MONOLITHIC AMPLIFIER 11 Search Results
MONOLITHIC AMPLIFIER 11 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TA75W01FU |
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Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 | Datasheet | ||
MC6800CP |
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MC6800 - Monolithic 8-bit microprocessor 1.0 MHZ |
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MC68B00CP |
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MC68X00 - Monolithic 8-bit microprocessor 2.0 MHZ |
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TC75S51F |
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Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 | Datasheet | ||
TC75S102F |
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 | Datasheet |
MONOLITHIC AMPLIFIER 11 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CHA2295Contextual Info: CHA2295 RoHS Compliant 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication |
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CHA2295 6-11GHz CHA2295 6-11GHz 14dBm DSCHA22957262 | |
CHA2295Contextual Info: CHA2295 6 - 11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description OUT 1 The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication |
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CHA2295 11GHz CHA2295 -11GHz 14dBm DSCHA22952240 28-Aug | |
Contextual Info: CHA2295 RoHS Compliant 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication |
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CHA2295 6-11GHz CHA2295 6-11GHz 14dBm DSCHA22957262 | |
Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS |
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CHA7114 CHA7114 DSCHA7114-0197 | |
650NM photodiode
Abstract: OPT101 application OPT101 LOG100 106V metal proximity detector sensor photodiode 650nm nep 8pin sip 10k
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OPT101 OPT101 650nm) 14kHz INA118 LOG100 log10 V02/V01) 650NM photodiode OPT101 application LOG100 106V metal proximity detector sensor photodiode 650nm nep 8pin sip 10k | |
TC911
Abstract: ICL7650 TC911ACPA LTC1052 OP07 OP07E TC911A TC911B op07 metal type TC911BCPA
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TC911A TC911B TC911 ICL7650/7652 LTC1052 TC911. OP07/ ICL7650 TC911ACPA OP07 OP07E TC911A TC911B op07 metal type TC911BCPA | |
Contextual Info: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier monolithic circuit. The circuit is manufactured with a pHEMT |
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CHA3688aQDG 5-30GHz CHA3688aQDG A3688A 5-30GHz 26dBm 115mA 24L-QFN4x4 DSCHA3688aQDG1035 | |
pin diagram of op-amp ic 741
Abstract: IC 741 OPAMP IC 741 OPAMP using transistor opamp 741 dip TC9011
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TC901 ICL7650 TC901 23-23W pin diagram of op-amp ic 741 IC 741 OPAMP IC 741 OPAMP using transistor opamp 741 dip TC9011 | |
OP 741
Abstract: monolithic amplifier 11 MONOLITHIC AMPLIFIERS op07 oscillator op07 metal type Thermocouple Type K material ca 600 op07 equivalent single supply op07 metal type datasheet operational amplifier 741 oscillator circuit with op amp 741 its output
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TC911A TC911B TC911 ICL7650/7652 LTC1052 TC911. OP07/ OP 741 monolithic amplifier 11 MONOLITHIC AMPLIFIERS op07 oscillator op07 metal type Thermocouple Type K material ca 600 op07 equivalent single supply op07 metal type datasheet operational amplifier 741 oscillator circuit with op amp 741 its output | |
Contextual Info: Semiconductor, Inc. T C 9 11A T C 911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and |
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TC911 ICL7650/7652 LTC1052 TC911. OP07/741/7650 20msec. TC911A TC911B | |
650NM photodiode
Abstract: OPT101 LOG100 OPT101P OPT101P-J OPT101W
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OPT101 OPT101 650nm) 14kHz 650NM photodiode LOG100 OPT101P OPT101P-J OPT101W | |
Contextual Info: CHA4861-QGG 6-11 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4861-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically commercial |
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CHA4861-QGG CHA4861-QGG A4861 6-11GHz 29dBm 160mA 28L-QFN5x5 DSCHA4861-QGG2262 | |
LOG100
Abstract: OPT101 OPT101P OPT101P-J OPT101P-R OPT101P-R-J OPT101W
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OPT101 OPT101 LOG100 log10 V02/V01) REF102 OPA627 IN4148 LOG100 OPT101P OPT101P-J OPT101P-R OPT101P-R-J OPT101W | |
photodiode 650nm nep
Abstract: 650NM photodiode 650NM photodiode 40 kilohertz 650NM photodetector LOG100 OPT101 Photoconductive Infrared Sensor 106V light dependent resistor metal proximity detector sensor
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OPT101 OPT101 INA118 LOG100 log10 V02/V01) REF102 OPA627 photodiode 650nm nep 650NM photodiode 650NM photodiode 40 kilohertz 650NM photodetector LOG100 Photoconductive Infrared Sensor 106V light dependent resistor metal proximity detector sensor | |
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911ac
Abstract: GE 7652 911B
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TC911 TC911 10-Volt 911ac GE 7652 911B | |
CHA5093TCF/24
Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
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CHA5093TCF 24-26GHz 24-26GHz 29dBm DSCHA50932035 04-Feb CHA5093TCF/24 RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate | |
Contextual Info: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW1 11 The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, |
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CHA3694-QDG 31-40GHz A3694 YYWW11 CHA3694-QDG 31-40GHz 25dBm 24L-QFN4x4 DSCHA3694QDG9322 | |
Contextual Info: CHA4250-QDG 5.5-11GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4250-QDG is a three stages monolithic GaAs medium power amplifier circuit. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT |
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CHA4250-QDG 5-11GHz CHA4250-QDG 5-11GHz 31dBm 125mA 24L-QFN4x4 DSCHA4250-QDG3021 | |
X-band antenna
Abstract: x-band power transistor x band power amplifiers
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28dBm V/170mA. AI1004 AI10040179 ES-CHA5115-99F X-band antenna x-band power transistor x band power amplifiers | |
CHA4033Contextual Info: CHA4033 14-16GHz Power Amplifier GaAs Monolithic Microwave IC Description Vg The CHA4033 amplifier is a two stage monolithic medium power amplifier. The circuit is manufactured with a MESFET process : 0.5 µm gate length, via holes through the substrate, air bridges and |
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CHA4033 14-16GHz CHA4033 14-16GHz 24dBm DSCHA40338159 | |
NN12
Abstract: P35-4101-000-200 power amplifier 12 GHZ 4101000200
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P35-4101-000-200 500MHz 20dBm P35-4101-000-200 462/SM/00517/200 NN12 power amplifier 12 GHZ 4101000200 | |
CHA5014Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to |
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CHA5014 CHA5014 30dBm DSCHA50149090-31 | |
AN0020
Abstract: CHA5014 9v23
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CHA5014 CHA5014 30dBm DSCHA50140112 AN0020 9v23 | |
TA7540P
Abstract: TA7540F
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TA7540P/F TA7540P, TA7540F TA7540P TA7540F |