MOSFET 100A 200V Search Results

Y100NS20FD

Abstract: ISD100A STY100NS20FD mosfet 100A ST ISD 100a JESD97
Contextual Info: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating

st 50a

Abstract: JESD97 STY100NS20FD uc-225
Contextual Info: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating

ISD100A

Abstract: ISD100
Contextual Info: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A ) s ( t c u d o ) r s ( P t c e t u e d l Description o schematicrodiagram s Internal P b e O t e l )

IXTN110N20L2

Abstract: NC182
Contextual Info: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA IXTN110N20L2 VDSS ID25 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN110N20L2 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

PA30U

Abstract: SCHEMATIC 8000w Power Amplifier PA30 S1000 VB-12 1000W mosfet 2000w power amplifier e180 cc APEX A75
Contextual Info: FEATURES • OUTPUT POWER 2000W CONT, 8000W PULSE • NO SECOND BREAKDOWN, MOSFET OUTPUT • l0 = 50A CONTINUOUS, 100A PULSE • WIDE SUPPLY RANGE, 30V to 200V • 45 V/ns TYPICAL SLEW RATE • VERSATILE PROGRAMMABLE CURRENT LIMIT • THERMAL PROTECTION, OVERTEMP OUTPUT

Contextual Info: DEC 8 '992j FEATURES • • • • • • • OUTPUT POWER 2000W CONT, 8000W PULSE NO SECOND BREAKDOWN, MOSFET OUTPUT l0 = 50A CONTINUOUS, 100A PULSE WIDE SUPPLY RANGE, 30V to 200V 45 V/ns TYPICAL SLEW RATE VERSATILE PROGRAMMABLE CURRENT LIMIT THERMAL PROTECTION, OVERTEMP OUTPUT

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STY100NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

218F

Abstract: APT20M20B2LL APT20M20LLL
Contextual Info: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

A20M18LVR

Abstract: APT20M18B2VR
Contextual Info: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT20M16B2LL

Abstract: APT20M16LLL 050701
Contextual Info: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R B2LL MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

sml20m22lvr

Contextual Info: mi SML20M22LVR SEME LAB 5TH GENERATION MOSFET T O -2 6 4 A A P ackage O utline Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pin 1 - Gate Pin 2 - Drain Pin 3 - Source • • • • VDSS 200V ^D(cont) 100A ^DS(on) 0.022Q

STY100NS20FD

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET TYPE STY100NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING

STY100NS20FD

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET n n n n n n n TYPE VDSS RDS on ID STY100NS20FD 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING

CAS100H12

Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Contextual Info: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode

APT30M30B2LL

Abstract: APT30M30LLL
Contextual Info: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in