 A102
Contextual Info: APM2016NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/40A, RDS ON =12mΩ (typ.) @ VGS=4.5V G RDS(ON)=20mΩ (typ.) @ VGS=2.5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

Contextual Info: LTC3703 100V Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n High Voltage Operation: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Step-Up or Step-Down DC/DC Converter Dual N-Channel MOSFET Synchronous Drive

BSM 225

Abstract: siemens bsm 181 BSM181
Contextual Info: SIEMENS SIMOPAC MOSFET Modules BSM 181 F C BSM 181 FR VDS = 800 V /D = 34 A ^DS(on) = 0.32 Q • • • • • • • Power m odule Single switch FREDFET N channel E nhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig. 1 a ’ )

N mosfet 100v 500A

Contextual Info: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.

Contextual Info: SÌ1032R/X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET TrenchFE T PRODUCT SUMMARY V d s (V ) -2 0 M O SFETs 1 .5 -V R a te d Id ( n iA ) r D S (on) ( Q ) 5 @ V Gs = 4.5 V 200 7 @ VGs = 2.5 V 175 9 @ V QS = 1.8 V 150 10 d V qs = 1.5 V 50 ESD Protected

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP

Contextual Info: Application Note 1052 Design Guidance for AP3106 Prepared by Qikun Wu System Engineering Dept. minimum PWM frequency is set at about 26kHz. 1. Introduction The AP3106 is a high voltage start-up, current mode PWM controller with green-mode power-saving operation.

Contextual Info: DATASHEET LEO FAMILY LEO‑M™ : Advanced Linear Array Loudspeaker 41.42 41.42 [1052 mm] [1052 41.42 41.42mm] [1052 mm] [1052 mm] Dimensions 44.42” w x 17.85” h x 23.00” d 1128 mm x 453 mm x 584 mm Weight 265 lbs (120.2 kg) Enclosure Multi-ply hardwood

LTC3703H

Abstract: LTC3703-5 BAT85 Spice f10d LT1076HV power adapter 12v/5a pin LTC3703 MBR1100 Si7456DP BAS19
Contextual Info: LTC3703 100V Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n The LTC 3703 is a synchronous step-down switching regulator controller that can directly step down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3703 drives external N-channel

30V 20A 10KHz power MOSFET

Abstract: P channel MOSFET 10A schematic REG IC 48V IN 12V 10A OUT lt1339 application note MOSFET FOR 100khz SWITCHING APPLICATIONS schematic diagram 48v -200Vdc buck boost converter dual high side MOSFET driver with charge pump f12 mosfet IRFZ44 operation data buck converter vin 40v vout 20v 50khz
Contextual Info: LTC3703 100V Synchronous Switching Regulator Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Voltage Operation: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Step-Up or Step-Down DC/DC Converter