MOSFET,P,D PACKAGE Search Results

Diode SMD ED 9a

Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp
Contextual Info: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET

Contextual Info: P D - 9 .1 2 6 4 C International IG R Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching Vqss = -30V ^ D S (o n) = 0.09Q

IRF7319

Abstract: 49AA
Contextual Info: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch

6x marking sot-23 p-channel

Abstract: IRLMS4502 IRLMS6702
Contextual Info: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

irlms4502

Contextual Info: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: Tem ic Si9434ADY Semiconductors Single P-Channel, 2.5-V G-S Rated MOSFET Product Sum m ary VDS(V) 20 rDS(on) (Q) 0.033 @ VGs = - 4.5 V 0.050 @ VGs = - 2.5 V I d (A) ± 6.9 ± 5.6 sss O O P SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25°C Unless Otherwise Noted)

SUM110P04-04L

Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −40 ID (A)d 0.0042 @ VGS = −10 V −110 0.0062 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS

SUM110P06-07L

Abstract: 40842 SUM110P06-07L-E3
Contextual Info: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.0069 @ VGS = −10 V −110 0.0088 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS

Contextual Info: SUM110P06-07L Vishay Siliconix New Product P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 60 ID (A)d 0.0069 @ VGS = - 10 V - 110 0.0088 @ VGS = - 4.5 V - 110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance

72437

Contextual Info: SUM110P04-04L Vishay Siliconix New Product P-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 40 ID (A)d 0.0042 @ VGS = - 10 V - 110 0.0062 @ VGS = - 4.5 V - 110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance

Contextual Info: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

marking code FFD

Abstract: IRF7604
Contextual Info: P D -9 .1 2 6 3 D International IQR Rectifier IRF7604 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss = -20V

A4410

Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −40 ID (A)d 0.0042 @ VGS = −10 V −110 0.0062 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS

272c

Abstract: SUM110P06-08L-E3 SUM110P06-08L
Contextual Info: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance

SUM110P06-08L

Contextual Info: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance

Contextual Info: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology

ir*526

Abstract: smd diode schottky code marking 2F
Contextual Info: P D - 9.1649 International IGR Rectifier IRF7526D1 PRELIMINARY FETKY • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint Description MOSFET and Schottky Diode

S 0240

Contextual Info: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Si7485DP

Abstract: Si7485DP-T1
Contextual Info: Si7485DP Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0073 @ VGS = - 4.5 V - 20 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.0090 @ VGS = - 2.5 V

40411 transistor

Abstract: 40411 transistor 40411 Si7461DP
Contextual Info: Si7461DP Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0145 @ VGS = −10 V −14.4 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.019 @ VGS = −4.5 V

Si7923DN

Contextual Info: Si7923DN New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.047 @ VGS = −10 V −6.4 0.075 @ VGS = −4.5 V −5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package

Si7941DP

Abstract: 50243
Contextual Info: Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.027 @ VGS = −10 V −9.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.039 @ VGS = −4.5 V −7.5

Si7705DN

Abstract: Si7705DN-T1
Contextual Info: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) - 20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKr Package with Low 1.07-mm Profile ID (A)