MOS 245 Search Results

NP24N10CLB

Abstract: MP-25 NP24N10DLB NP24N10ELB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N10CLB, NP24N10DLB, NP24N10ELB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

MP-25

Abstract: NP55N10CLD NP55N10DLD NP55N10ELD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N10CLD, NP55N10DLD, NP55N10ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

diode 348

Abstract: 9840 diode APT50M50L2LL 085mh
Contextual Info: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

2SK3899

Abstract: 2SK3899-ZK 2SK38 D1717
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK

NEC 12E

Abstract: 2SJ303 MEI-1202 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR NEC ^•SBSE 2SJ303 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ303 is P-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for solenoid, motor and lamp driver.

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with

2SK3574

Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

2SK3574-ZK

Abstract: 2SK3574 2SK3574-S 2SK3574-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

Contextual Info: APT8028JVR 28A 0.280Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

EC 1030

Contextual Info: Preliminary TSF1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package

Contextual Info: Preliminary TSF10U45C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package

APT8028JVR

Contextual Info: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG6K4206 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package FG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is

Contextual Info: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.

Contextual Info: APT6020B2VFR APT6020LVFR 0.200Ω Ω 600V 30A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

2SJ355

Abstract: 2SJ355 DATASHEET C10535E MEI-1202 D11217
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.

2SJ197

Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X

7 segment common anode

Abstract: IC 7217 Unit COUNTER 7217 monostable multivibrator using ic 555 ic 7217 common anode 7-segment display 4 digit 20 pin ic 7-segment common anode 0 to 99 led display using two 7 segment displays 2N3904 Two Digit bcd counter
Contextual Info: Data Pack H Data Sheet Issued November 1985 003-245 C-MOS 4 decade counter driver ic 7217 RS stock number 307-749 The 7217 C-MOS counter is a four digit, presettable up/down counter with an on board presettable register continuously compared to the counter. The 7217

Contextual Info: APT6020LVR 600V 30A 0.200Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

max 9240

Abstract: max9240
Contextual Info: • R A dvan c ed W*Æ POWER Techno lo g y A PT8028J V R soov 2sa o.2soq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

m249

Abstract: NP83P04PDG MP-25ZP NP83P04PDG-E1-AY NP83P04PDG-E2-AY CTF100
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP83P04PDG-E1-AY Note