MOS 4016 Search Results

MOS 4016

Abstract: T4016B T40-16B
Contextual Info: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

853f

Abstract: 4007D 4011d MEM780P 4016P 4007F MEM855P mu-6-0103 855F MEM851P
Contextual Info: MOSFETs C/MOS & MULTIFET DEVICES COMPOSANTS MOSFÈTs C/MOS & MULTIFET MOSFETs C/MOS & MULTIFET BAUELEMENTE MULTIFET SW ITCHES ELECTRICAL CHARACTERISTICS No. Part Ho. # *M EM 780P * M EM 780D * M EM 780F JF*MEM 851P *M EM 851D *M EM 851F ‘ M EM 853P *M EM 853D

SGS-ATES l120

Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Contextual Info: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the

proton rx 4000 watts power amplifier circuit diagram

Abstract: RCA-CD401 cd22014 ICAN-6362 vogt 545 44 vogt inductor j9 570 17 013 20 RCA-CD4046B common cathode 7 SEGMENT DISPLAY LT 543 CD22014E CD22011
Contextual Info: RCA COS/MOS Integrated Circuits This DATABOOK contains complete technical information on RCA stand­ ard commercial COS/MOS integrated circuits. It covers the full line of RCA standard A- and B-series digital logic circuits, special-function circuits crosspoint switches and level shifters ,

ICAN-6267

Abstract: ICAN-6739 CD4025AE vacuum tube applications data book ICAN-6716 CD4061AD transistor bf 175 CD4040AF ican 6539 CD4059AD
Contextual Info: mItC J I COS/MOS Integrated Circuits This D A TA B O O K contains complete data and related application notes on COS/MOS digital integrated circuits presently available from RCA Solid State Division as standard products. For ease of type selection, functional diagrams are shown

Contextual Info: COS/MOS IN T E G R A T ED CIRCUITS 40/603 HCC/HCF HCC/HCF HCC/HCF HCC/HCF 40160 B 40161B 40162 B V . 401B3B - SYNCHRONOUS PROGRAMMABLE 4 -B IT COUNTERS 40160B - DECADE WITH ASYNCHRONOUS CLEAR 40161B - BINARY WITH ASYNCHRONOUS CLEAR 40162B - DECADE WITH SYNCHRONOUS CLEAR

d4016c

Abstract: CD4016 4016C IC CD4016
Contextual Info: August 1989 Semiconductor C D 4016M /C D 4016C Q uad Bilateral S w itch General Description The CD4016M /CD4016C is a quad bilateral switch which utilizes P-channel and N-channel complementary MOS CMOS circuits to provide an extremely high “ O F F ” resist­

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure

Contextual Info: INSTRUMENT AY-5-1016 AY-6-4016 Random/Sequential Access Multiplexers FEATURES • ■ ■ ■ ■ Directly interfaces with T T L/D T L and MOS Current or voltage modes of operation Random or sequential access Single ended or differential operation Expandable in either the sequential or random access

ay-5-1012

Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Contextual Info: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS

Contextual Info: O D O S A dvanced P o w er Te c h n o l o g y GFWER MOS ¡TE APT4016BN 400V 31.0A 0.16U APT4018BN 400V 29.0A 0.18Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 4016BN APT 4018BN

ic vertical la 78141

Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices

Contextual Info: A d va n ced P o w er Te c h n o l o g y 9 O D O S POWER MOS IV APT4016BN 400V 31.0A 0.16Q APT4018BN 400V 29.0A 0.180 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT APT 4016BN

HC165A

Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
Contextual Info: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

TH58NVG2S3

Abstract: TH58NVG2S3BFT00 TH58NVG toshiba TH58NVG th58 th58nv toshiba nand plane size TH58NVG2S MOS 4016 PSL 26
Contextual Info: TH58NVG2S3BFT00/TH58NVG2S8BFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT/256M × 16 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG2SxB is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable

Contextual Info: TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable

TH58NS512DC

Contextual Info: TH58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia TM ) DESCRIPTION The TH58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable

Contextual Info: TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia TM ) DESCRIPTION The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable

DIN527

Abstract: TC58NS512DC tr512
Contextual Info: TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M ´ 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable

working and block diagram of ups

Abstract: DIN527 TC58NS512ADC TC58NS512DC
Contextual Info: TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M u 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION ) The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable

DIODE 4008

Abstract: 4018B APT4016BN APT4018BN 4016BN
Contextual Info: D TO-247 G S POWER MOS IV APT4016BN 400V 31.0A 0.16Ω APT4018BN 400V 29.0A 0.18Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

c 64016

Abstract: AY-6-4016
Contextual Info: Gl M U A I INST RI M l M AY-5-1016 AY-6-4016 Random/Sequential Access Multiplexers FEATURES • ■ ■ ■ ■ D ire ctly interfaces w ith T T L /D T L and MOS C urre n t o r voltage m odes o f operation Random o r sequential access S ingle ended o r diffe re ntia l operation