MOS 245 Search Results

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

QS6M4

Abstract: TSMT6 Pch MOS FET m04 fet
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.

nec d 1590

Abstract: D134 NP45N06 MP-25 NP45N06CLC NP45N06DLC NP45N06ELC
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP45N06CLC, NP45N06DLC, NP45N06ELC SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

NP24N10CLB

Abstract: MP-25 NP24N10DLB NP24N10ELB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N10CLB, NP24N10DLB, NP24N10ELB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

MP-25

Abstract: NP55N10CLD NP55N10DLD NP55N10ELD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N10CLD, NP55N10DLD, NP55N10ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

diode 348

Abstract: 9840 diode APT50M50L2LL 085mh
Contextual Info: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

D1804

Abstract: 70n10 70n10 data sheet NEC 70N10 NP70N10KUF NP70N10KUF-E2-AZ code marking NEC NP70N10KUF-E1-AZ NEC+70N10
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N10KUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N10KUF-E1-AZ NP70N10KUF-E2-AZ

d1941

Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2715GR is P-Channel MOS FET designed for power management applications of notebook computers and Li-ion battery protection circuit.

2SK1990

Abstract: 2SK1991 TC2-450 MEI-1202 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1990/2SK1991 is N-channel MOS Field Effect Tran­ PACKAGE DIMENSIONS in millim eters sistor designed for high voltage switching applications.

2SK3899

Abstract: 2SK3899-ZK 2SK38 D1717
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK

NEC 12E

Abstract: 2SJ303 MEI-1202 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR NEC ^•SBSE 2SJ303 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ303 is P-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for solenoid, motor and lamp driver.

M52 datasheet

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

a2794

Abstract: PA2794AGR PA2794
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2794AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2794AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with

2SK3574

Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

2SK3574-ZK

Abstract: 2SK3574 2SK3574-S 2SK3574-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

PA2794GR

Abstract: PA2794GR-E1-AZ a2794 transistor M22 marking
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2794GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2794GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1