MONOLITHIC AMPLIFIER 11 Search Results

pin diagram of op-amp ic 741

Abstract: IC 741 OPAMP IC 741 OPAMP using transistor opamp 741 dip TC9011
Contextual Info: W TELEDYNE COMPONENTS TC901 MONOLITHIC, AUTO-ZEROED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • The TC901 is a monolithic, auto-zeroed operational amplifier. It is a second-generation design of the TC91X series, the world's first monolithic, CMOS chopper-stabi­

cha1077a98f

Abstract: RO3003 77GHz CHA1077A
Contextual Info: CHA1077a RoHS COMPLIANT W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077a is a W-band monolithic 3stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for

Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier UMS A3667A A3688A YYWWG GaAs Monolithic Microwave IC in SMD leadless package The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power

NF 838 G

Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

Contextual Info: TO SHIBA TA1249F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUITS SILICON MONOLITHIC T A 1 249 F 2-CHANNEL RECORDING AMPLIFIER & PRE-AMPLIFIER FOR VCR The TA1249F is a 2-channel recording amplifier and pre­ amplifier for use in VCR. Since the recording amplifier

CHA7010

Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA2090-99F/00

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 CHA2090
Contextual Info: CHA2090 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

Contextual Info: MAX2090 50MHz to 1000MHz Analog VGA with Threshold Alarm Circuit and Error Amplifier for Level Control General Description The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, error amplifier, and alarm circuit, designed to

CHA2395

Abstract: transistor BP 109
Contextual Info: CHA2395 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT

diode Free 18-24GHz

Abstract: CHA5290
Contextual Info: CHA5290 17.7-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

EL2002ACN

Abstract: EL2002 EL2002C EL2002CM EL2002CN MIL-I-45208A
Contextual Info: Low Power 180 MHz Buffer Amplifier Features General Description           The EL2002 is a low cost monolithic high slew rate buffer amplifier Built using the Elantec monolithic Complementary Bipolar process this patented buffer has a b 3 dB bandwidth of

CHA5296

Contextual Info: CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

TO99 package

Contextual Info: TELEDYNE COMPONENTS 3tE t • S S1 7bO S 0 0 0 7 S 7 8 T BTSC WTELEDYNE COMPONENTS 1344 MONOLITHIC WIDEBAND, JFET INPUT OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ The 1344 Precision, High Speed Monolithic Operational Amplifier offers significant improvements in features vs

TA7628P

Abstract: TA7628 TAPE recording ic ALC ic TA7628HP ALC Automatic Level Control PRE-AMPLIFIER FOR TAPE RECORDER Vno21
Contextual Info: TA7628P/HP TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7628P,TA7628HP Amplifier System for Cassette Tape Recorder TA7628P and TA7628HP are Pre + Power amplifier system designed for cassette tape recorder. Features • Recording playback for pre amplifier

1N4002

Abstract: 5962D9568401VEA HS1-2400RH-Q HS-2400RH
Contextual Info: HS-2400RH TM Data Sheet Radiation Hardened PRAM Four Channel Programmable Operational Amplifier HS-2400RH is a four-channel programmable amplifier providing a level of versatility unsurpassed by any other monolithic operational amplifier. Versatility is achieved by

La7793

Contextual Info: Ordering number : ENA1146 LA7793V Monolithic Linear IC With Driver amplifier for ADC AGC amplifier http://onsemi.com Overview The LA7793V is a AGC amplifier with Driver amplifier for ADC. It is ideally suited for use with receiver systems receiving QPSK and/or QAM data transmissions.

PEAK DETECTOR

Abstract: power amplifier PA DRIVER AMPLIFIER 714S LMX3120M
Contextual Info: LMX3120 A l N a t io n a l ^ ADVANCE INFORMATION Semiconductor LMX3120 1.9 GHz Power Amplifier, Low Noise Amplifier, Peak Detector General Description Features The 1.9 GHz power amplifier PA , low noise amplifier (LNA), and peak detector, is a monolithic, integrated radio

h 11381

Abstract: LF6197 C1995 J14A LF6197CCJ
Contextual Info: LF6197 160 ns Monolithic Sample-and-Hold Amplifier General Description Features The LF6197 is a monolithic sample-and-hold S H amplifier that uses a proprietary ‘‘current-multiplexed sample-andhold’’ technique to offer extremely high speed while maintaining 12 bits or higher accuracy The device is built using

CHA2091

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2091 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 1 It is supplied in chip form. Gain dB Main Features • Broad band performance 36-40GHz ■ 3.0dB noise figure, 36-40GHz

irf 652

Contextual Info: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

TA8217P

Abstract: TA8217 0.5w audio amplifier circuit diagram HDIP-12 HDIP ta82 0245Vrms W3010
Contextual Info: INTEGRATED T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT CIRCUIT TECHNICAL TA8217P DATA SILICON MONOLITHIC DUAL AUDIO POWER AMPLIFIER TA8217P is dual audio power amplifier designed for the audio power amplifier of portable radio cassette tape recorder.

M5204P

Abstract: 0/M5204P
Contextual Info: MITSUBISHI SOUND PROCESSORS M5204P ANALOG OUTPUT AMPLIFIER WITH MUTE FUNCTION DESCRIPTION PIN CONFIGURATION TOP VIEW The M5204P is a semiconductor integrated circuit designed for audio analog signal amplifier. It is a monolithic type IC containing a buffer amplifier and

Contextual Info: T O SH IB A TA1250F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 1 1 RflF • mm. m h t ■ 4-CHANNEL RECORDING AMPLIFIER & PRE-AMPLIFIER FOR VCR The TA1250F is a 4-channel recording amplifier and pre­ amplifier for use in VCR. Since the recording amplifier

NN12

Abstract: P35-4100-0
Contextual Info: P35-4100-0 MONOLITHIC BROADBAND AMPLIFIER, 0.05 - 3.5GHz Features • Ultra Broadband • Flat Frequency response with direct gain control • 20dBm output power capability • Input and output matched to 50Ω Description The P35-4100-0 is a high performance monolithic broadband amplifier designed for use in a wide range