MOS FET POWER AMPLIFIER MODULE FOR DCS 1800 Search Results

MOS FET Power Amplifier Module for DCS 1800

Abstract: MAX1785
Contextual Info: HITACHI PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-431A Z 2nd. Edition October 1996 _ Application For DCS 1800 class 1 1710 to 1785MHz. Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45% Typ

PF0414B

Contextual Info: PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-432C Z 4th Edition December 1997 Application For DCS 1800 classl 1710 to 1785 MHz. Features • 3stage amplifier : 0 dBm input • Lead less thin & small package : 2 mm Max & 0.2cc

Hitachi DSA002719

Contextual Info: PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-431B Z 3rd Edition December 1997 Application For DCS 1800 class1 1710 to 1785 MHz. Features • • • • 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 µsec

PF0414A

Abstract: MOS FET Power Amplifier Module for DCS 1800 Hitachi DSA00305
Contextual Info: PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-431B Z 3rd Edition December 1997 Application For DCS 1800 class1 1710 to 1785 MHz. Features • • • • 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 µsec

PF0414B

Abstract: HITACHI RF EDITION Hitachi DSA00164
Contextual Info: PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-432C Z 4th Edition December 1997 Application For DCS 1800 class1 1710 to 1785 MHz. Features • • • • • 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2cc

ecg 1720

Abstract: 431c PF0414A Hitachi DSA00231
Contextual Info: PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-431C Z 4th Edition Jan. 2001 Application For DCS 1800 class1 1710 MHz to 1785 MHz. Features • • • • 3stage amplifier Small package: 0.2 cc High efficiency: 45 % Typ High speed switching: 0.9 µsec

Contextual Info: PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-431B Z 3rd Edition December 1997 Application For DCS 1800 classl 1710 to 1785 MHz. Features • • • • 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 ¡iscc

HITACHI RF EDITION

Abstract: RF Hitec PF0414B MOS FET Power Amplifier Module for DCS 1800 pf041 ECG isolation amplifier DSA003712
Contextual Info: PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-432C Z 4th Edition December 1997 Application For DCS 1800 class1 1710 to 1785 MHz. Features • • • • • 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2cc

PF0414B

Abstract: Hitachi DSA00103 BLO1RN1-A62-001
Contextual Info: PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-432D Z 5th Edition Jan. 2001 Application For DCS 1800 class1 1710 MHz to 1785 MHz. Features • • • • • 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2 cc

PF0412

Abstract: bl01RN1-A62 MOS FET Power Amplifier Module for DCS 1800
Contextual Info: H ITACH I PF0412 MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-402C Z 4th. Edition December 1996 Application For DCS 1800 class 1 1710 to 1785MHz Features • Small package: 0.6cc • High efficiency; 35% Typ • High speed switching: 0.9 Usee

MAX1785

Contextual Info: HITACHI PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-432B Z 3rd. Edition October 1996 Application For D C S 1800 class 1 1710 to 1785MHz. Features • 3stage amplifier: OdBm input • Small package: 0.2cc • High efficiency: 35% Typ. at 1.8W

Contextual Info: HITACHI PF0410 MOS FET Power Amplifier Module for DSC 1800 Handy Phone HITACHI Application For DCS 1800 class 1: 1710 to 1785 M H z Features • • • Small package: 1 cc, 3g High efficiency: 35% Typ High speed switching: 0.9 isec Pin Arrangement •R F -E

GSM module

Abstract: MOS FET Power Amplifier Module for DCS 1800 pf08107 DCS1800 PF08107BP BLO1RN1-A62 Hitachi DSA00514
Contextual Info: PF08107BP MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-1399B Z 3rd Edition Feb. 2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). • For 3.5 V nominal operation

PF08114B

Abstract: pf08114 rfk110 Hitachi DSA00103 DCS1800 GSM900 AN 15525 BLO1RN1A v-band
Contextual Info: PF08114B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-1029A Z 2nd Edition Jan. 2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz) • For 3.5 V nominal operation

PF08103B

Abstract: MOS FET Power Amplifier Module for DCS 1800 PF08103B equivalent Hitachi DSA00103 DCS1800 E-GSM900 GSM900
Contextual Info: PF08103B MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-785D Z 5th Edition Jan. 2001 Application • Dual band amplifier for E-GSM900 (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). • For 3.5 V nominal battery use

PF08109B

Abstract: Hitachi DSA00103 F 915 DCS1800 pf08109
Contextual Info: PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821C Z 4th Edition Feb. 2001 Application • Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz) • For 3.5 V nominal battery use

BLO1RN1A

Abstract: dual gsm repeater DCS1800 PF08107BP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PF08114B

Abstract: dual gsm repeater pf08114 GSM repeater DCS1800 GSM900 GSM repeater circuit BLO1RN1-A62-001 GSM 900 mhz repeater circuit
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PF08103B

Abstract: GSM repeater circuit GSM 900 mhz repeater circuit DCS1800 E-GSM900 GSM900 PF08103B equivalent
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

GSM repeater circuit

Abstract: PF08122B pf08122 DCS1800 GSM900 GSM 900 mhz repeater circuit
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

GSM 900 mhz repeater circuit

Abstract: PF08128B GSM repeater circuit vapc DCS1800 DCS1900 PF08128BA
Contextual Info: PF08128BA MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone REJ03G0025-0100Z Rev.1.00 Apr.21.2003 Application • Triple band amplifier for GSM850 824 MHz to 849 MHz and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).

GSM repeater circuit

Abstract: PF08109B dual gsm repeater DCS1800 pf08109
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

GSM repeater circuit

Abstract: gsm repeater PF08134B GSM 900 mhz repeater circuit GSM repeater power amplifier module MOS FET Power Amplifier Module for DCS 1800 vapc DCS1800 DCS1900
Contextual Info: PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone REJ03G0075-0100Z Preliminary Rev.1 Sep.04.2003 Application • Triple band amplifier for GSM850 824 MHz to 849 MHz and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).

GSM repeater circuit

Abstract: GSM 900 mhz repeater circuit PF08123B DCS1800 DCS1900 GSM900 repeater gsm circuit
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog