MOSFET 100A ST Search Results

p100NF

Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V

Contextual Info: D06D Series • MOSFET output • Ratings from 60A to 100A @ 60 VDC • DC control • Relays are easily paralleled for higher-current applications PRODUCT SELECTION Control Voltage 3.5-32 VDC 60A 80A 100A D06D60 D06D80 D06D100 OUTPUT SPECIFICATIONS 1 Description

Contextual Info: D06D Series • MOSFET output • Ratings from 60A to 100A @ 60 VDC • DC control • Relays are easily paralleled for higher-current applications PRODUCT SELECTION Control Voltage 3.5-32 VDC 60A 80A 100A D06D60 D06D80 D06D100 OUTPUT SPECIFICATIONS 1 Description

D1D100

Abstract: 0-100VDC
Contextual Info: Series 1-DC • MOSFET output • Ratings from 60A to 100A @ 100 VDC • DC control • Relays are easily paralleled for higher-current applications PRODUCT SELECTION Control Voltage 3.5-32 VDC 60A 80A 100A D1D60 D1D80 D1D100 OUTPUT SPECIFICATIONS 1 Description

D1D100

Contextual Info: Series 1-DC • MOSFET output • Ratings from 60A to 100A @ 100 VDC • DC control • Relays are easily paralleled for higher-current applications PRODUCT SELECTION Control Voltage 3.5-32 VDC 60A 80A 100A D1D60 D1D80 D1D100 OUTPUT SPECIFICATIONS 1 Description

Contextual Info: D06D Series • MOSFET output • Ratings from 60A to 100A @ 60 VDC • DC control • Relays are easily paralleled for higher-current applications PRODUCT SELECTION Control Voltage 3.5-32 VDC 60A 80A 100A D06D60 D06D80 D06D100 OUTPUT SPECIFICATIONS 1 Description

"MOSFET Module"

Abstract: E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

E80276

Abstract: FM200TU-3A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated

"MOSFET Module"

Abstract: E80276 FM200TU-07A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated

ISD100A

Abstract: ISD100
Contextual Info: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A ) s ( t c u d o ) r s ( P t c e t u e d l Description o schematicrodiagram s Internal P b e O t e l )

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 100N02 Preliminary Power MOSFET 100A, 15V N-CHANNEL POWER TRENCH MOSFET „ DESCRIPTION The UTC 100N02 is an N-channel it uses UTC’s advanced technology to minimum on-state resistance, low switching speed. The UTC 100N02 is generally

fdb075n15a

Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has

MOSFET 50V 100A TO-220

Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been

ISD 100

Abstract: FDP075N15A
Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

Contextual Info: FDP3205 N-Channel PowerTrench MOSFET 55V, 100A, 7.5mΩ Features Description • RDS on = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored

JESD22-A113F

Abstract: Fdb020n08 N_CHANNEL MOSFET 100V MOSFET
Contextual Info: FDB024N08BL7 N-Channel PowerTrench MOSFET 80V, 229A, 2.4mΩ Features Description • RDS on = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

MOTOR DRIVER 48v 50A

Abstract: ISD 1720
Contextual Info: FDMS030N06B N-Channel PowerTrench MOSFET 60V, 100A, 3m Features Description • RDS on = 2.4m (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDP027N08

Abstract: FDP027N08B 200A battery charger
Contextual Info: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80V, 223A, 2.7mΩ Features Description • RDS on = 2.21mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

ut100n03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load

STB100NF04L

Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of

3240A

Abstract: STB100NF04L
Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of

3240A

Abstract: STP100NF04L
Contextual Info: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of