MOS-CONTROLLED THYRISTOR Search Results

SMCTTA32N14A10

Abstract: TA32N14A10
Contextual Info: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.

TA65N14A10

Abstract: 1E21 MCT thyristor SMCTTA65N14A10 RG-47
Contextual Info: SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area

TA32N14A10

Abstract: SCR 3KA 37sn TA32N14 MOS Controlled Thyristor RG-47
Contextual Info: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area

TA32N14A10

Abstract: MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron
Contextual Info: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area

MOS Controlled Thyristor

Abstract: MCT thyristor MCT thyristor 1000v "mos controlled thyristor"
Contextual Info: ~ MCT/IQBT/DI0DESI2 MOS CONTROLLED THYRISTORS PAGE SELECTION G U ID E .

MOS-Controlled Thyristor

Abstract: SMCTTA65N14A10 MCT thyristor SMCTAA65N14A10 63SN 37PB SOLDER SMCTTA65N
Contextual Info: SMCTTA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, ThinPak Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 SolidtronTM This voltage controlled (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a

MCT thyristor

Abstract: TA65N14A10 MOS Controlled Thyristor MOS-Controlled Thyristor SMCTTA65N14A10
Contextual Info: SILICON^ ^POWGR SMCT TA65N14A10 Semiconductor Discharge Switch N-MOS Controlled Thyristor MCT , ThinPak

SMCTTA32N14A10

Abstract: MOS-Controlled Thyristor MCT thyristor MOS Controlled Thyristor
Contextual Info: SMCTTA32N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com N-MOS VCS, ThinPakTM Data Sheet Rev 2 - 07/10/2008 Description Package This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a

MOS-Controlled Thyristor

Abstract: SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type
Contextual Info: SMCTAA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 This Voltage Controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five

MOS-Controlled Thyristor

Abstract: SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247
Contextual Info: SMCTAA32N14A10 Advanced Pulse Power Device 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 12/19/07 Description Package Size - 4 This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five

MOS Controlled Thyristor

Abstract: TA49226
Contextual Info: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an

MCT thyristor

Abstract: TA32N14A10 MOS-Controlled Thyristor el 847 MOS Controlled Thyristor
Contextual Info: SILICON^ ^POW GR Application Notes SMCT TA32N14A10 Semiconductor Discharge Switch N-MOS Controlled Thyristor MCT , ThinPak

MCT harris

Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
Contextual Info: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an

AA65N14A10

Abstract: aa65n14 Solidtron SCR 3KA KA NMOS RG-47 MOS-Controlled Thyristor
Contextual Info: SMCT AA65N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with

Contextual Info: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C

MCT thyristor

Abstract: MOS-Controlled Thyristor MOS Controlled Thyristor Silicones GE thyristor WL 002 A
Contextual Info: S ILIC O N ^ POWGR , s u c t t a 32NUA10 Semiconductor Discharge Switch N-MOS controlled Thyristor MCT , ThinPak - (MCT) mountedonaThinPak®, ceramic“chip-scal^hybrid. rp— capability. Thissemi- 7 =„1,1

ED26 diode

Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

applications of mos controlled thyristor

Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

ED26 diode

Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the

NTE5457

Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

NTE5457

Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

Contextual Info: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)

MOS Controlled Thyristor

Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

NTE5457

Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be