MOSFET 074 Search Results
MOSFET 074 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET 074 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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us 945 mosfetContextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies |
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MRF9030M/D MRF9030MR1 us 945 mosfet | |
MRF5S9070NRContextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with |
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MRF5S9070NR1/D MRF5S9070NR1 MRF5S9070NR | |
Contextual Info: PLA110 Single Pole OptoMOS Relays Load Voltage Load Current Max RON PLA110 400 150 22 Description PLA110 is a 1-Form-A solid state relay which uses optically coupled MOSFET technology to provide 3750V of input to output isolation. The efficient MOSFET switches |
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PLA110 PLA110 3750VRMS DS-PLA110-R4 | |
BS7002
Abstract: PLA110 PLA110S PLA110STR
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PLA110 PLA110 DS-PLA110-R5 BS7002 PLA110S PLA110STR | |
BS7002
Abstract: PLA134 PLA134S PLA134STR
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PLA134 PLA134 DS-PLA134-R2 BS7002 PLA134S PLA134STR | |
Contextual Info: SK150MBL055T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # # , 0. / , 0. -4 /5 6 9 6 5 , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4 |
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SK150MBL055T | |
AN1955
Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
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MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR | |
Contextual Info: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this |
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MRF5S9070NR1/D MRF5S9070NR1 | |
Contextual Info: MIC4414/15 - Ultra-Small 1.2mm x 1.2mm Four-Pin Low-Side MOSFET Drivers 1.5A, 4.5V to 18V Low-Side MOSFET Drivers Optimal Efficiency at Every Level Ideal for use in: Micrel, Inc. is a leading global manufac- • 3.5Ω output resistance at 18V and 9Ω output |
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MIC4414/15 MIC4414) MIC4415) MIC4414/5-102012 | |
Contextual Info: SK 150 MBL 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # # , 0. / , 0. -4 /5 6 9 6 5 , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4 |
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Contextual Info: MIC4414/15 - Ultra-Small 1.2mm x 1.2mm Four-Pin Low-Side MOSFET Drivers 1.5A, 4.5V to 18V Low-Side MOSFET Drivers Optimal Efficiency at Every Level Ideal for use in: Micrel, Inc. is a leading global manufac- • 3.5Ω output resistance at 18V and 9Ω output |
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MIC4414/15 000pF mo470, MIC4414/5-102012 | |
Mbl transistorContextual Info: SK 150 MBL 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # # , 0. / , 0. -4 /5 6 9 6 5 , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4 |
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Contextual Info: MIC5019 — Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump Designed to Switch an N-Channel Enhancement Type MOSFET in High- or Low-Side Applications • 2.7V to 9V supply voltage range • 16V gate drive at VDD = 9V • 9.2V gate drive at VDD = 3.3V |
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MIC5019 Soleno3-470, MIC5019-102012 | |
Contextual Info: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device |
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MRF9045M/D MRF9045M MRF9045MR1 | |
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Contextual Info: L ir m TECHNOLOGY LT1161 Q uad Protected High-Side MOSFET Driver F€OTUR€S D c s c n iP T io n • Fully Enhances N-Channel MOSFET Switches ■ 8V to 48V Power Supply Range ■ Protected from -15V to 60V Supply Transients ■ Individual Short-Circuit Protection |
OCR Scan |
LT1161 20-Lead LT1161 containi24V/3A 1N4744 MTP10N40E 50V/1A PS2501-4 | |
MRF9045MR1
Abstract: TO270
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MRF9045MR1/D MRF9045MR1 MRF9045MR1 TO270 | |
MRF9030MBR1
Abstract: MRF9030MR1 TO-270-2
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MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 TO-270-2 | |
A113
Abstract: MRF9045MBR1 MRF9045MR1
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MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1 | |
16TPB47M
Abstract: FDFS2P102A FDS6675 MLPQ-12 SC4508A SC4508AMLTRT Si4831DY TP10
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SC4508A SC4508A MLPQ-12, 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508AMLTRT Si4831DY TP10 | |
SC4508ABUCK-BOOSTEVB
Abstract: SC4508A 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508ABUCKEVB SC4508AMLTRT O12V
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SC4508A SC4508A MLPQ-12, SC4508ABUCK-BOOSTEVB 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508ABUCKEVB SC4508AMLTRT O12V | |
si4831
Abstract: FDFS2P102A equivalent 292N
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SC4508A si4831 FDFS2P102A equivalent 292N | |
16TPB47M
Abstract: FDFS2P102A FDS6675 MLPQ-12 SC4508A SC4508ABUCK-BOOSTEVB SC4508ABUCKEVB SC4508AMLTRT si4831
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SC4508A SC4508A 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508ABUCK-BOOSTEVB SC4508ABUCKEVB SC4508AMLTRT si4831 | |
Contextual Info: LTC1696 Overvoltage Protection Controller FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO ±2% Overvoltage Threshold Accuracy Low Profile 1mm ThinSOTTM Package Gate Drive for SCR Crowbar or External N-Channel Disconnect MOSFET Monitors Two Output Voltages |
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LTC1696 dis1735 LTC1922-1 LTC1960 36-Pin 1696f | |
dual 2N6507 charger
Abstract: SCR 12V battery charging SCR Crowbar scr 12v battery charger 2n6507 battery charger 2N6507 SCR 8808 SCR TRIGGER PULSE TRANSFORMER tp 8799 2N3904
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LTC1696 LTC1735 LTC1922-1 LTC1960 36-Pin 1696f dual 2N6507 charger SCR 12V battery charging SCR Crowbar scr 12v battery charger 2n6507 battery charger 2N6507 SCR 8808 SCR TRIGGER PULSE TRANSFORMER tp 8799 2N3904 |