MONOLITHIC MEMORIES Search Results

16P8

Contextual Info: Monolithic UlifUl Memories PAL/HAL Devices Logic Diagram 5-69 in

SST31LF041

Abstract: SST31LF041A
Contextual Info: 4 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF041 / SST31LF041A SST31LF041 / 041A4Mb Flash x8 + 1Mb SRAM (x8) Monolithic ComboMemory Preliminary Specifications FEATURES: • Monolithic Flash + SRAM ComboMemory – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM

Monolithic Memories

Abstract: PLE5P16 PLE6P16 Monolithic Memories PROM programming MONOLITHIC MEMORIES PROM
Contextual Info: KHI Monolithic PLE5P16 PLE6P16 Programmable Logic Element Family REVISED Memories / / / / / ////////////////////////////////////////ADVANCE INFORMATION Features/ Benefits Typical Applications • Programmable replacement lor conventional TTL logic • Address decoding

SST31LF021

Abstract: SST31LF021E
Contextual Info: 2 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF021 / SST31LF021E SST31LF021 / 021E2Mb Flash x8 + 1Mb SRAM (x8) Monolithic ComboMemory EOL Data Sheet FEATURES: • Monolithic Flash + SRAM ComboMemory – SST31LF021/021E: 256K x8 Flash + 128K x8 SRAM • Single 3.0-3.6V Read and Write Operations

EDI88130CS-RP

Contextual Info: EDI88130CS-RP HI-RELIABILITY PRODUCT 128Kx8 Plastic Monolithic SRAM FEATURES • Fast Access Times of 15*, 17*, 20, 25ns The EDI88130CS-RP is a ruggedized plastic 128Kx8 monolithic Static RAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacraficing all of the

C7555

Abstract: Y439 67C7555 67C7556 y846 S1481 75S110
Contextual Info: Monolithic Kl Memories 16-B it CMOS M ultiplier Slice 6 7C 7555 67C 7556 /// / / / / / / ////////////////////////////////////ADVANCE INFORMATION Ordering Information Features/ Benefits • TWos-complement, unsigned, or mixed operands PACKAGE TEMPERATURE 67C7555

4 bit barrel shifter circuit diagram

Abstract: 16 bit barrel shifter circuit diagram block diagram for barrel shifter barrel shifter block diagram basic block diagram of bit slice processors 4 bit barrel shifter circuit 4 bit barrel shifter block diagram 4 bit barrel shifter circuit for left shift barrel shifter circuit diagram 3 bit barrel shifter circuit diagram
Contextual Info: 16-B it Barrel Shifter Slice 677530 Monolithic G l Memories / / / / / / / / / //////////////////////////////////1ADVANCE INFORMATION Packaging Information Features/ Benefits • Left/Right shift and rotate to any position within 1 cycle PART NUMBER | PACKAGE

applications for modified booth algorithm

Abstract: 4 bit modified booth multipliers mpy016h MPY016H trw 8 bit modified booth multipliers Modified Booth Multipliers 67C7016-35 67C7016-45 67C7016-55 P22P6
Contextual Info: 1 6 x 1 6 Bit CMOS M ultiplier 67C 7016 - 3 5 /- 4 5 /- 55 67C 7017 - 3 5 /- 4 5 /- 55 Monolithic RISII Memories / / / / / / / / / //////////////////////////////////iADVANCE INFORMATION Packaging Information Features/ Benefits • 16k16 parallel multiplier

Monolithic Memories

Abstract: palasm 20L8
Contextual Info: Monolithic Z H A L 2 4 A Series Zero-Power Hard A rray Logic Gl Memories V / / / / / / / / / / // / // / // / / / / / / / / / / / / / / / / / / / / / / / M D V A N C E INFORMATION Areas of Application Features/ Benefits • CMOS technology provides zero standby power

20L8

Abstract: palasm Monolithic Memories
Contextual Info: Monolithic Z H A L 2 4 A Series Zero-Power Hard A rray Logic Gl Memories V / / / / / / / / / / // / // / // / / / / / / / / / / / / / / / / / / / / / / / M D V A N C E INFORMATION Areas of Application Features/ Benefits • CMOS technology provides zero standby power

PLS105

Abstract: PLS105-37 PLS168
Contextual Info: Program m able Logic Sequencer PLS105-37 PLS167-33 PLS168-33 Monolithic K M Memories / / / / / / / / / / / / / / / / / //////////////////////////MDVANCE I N F O R M A T I O N Features/B enefits PART NO. PINS Advanced Mealy state machine/sequencer architecture

PAL16l8A MMI

Abstract: PAL16l8 MMI M2018 pal16r6b PAL20L10 MMI PAL16L8A PAL20S10 PAL16L8A4 AL20S MMI PAL14L8
Contextual Info: Military PAL Devices Monolithic Memories’ Military Programmable Array Logic PAL devices provide state machine and combinatorial logic solutions processed to military criteria. We offer the largest number of JAN 38510 and Standard Military Drawing PAL products in the

Contextual Info: CMOS SUPERSYNC FIFO 8,192x18, 16,384x18 PRELIMINARY IDT72255 IDT72265 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72255/72265 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories

Contextual Info: CMOS SUPERSYNC FIFO 8 ,1 92x18,16,384x18 IDT72255 IDT72265 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72255/72265 are monolithic, CMOS, high capac­ ity, highspeed, low power First-In, First-Out FIFO memories

Contextual Info: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories

IDT72261

Abstract: IDT72271
Contextual Info: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capacity, high speed, low power first-in, first-out FIFO memories

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

IDT72261

Abstract: IDT72271
Contextual Info: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capacity, high speed, low power first-in, first-out FIFO memories

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

UT8ER512K32

Abstract: aeroflex sram edac
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet September 4, 2008 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

application of programmable array logic

Contextual Info: Basic Design with PLDs Advanced Micro Devices INTRODUCTION The Programmable Array Logic device, commonly known as the PAL device, was invented at Monolithic Memories in 1978. The concept for this revolutionary type of device sprang forth as a simple solution to the

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state

UT8ER512K32

Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

Contextual Info: IDT72261 IDT72271 CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories with clocked read and write controls. These FIFOs are