MOS 2 GATE Search Results

Contextual Info: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)

Contextual Info: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)

SN7401

Abstract: SN5401 W14A DS7810J m7403 SN7403 DS8812N 7403 MM506 N14A
Contextual Info: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s

2SK12

Abstract: 2SK1282 MEI-1202 TEA-1035 A 1282 transistor 2SK128 2SK1282-Z
Contextual Info: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 2 8 2 , 1 2 8 2 - Z SWITCHING N-CHANIMEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect PACKAGE DIMENSIONS in m illim eters Transistor designed fo r solenoid, m otor and lamp

SN7401

Abstract: DS8812N DS8810J VU14A m7403 SN74* inverter DS7810J SN5401 7403 N14A
Contextual Info: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s

M140 diode

Abstract: g19278
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2716AGR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2716AGR is P-Channel MOS Field Effect 8 Transistor designed for power management applications of 5 1, 2, 3 : Source 4 : Gate

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 1, 2, 3 ; Source 4 ; Gate

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

TC-799

Abstract: NEC 2sk2134 nec 2134 2sk2134
Contextual Info: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.

PA2702GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2702GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2702GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate

Pch MOS FET

Abstract: US6M2 TUMT6
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2702GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2702GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate

PA2700GR

Abstract: PA2700
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2700GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate

PA2700GR

Abstract: UPA2700GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2700GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate

PA1759

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 1 ; Source 1 2 ; Gate 1

PA1763

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1763 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. 8 5 1 : Source 1 2 : Gate 1

PA1759

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 1 ; Source 1 2 ; Gate 1

PA1754

Abstract: PA1754G
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1754 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications 8 5 1 ; Source 1 2 ; Gate 1

PA1754

Abstract: PA1754G
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1754 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications 8 5 1 ; Source 1 2 ; Gate 1

PA2770GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2770GR SWITCHING DUAL P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2770GR is Dual P-Channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 1 ; Source 1 2 ; Gate 1

2SK2136

Contextual Info: MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 6 , 2 S K 2 1 3 6 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2136, 2SK2136-Z are N -channel Power MOS Field Effect Transistors designed fo r h ig h vo lta g e sw itch in g applications.

Contextual Info: TA8437F TENTATIVE o SMART MOS DUAL H-BRIDGE DRIVER IC Unit in mm 12.6 + 0.2 TA843TF is monolithic type Smart MOS IC 2 ways - 0 .2 5 ÖÖ 12.4 TYP H-bridge driver IC, which employs 2 units of H-bridge 0.23To35 lf^ ' composed of MOS FET output and their control unit.

PA1727

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1727 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1