MOS 6500 Search Results

MP-25ZP

Abstract: NP90N04PUF
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER

82n04

Abstract: 82n04 UG NP82N04MUG nec 2502 4 pin NP82N04NUG date code marking NEC AK 1203 LOT CODE NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 82N04 to-263
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MUG, NP82N04NUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER

MP-25ZP

Abstract: NP90N04PUF V1435
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching PART NUMBER PACKAGE NP90N04PUF TO-263 MP-25ZP

NP82N04PUG

Abstract: NP82N04PUG1-E1B-AY nec 41-A MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP82N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP82N04PUG TO-263 MP-25ZP

APT12080LVR

Abstract: 1200v diode
Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT12080LVR

Abstract: APT1208
Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT1208

Abstract: APT12080B2VFR APT12080LVFR
Contextual Info: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT12080JVR

Abstract: APT1208
Contextual Info: APT12080JVR 1200V 15A 0.800W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Midcom

Abstract: APT12080JVFR
Contextual Info: APT12080JVFR 1200V POWER MOS V S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

PHC20306

Abstract: BP317 MS-012AA MAM118
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor

Contextual Info: APT12080JVFR 1200V POWER MOS V S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

BP317

Abstract: MS-012AA PHP1035
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSH102 N-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1997 Jun 19 Philips Semiconductors Preliminary specification N-channel enhancement mode MOS transistor BSH102

TH 201

Abstract: APT12080LVR
Contextual Info: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

BSH299

Abstract: transistor A1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES

BP317

Abstract: MS-012AA PHP1025
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025

BSH101

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSH101 N-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1997 Jun 19 Philips Semiconductors Preliminary specification N-channel enhancement mode MOS transistor BSH101

BP317

Abstract: MS-012AA PHP212L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP212L Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSP220 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Preliminary specification Philips Semiconductors 1999 Feb 01 PHILIPS Philips Semiconductors Preliminary specification N-channel dual gate MOS-FETs FEATURES BF904A; BF904AR; BF904AWR