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    MOSFET, ENHANCEMENT, N CHANNEL, 30V Search Results

    MOSFET, ENHANCEMENT, N CHANNEL, 30V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TK5R1A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet

    MOSFET, ENHANCEMENT, N CHANNEL, 30V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON and low gate charge.


    Original     		UT7410 UT7410 UT7410L-K08-3030-R UT7410G-K08-3030-R K08-3030: QW-R502-902 PDF

    25V 55A to-252

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3006 Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , cost-effectiveness and high switching speed.


    Original     		UT3006 UT3006 O-252 UT3006L-TN3-R UT3006G-TN3-R UT3006L-K08-5060-R UT3006G-K08-5060-R QW-R502-636 25V 55A to-252 PDF

    mosfet 2n4351

    Abstract: 2N4351
    Contextual Info: 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		2N4351 2N4351 100mA mosfet 2n4351 PDF

    LS4352

    Contextual Info: LS4352 N-CHANNEL MOSFET The LS4352 is an enhancement mode N-Channel Mosfet The LS4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		LS4352 2N4352 100mA PDF

    bare Die mosfet

    Contextual Info: LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		LS4351 2N4351 100mA bare Die mosfet PDF

    2N4352

    Contextual Info: 2N4352 N-CHANNEL MOSFET The 2N4352 is an enhancement mode N-Channel Mosfet The 2N4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		2N4352 2N4352 100mA PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT75N03 POWER MOSFET 75A, 30V, N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT75N03 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching and a minimum on-state resistance.


    Original     		UTT75N03 UTT75N03 UTT75N03L-TN3-R UTT75N03G-TN3-R UTT75N03L-TND-R UTT75N03G-TND-R O-252at QW-R205-046 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3006 Preliminary Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , cost-effectiveness and high switching speed.


    Original     		UT3006 UT3006 O-252 UT3006L-TN3-R UT3006G-TN3-R QW-R502-636 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		GSM3402A, OT-23 Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		GSM1032, OT-523 Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line


    Original     		GSM4822WS, Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3030, 0V/12A 0V/10A O-252-2L GSM3030DF O-252-2L) Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM6562, GSM6562TSF Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent R DS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3025S, O-252-2L Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM4936S, GSM4936SSF Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM4134, 0V/12A 0V/10A GSM4134SF Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3406S, OT-23-3L GSM3406SZF OT-23-3L) Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3400AS, OT-23 GSM3400ASJZF OT-23) Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM4412, GSM4412SF Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM4822S, GSM4822SSF Lane11 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM4210, GSM4210SF Lane11 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION As an N-channel enhancement mode power MOSFET, the UTC UTF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls


    Original     		UTF3055 UTF3055 UTF3055L-AA3-R UTF3055G-AA3-R UTF3055L-TN3-R UTF3055G-TN3-R OT-223 O-252 QW-R502-318 PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM6561, GSM6561TSF Lane11 PDF