MONOLITHIC AMPLIFIER 11 Search Results
MONOLITHIC AMPLIFIER 11 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| OPA541BM | Texas Instruments | High Power Monolithic Operational Amplifier 8-TO-3 |
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| OPA541SM | Texas Instruments | High Power Monolithic Operational Amplifier 8-TO-3 |
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| OPA541AM | Texas Instruments | High Power Monolithic Operational Amplifier 8-TO-3 |
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| HA2-2541-2 | Rochester Electronics LLC | HA2-2541 - Operational Amplifier |
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| LM759H/B | Rochester Electronics LLC | LM759 - Power Operational Amplifier |
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MONOLITHIC AMPLIFIER 11 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CHA2295Contextual Info: CHA2295 RoHS Compliant 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication |
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cha22956-11ghz14dbmdscha22957262 | |
CHA2295Contextual Info: CHA2295 6 - 11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description OUT 1 The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication |
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cha229511ghz-11ghz14dbm+2 | |
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Contextual Info: CHA2295 RoHS Compliant 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication |
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cha22956-11ghz14dbmdscha22957262 | |
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Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS |
OCR Scan |
cha7114dscha7114-0197 | |
650NM photodiode
Abstract: OPT101 application OPT101 LOG100 106V metal proximity detector sensor photodiode 650nm nep 8pin sip 10k
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opt101650nm14khzina118+9 | |
TC911
Abstract: ICL7650 TC911ACPA LTC1052 OP07 OP07E TC911A TC911B op07 metal type TC911BCPA
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tc911atc911btc911icl7650/7652+8 | |
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Contextual Info: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier monolithic circuit. The circuit is manufactured with a pHEMT |
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cha3688aqdg5-30ghza3688a26dbm+3 | |
pin diagram of op-amp ic 741
Abstract: IC 741 OPAMP IC 741 OPAMP using transistor opamp 741 dip TC9011
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OCR Scan |
tc901icl765023-23wpin diagram of op-amp ic 741+4 | |
OP 741
Abstract: monolithic amplifier 11 MONOLITHIC AMPLIFIERS op07 oscillator op07 metal type Thermocouple Type K material ca 600 op07 equivalent single supply op07 metal type datasheet operational amplifier 741 oscillator circuit with op amp 741 its output
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tc911atc911btc911icl7650/7652+12 | |
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Contextual Info: Semiconductor, Inc. T C 9 11A T C 911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and |
OCR Scan |
tc911icl7650/7652ltc1052op07/741/7650+3 | |
650NM photodiode
Abstract: OPT101 LOG100 OPT101P OPT101P-J OPT101W
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opt101650nm14khz650nm photodiode+4 | |
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Contextual Info: CHA4861-QGG 6-11 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4861-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically commercial |
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cha4861-qgga48616-11ghz29dbm+3 | |
LOG100
Abstract: OPT101 OPT101P OPT101P-J OPT101P-R OPT101P-R-J OPT101W
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opt101log100log10v02/v01+8 | |
photodiode 650nm nep
Abstract: 650NM photodiode 650NM photodiode 40 kilohertz 650NM photodetector LOG100 OPT101 Photoconductive Infrared Sensor 106V light dependent resistor metal proximity detector sensor
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opt101ina118log100log10+11 | |
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911ac
Abstract: GE 7652 911B
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tc91110-volt911acge 7652+1 | |
CHA5093TCF/24
Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
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cha5093tcf24-26ghz29dbmdscha50932035+5 | |
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Contextual Info: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW1 11 The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, |
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cha3694-qdg31-40ghza3694yyww11+3 | |
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Contextual Info: CHA4250-QDG 5.5-11GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4250-QDG is a three stages monolithic GaAs medium power amplifier circuit. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT |
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cha4250-qdg5-11ghz31dbm125ma+2 | |
X-band antenna
Abstract: x-band power transistor x band power amplifiers
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28dbmv/170maai1004ai10040179+4 | |
CHA4033Contextual Info: CHA4033 14-16GHz Power Amplifier GaAs Monolithic Microwave IC Description Vg The CHA4033 amplifier is a two stage monolithic medium power amplifier. The circuit is manufactured with a MESFET process : 0.5 µm gate length, via holes through the substrate, air bridges and |
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cha403314-16ghz24dbmdscha40338159 | |
NN12
Abstract: P35-4101-000-200 power amplifier 12 GHZ 4101000200
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p35-4101-000-200500mhz20dbm462/sm/00517/200+3 | |
CHA5014Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to |
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cha501430dbmdscha50149090-31 | |
AN0020
Abstract: CHA5014 9v23
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cha501430dbmdscha50140112an0020+1 | |
TA7540P
Abstract: TA7540F
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ta7540p/fta7540pta7540f | |