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    SI7941DP Search Results

    SI7941DP Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si7941DP
    Vishay Intertechnology Dual P-Channel 30-V (D-S) MOSFET Original PDF 38.53KB 4
    SI7941DP
    Vishay Siliconix MOSFETs Original PDF 64.3KB 4
    SI7941DP
    Vishay Telefunken Dual P-channel 30-v (d-s) Mosfet Original PDF 279.11KB 3
    SI7941DP-DS
    Vishay Telefunken DS-Spice Model for Si7941DP Original PDF 225.86KB 3
    Si7941DP SPICE Device Model
    Vishay Dual P-Channel 30-V (D-S) MOSFET Original PDF 225.85KB 3

    SI7941DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si7941DP

    Contextual Info: SPICE Device Model Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si7941dp18-jul-08 PDF

    Contextual Info: Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.027 @ VGS = −10 V −9.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.039 @ VGS = −4.5 V −7.5


    Original
    si7941dp07-mmsi7941dp-t1si7941dp-t1--e3+108-apr-05 PDF

    Si7941DP

    Contextual Info: SPICE Device Model Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si7941dp31-may-04 PDF

    Si7941DP

    Contextual Info: SPICE Device Model Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si7941dp0-to-10v02-jul-01 PDF

    IN 6650

    Abstract: AN609 Si7941DP
    Contextual Info: Si7941DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si7941dpan60908-aug-07in 6650 PDF

    Si7941DP

    Abstract: 50243
    Contextual Info: Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.027 @ VGS = −10 V −9.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.039 @ VGS = −4.5 V −7.5


    Original
    si7941dp07-mmsi7941dp-t1si7941dp-t1--e3+3s-50243--rev21-feb-0550243 PDF

    S-50243

    Abstract: Si7941DP
    Contextual Info: Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.027 @ VGS = −10 V −9.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.039 @ VGS = −4.5 V −7.5


    Original
    si7941dp07-mmsi7941dp-t1si7941dp-t1--e3+218-jul-08s-50243 PDF

    71630

    Abstract: Si7941DP
    Contextual Info: Si7941DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.027 @ VGS = –10 V –9.0 0.039 @ VGS = –4.5 V –7.5 –30 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original
    si7941dp07-mms-03967--rev04-jun-01+171630 PDF

    Si7941DP

    Contextual Info: SPICE Device Model Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si7941dps-71530rev30-jul-07 PDF

    m1 diode

    Contextual Info: LTC2952 Pushbutton PowerPath Controller with Supervisor FEATURES n n n n n n n n n n n DESCRIPTION Pushbutton On/Off Control Automatic Low Loss Switchover Between DC Sources Wide Operating Voltage Range: 2.7V to 28V Low 25µA Shutdown Current Guaranteed Threshold Accuracy: ±1.5% of


    Original
    ltc2952200ms20-pinot-23+5ltc2908ltc2950/lttc2951ltc4411m1 diode PDF

    ic 2952 pin out diagram

    Abstract: LTC2952 8 pin SI7913DN LT1767-2 LTC2952IF LTC2952IUF SOT-23 MOSFET P-CHANNEL a1 1- mark 2952 2952 4 4 LTC2952
    Contextual Info: LTC2952 Push Button PowerPathTM Controller with Supervisor FEATURES DESCRIPTION • The LTC 2952 is a power management device that features three main functions: push-button on/off control of system power, ideal diode power paths and system monitoring. The LTC2952’s push-button input, which provides on/off


    Original
    ltc2952ot-23ltc2950/lttc2951+12ltc4411ltc4412hv2952fic 2952 pin out diagramltc2952 8 pinsi7913dnlt1767-2ltc2952ifltc2952iufsot-23 mosfet p-channel a1 1- mark29522952 4 4 PDF

    LTC2952 8 pin

    Abstract: ic 2952 pin out diagram
    Contextual Info: LTC2952 Pushbutton PowerPath Controller with Supervisor FEATURES DESCRIPTION n The LTC 2952 is a power management device that features three main functions: pushbutton on/off control of system power, ideal diode PowerPath controllers and system monitoring. The LTC2952’s pushbutton input, which provides on/off control of system power, has independently


    Original
    ltc2952ot-232952fbltc2952 8 pin+1ic 2952 pin out diagram PDF

    LTC2952 8 pin

    Abstract: 2952 LTC2952 LT1767-2 2952 4 4 LTC2952CF LTC2952CUF LTC2952IF Si6993DQ Si7913DN
    Contextual Info: LTC2952 Pushbutton PowerPathTM Controller with Supervisor FEATURES n n n n n n n n n n n DESCRIPTION Pushbutton On/Off Control Automatic Low Loss Switchover Between DC Sources Wide Operating Voltage Range: 2.7V to 28V Low 25 A Shutdown Current Guaranteed Threshold Accuracy: ±1.5% of


    Original
    ltc2952200ms20-pinot-23+13ltc2908ltc2950/lttc2951ltc4411ltc2952 8 pin2952lt1767-22952 4 4ltc2952cfltc2952cufltc2952ifsi6993dqsi7913dn PDF