MOS FET MARKING K4 Search Results

MOS FET MARKING K4 Result Highlights (5)

Part	Manufacturer	Description	Download
ICL7667MJA/883B	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA)	PDF
ICL7667MTV/883B	Rochester Electronics LLC	ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC)	PDF
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet

MOS FET MARKING K4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Pch MOS FET Abstract: SSM6L05FU Contextual Info: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Q1: Ron = 0.8 Ω max (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V)	Original	SSM6L05FU Pch MOS FET SSM6L05FU	PDF
mos fet marking k4 Abstract: Pch MOS FET SSM6L05FU Contextual Info: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package · Low on resistance · Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V)	Original	SSM6L05FU mos fet marking k4 Pch MOS FET SSM6L05FU	PDF
Contextual Info: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)	Original	SSM6L05FU	PDF
Contextual Info: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)	Original	SSM6L05FU	PDF
Contextual Info: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)	Original	SSM6L05FU	PDF
SSM6L05FU Abstract: k415 Contextual Info: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)	Original	SSM6L05FU SSM6L05FU k415	PDF
B0911 Abstract: DN2470 Contextual Info: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.	Original	DN2470 DSFP-DN2470 B091108 B0911	PDF
Contextual Info: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The DN2470 is a low threshold depletion-mode normally-on	Original	DN2470 DN2470 DSFP-DN2470 B041311	PDF
mos fet marking k4 Abstract: DN2470 125OC DN2470K4-G transistor MARKING K4 DMOS Contextual Info: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.	Original	DN2470 DN2470 DSFP-DN2470 B103108 mos fet marking k4 125OC DN2470K4-G transistor MARKING K4 DMOS	PDF
125OC Abstract: DN2470 DN2470K4-G Contextual Info: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage	Original	DN2470 DN2470 DSFP-DN2470 B041311 125OC DN2470K4-G	PDF
Contextual Info: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage	Original	DN2470 DN2470 DSFP-DN2470 C062513	PDF
2sk4075 Abstract: TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn Tin	Original	2SK4075 2SK4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY O-252 O-252) TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407	PDF
K4076 Abstract: 2SK4076 LOT CODE NEC 2SK407 2SK4076-ZK Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4076 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4076-ZK-E1-AY Pure Sn Tin	Original	2SK4076 2SK4076 2SK4076-ZK-E1-AY O-252 2SK4076-ZK-E2-AY O-252) K4076 LOT CODE NEC 2SK407 2SK4076-ZK	PDF
k4075 Abstract: 2SK4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn Tin 2SK4075-ZK-E2-AY	Original	2SK4075 2SK4075 2SK4075-ZK-E1-AY O-252 2SK4075-ZK-E2-AY O-252) k4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40	PDF

mos fet marking k4 Abstract: VP5225 VP5225K4 l5 transistor Contextual Info: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	VP5225 O-252, DSFP-VP5225 NR053008 mos fet marking k4 VP5225 VP5225K4 l5 transistor	PDF
Contextual Info: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications	Original	VP5225 O-252, DSFP-VP5225 NR053008	PDF
Contextual Info: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	VP5225 O-252, DSFP-VP5225 NR122107	PDF
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	DN3765 O-252, DSFP-DN3765 NR111707	PDF
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	DN3765 O-252, DSFP-DN3765 NR111207	PDF
D-PAK package Contextual Info: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	VP5225 O-252, DSFP-VP5225 NR031708 D-PAK package	PDF
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of	Original	DN3765 DSFP-DN3765 A103108	PDF
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	DN3765 DSFP-DN3765 A091208	PDF
mos fet marking k4 Abstract: dn37 DN3765 DN3765K4-G Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	DN3765 DSFP-DN3765 A103108 mos fet marking k4 dn37 DN3765 DN3765K4-G	PDF
Contextual Info: Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage	Original	DN3765 DSFP-DN3765 A070113	PDF

MOS FET MARKING K4 Search Results

MOS FET MARKING K4 Result Highlights (5)

MOS FET MARKING K4 Datasheets Context Search

Pch MOS FET

mos fet marking k4

SSM6L05FU

B0911

mos fet marking k4

125OC

2sk4075

K4076

k4075

mos fet marking k4

D-PAK package

mos fet marking k4