MOS 362 Search Results

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

2SK1757

Abstract: 2SK1756 MEI-1202 TEA-1035
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SK1756/2SK1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1756/2SK1757 is N-channel MOS Field Effect Tran­ PACKAGE DIMENSIONS in m illim e te rs sistor designed for high voltage switching applications.

2SJ197

Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X

D1164

Abstract: 2SK2857 marking NX ic 451
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2857 N チャネル MOS FET スイッチング用 2SK2857 は，4V 駆動タイプの N チャネル縦型 MOS FET で，5V 電源系 IC の出力による直接駆動が可能なスイッ

2SK3054

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3054 N チャネル MOS FET スイッチング用 2SK3054 は，2.5 V 駆動タイプの N チャネル縦型 MOS FET です。低電圧駆動のためドライブ電流を考慮する必要

SP126

Abstract: lg lcd tv panel circuit diagram free SPC8106F0B SPC8108FOC 4X12 lcd SP-1108 sp1 1r4 FL400 xe p001 XCSL
Contextual Info: S-MOS S Y S T E M S A Seiko Epson Affiliate SPC8106 LCD/CRT VGA CONTROLLER Data Sheet Copyright 1997 S-MOS Systems Inc. All rights reserved. VDC This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,

2SK1398

Abstract: 2SJ184 TC-7644
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1398 N チャネル MOS FET 高速スイッチング用 2SK1398 は，N チャネル縦型 MOS FET で，ディジタル回路における高速スイッチング・デバイスとして最適です。

2SK3061

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3061 N チャネル パワー MOS FET スイッチング用 工業用 2SK3061 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途

L0565

Abstract: L0988 2SJ178 IR TK 19 544 ScansUX882
Contextual Info: NEC i i f / V 7 s— ? • S/— h mos 7 T MOS Field E ffe c t T r a n s is to r 2 S J1 7 8 MOS F E T ¡6 3 LJ$X<1V 51 2SJ178 Ü, P f t * / U f i MOS F E T T", 5 V b Ü i f ê B b 4* X ^ -y f- > y " • f " > < i - y , y i / / ^ K, # AX IC T - ’t 'o w F 7 > f7 i:ilt* to

2SK3058

Abstract: 2SK3058-S 2SK3058-Z MP-25 MP-25Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3058 N チャネル パワー MOS FET スイッチング用 工業用 2SK3058 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途

2SK2826

Abstract: 2SK2826-S 2SK2826-Z MP-25 MP-25Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2826 N チャネル パワー MOS FET スイッチング用 工業用 2SK2826 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途

SGS-ATES l120

Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Contextual Info: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the

K2234

Abstract: 2SK2234 TC-7958
Contextual Info: DATA SHEET NEC M BMOSSFIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK2234 is N-channel Power MOS Field Effect Transistor in m illim eters designed fo r high voltage switching applications.

CDP18S601

Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Contextual Info: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from

transistor LD

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST84 QUICK REFERENCE DATA DESCRIPTION N-channel vertical D-MOS transistor in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1 MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET

LD4A

Abstract: High-speed switching P-Channel mos ld3a
Contextual Info: XP131A0150SR Power MOS FET ♦ N-Channel Power MOS FET ♦ DMOS Structure • Applications • Notebook PCs ♦ Low On-State Resistance: 0.0 50 MAX ? Cellular and portable phones • On-board power supplies # Li.ion battery systems ♦ Ultra High-Speed Switching

Contextual Info: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

G3VM-21GR1

Abstract: MARKING 358 SOP-8 diode 6pin SMT G3VM-61G1 G3VM-21GR G3VM-21LR G3VM-21LR1 G3VM-41GR5 g3vm-61e1 G3VM-41LR5
Contextual Info: SELECTION GUIDE – MOS FET Relays MOS FET G3VM PCB Mount G3VM SMT G3VM SOP Dimensions mm in Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information

Contextual Info: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

Contextual Info: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)