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    MOS 6500 Search Results

    MOS 6500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOS 6500 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MP-25ZP

    Abstract: NP90N04PUF
    Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER


    Original     		NP90N04PUF NP90N04PUF O-263 MP-25ZP) O-263) MP-25ZP PDF

    MP-25ZP

    Abstract: NP90N04PUF V1435
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching PART NUMBER PACKAGE NP90N04PUF TO-263 MP-25ZP


    Original     		NP90N04PUF NP90N04PUF O-263 MP-25ZP) O-263) MP-25ZP V1435 PDF

    APT12080LVR

    Abstract: 1200v diode
    Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080LVR O-264 O-264 APT12080LVR 1200v diode PDF

    APT12080LVR

    Abstract: APT1208
    Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		APT12080LVR O-264 O-264 APT12080LVR APT1208 PDF

    Contextual Info: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080B2VFR APT12080LVFR O-264 O-264 O-247 PDF

    Contextual Info: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080B2VFR APT12080LVFR O-264 APT12080B2VFR O-247 PDF

    APT12080JVR

    Abstract: APT1208
    Contextual Info: APT12080JVR 1200V 15A 0.800W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080JVR OT-227 E145592 APT12080JVR APT1208 PDF

    PHC20306

    Abstract: BP317 MS-012AA MAM118
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor


    Original     		PHC20306 SC13b OT96-1 SCA54 135108/00/01/pp8 PHC20306 BP317 MS-012AA MAM118 PDF

    Contextual Info: APT12080JVFR 1200V POWER MOS V S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		APT12080JVFR OT-227 E145592 PDF

    BP317

    Abstract: MS-012AA PHP1035
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor


    Original     		PHP1035 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1035 PDF

    BP317

    Abstract: MS-012AA PHN1013
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor PHN1013


    Original     		PHN1013 SC13b OT96-1 SCA54 137107/00/01/pp8 BP317 MS-012AA PHN1013 PDF

    TH 201

    Abstract: APT12080LVR
    Contextual Info: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT12080LVR O-264 APT12080LVR TH 201 PDF

    BSH299

    Abstract: transistor A1
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES


    Original     		BSH299 SC13b OT363 SCA54 135108/00/01/pp12 BSH299 transistor A1 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES


    OCR Scan     		BSH301 BSH301 OT53Q) OT53Q 135002/00/01/pp5 PDF

    BP317

    Abstract: MS-012AA PHP212L
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP212L Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor


    Original     		PHP212L SC13b OT96-1 SCA54 137107/00/01/pp8 BP317 MS-012AA PHP212L PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor


    Original     		BSP225 SC13b OT223 SCA54 137107/00/01/pp12 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BSP220 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor


    Original     		BSP220 SC13b OT223 OT223 SCA54 137107/00/01/pp12 PDF

    PHP109

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP109 P-channel enhancement mode MOS transistor Product specification File under Discrete Semiconductors, SC07 1996 Jun 11 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP109 FEATURES


    Original     		PHP109 OT96-1) SCA49 117061/1200/01/pp12 PHP109 PDF

    MRC208

    Abstract: mrc212 MRC205 MRC210 BSP152 MRC211 MBB692 MRC206 MRC213 mrc204
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP152 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		BSP152 SC13b SCA54 137107/00/01/pp12 MRC208 mrc212 MRC205 MRC210 BSP152 MRC211 MBB692 MRC206 MRC213 mrc204 PDF

    BS250

    Abstract: BP317
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor


    Original     		BS250 SC13b SCA54 137107/00/01/pp8 BS250 BP317 PDF

    MBB692

    Abstract: MSB003 PMBF107
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		PMBF107 SC13b SCA54 137107/00/01/pp12 MBB692 MSB003 PMBF107 PDF

    MRC223

    Abstract: mrc222 MRC215 MRC216 BSP130 MRC220 MBB692 MBB691 sp marking MRC218
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		BSP130 SC13b SCA54 137107/1200/01/pp12 MRC223 mrc222 MRC215 MRC216 BSP130 MRC220 MBB692 MBB691 sp marking MRC218 PDF

    BP317

    Abstract: BSP89 MBB691 MBB692
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		BSP89 SC13b OT223 SCA54 137107/00/01/pp8 BP317 BSP89 MBB691 MBB692 PDF

    bsp126

    Abstract: MBB692 MDA716
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		BSP126 SC13b OT223 SCA54 137107/1200/01/pp12 bsp126 MBB692 MDA716 PDF