Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOS 4522 Search Results

    MOS 4522 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    CA3130AT/B
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOS 4522 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ197

    Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


    OCR Scan
    2SJ197 2SJ197 O2SK1483 PDF

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


    OCR Scan
    2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236 PDF

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan
    2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr PDF

    HC165A

    Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
    Contextual Info: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst


    OCR Scan
    TC5090AP TC5091AP TC5092AP TC5093AP TC35094P TC35095AP/AF TC35096AP/AF TC35097AP TC35098AP TC35080P HC165A TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A PDF

    AmSYS29

    Abstract: RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference
    Contextual Info: Advanced Micro Devices AmZ8000 User’s Manual ^1 ^ i . R ra m 'e Y lectron Advanced Micro Devices AmZ8000 User’s Manual The International Standard of Quality guarantees these electrical AQLs on all parameters over the operating tempera­ ture range: 0.1% on MOS RAMs & ROMs;


    OCR Scan
    AmZ8000 AmSYS29 RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference PDF

    4606 inverter ic

    Abstract: tf s544 4606 inverter SI 4606 S177 639 ic 7490 pin diagram lts 543 pin configuration IC 7490 pin configuration stv* 4326 internal diagram of 7490 IC
    Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD161606 720 OUTPUTS TFT-LCD SOURCE DRIVER WITH TIMING GENERATOR DESCRIPTION The µ PD161606 is a TFT-LCD source driver that includes display RAM. This driver has 720 outputs, a display RAM capacity of 115,200 bits 240 pixels x 3 bits x 96 lines + α rendering flag of


    Original
    PD161606 PD161606 4606 inverter ic tf s544 4606 inverter SI 4606 S177 639 ic 7490 pin diagram lts 543 pin configuration IC 7490 pin configuration stv* 4326 internal diagram of 7490 IC PDF

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


    OCR Scan
    2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717 PDF

    r 2501 kk 111

    Abstract: nec 2501 nec 2501 kk 2SK2498 14MQ tea 1020 itt 2501 3Fp 1d r 2501 kk 250
    Contextual Info: M O S Field Effect T ran sisto rs 2SK2498 N ^ - V * ; U X -f / \ ° 7 % y 5 1 > I l f 2SK2498liN51^^;UÌÉM M ° 7 - MOS FETT', “ M O S F E T >7 ^ f l * -f 7 51> T & , & f ê 7 7? ? ü . J . - 2 f f l W j ï ï ï à 3P Z < " jïX fW fà ïïià ^ M 'M T 'to


    OCR Scan
    2SK2498 2SK2498Â M/N07- MP-45F O-220) D10044JJ1V0DS00 r 2501 kk 111 nec 2501 nec 2501 kk 2SK2498 14MQ tea 1020 itt 2501 3Fp 1d r 2501 kk 250 PDF

    2SJ411

    Abstract: TC-8022 ru 4c diode
    Contextual Info: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0


    OCR Scan
    2SJ411 IEI-620) 2SJ411 TC-8022 ru 4c diode PDF

    ABB 07 kr 240

    Abstract: IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101
    Contextual Info: M O S*tt0 SS MOS Integrated Circuit u P D645 3 CMOS LSI ’V'f ?n=r > £ * - ? izffiAfr b l t X TV, t ' T * * T -i X 9 & £ // P D 6 4 5 3 i , _hC H ^iJ, -f-v V 7 > /f ffl C M 0 S L S I T ' T o fz, • -? -> '< & • h ' 6 0 X :? : £ ^ 7 * t ~ & ^ ' > • x ; iJ - > ' ^ - V 7 ^ i ' * f V X


    OCR Scan
    6453GT-101 27-544i ABB 07 kr 240 IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101 PDF

    j353

    Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
    Contextual Info: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*


    OCR Scan
    2SJ353 j353 j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353 PDF

    2sk82

    Abstract: ifoc 2SK823 JI 32
    Contextual Info: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .


    OCR Scan
    2SK823 2sk82 ifoc 2SK823 JI 32 PDF

    Contextual Info: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,


    OCR Scan
    2SK1122 PDF

    20nf10

    Abstract: MC14622
    Contextual Info: MOTOROLA SC {LOGÌC>~Tfl 6367252„M O TO R O LA M SC Ê | b3b72S5 007T727 98D L O G IC 4 J “ 79727 MC14522B MC14526B O T O R O L A CMOS MSI (LOW -POW ER C O M P L E M E N T A R Y MOS) P R E S E T T A B L E 4 - B IT D O W N C O U N T E R S PRESETTABLE


    OCR Scan
    b3b72S5 007T727 MC14522B MC14526B 20nf10 MC14622 PDF

    2sk1150

    Abstract: b 772 my1 PS7K 2SK 1411 t8506
    Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .


    OCR Scan
    2SK1150 50tti 2sk1150 b 772 my1 PS7K 2SK 1411 t8506 PDF

    TC7988

    Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
    Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y


    OCR Scan
    2SK2158 2SK2158Ià 73pDpà IEI-620) 1-N00 TC7988 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q PDF

    BS 551

    Contextual Info: C o m p o un d Field Effect P o w e r T ran s is to r fiPA1640 i y j y 7 ^ H PA 1 640 i, 2 - IN P U T A N D ^ f - 4 /\° 7 ~ MOS FET 7 K 8 [ U S M iJ & N ? 1+ h Z ^ it Z M OS FET T K T 'T c t lE N A B L E iS ii^ - l/ T U 'S - r o 0 ^ - 7 °> K K O B l± > W * T #7 < - V - K ^ ^ ^ T ' - T c


    OCR Scan
    uPA1640 PA1640GS -Tg17# BS 551 PDF

    Contextual Info: R&E INTERNATIONAL, INC. 4522B 4526B CMOS PROGRAMMABLE DOWN COUNTERS FEATURES ♦ Internally Synchronous fo r High Speed ♦ BCD Dacada 4522B or 4-B it Binary I4526B) Down Counters 4 Asychronous Preset Enable ♦ Asynchronous Reset ♦ Cascadable ♦ Logic Edge-Clocked Design


    OCR Scan
    4522B 4526B 4522B) I4526B) 4526B PDF

    s 452-2

    Contextual Info: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original
    SL-4522 SL-4522 SL-45221 SL-45222 SL45221 SL45222 EDS-100946 s 452-2 PDF

    Contextual Info: 4522B 4526B R&E INTERNATIONAL, INC. CMOS PROGRAMMABLE DOWN COUNTERS FEATURES ♦ ♦ Internally Synchronous fo r High Speed BCD Decade 4522B or 4-Bit Binary (4526B) Down Counters 4 Asychronous Preset Enable 4 Asynchronous Reset ♦ Cascadable ♦ Logic Edge-Clocked Design


    OCR Scan
    4522B 4526B 4522B) 4526B) 10Vdc 4522B 4526B PDF

    Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original
    SL-4522 SL-4522 SL-45221 SL-45222 PDF

    s 452-2

    Abstract: J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
    Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original
    SL-4522 SL-4522 SL-45222 SL-45221 s 452-2 J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222 PDF

    74LS189 equivalent

    Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
    Contextual Info: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.


    OCR Scan
    AMD-599 LM101 SN54LS01 132nd 74LS189 equivalent 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00 PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original
    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF