MONITOR PHOTODIODE Search Results
MONITOR PHOTODIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| OPT301M | Texas Instruments | Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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| OPT101P-J | Texas Instruments | Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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| OPT101P-JG4 | Texas Instruments | Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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| OPT101P | Texas Instruments | Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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| OPT101PG4 | Texas Instruments | Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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MONITOR PHOTODIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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InGaAs Epitaxx EPM
Abstract: JDS Uniphase photodiode epm 605 606L EPM605LL JDS Uniphase photodiode epm EPITAXX 605 EPITAXX PIN Photodiode 4 Ghz 1550 nm pin photodiode 1550 sensitivity EPITAXX EPM
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ingaas epitaxx epmjds uniphase photodiode epm 605606lepm605ll+6 | |
Sun Enterprise 250
Abstract: silicon carbide LED silicon carbide
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sun enterprise 250silicon carbide ledsilicon carbide | |
SUS304-CSP
Abstract: XW41 F3UV F32-300 SUS304CSP measurement sensor illumination intensity F3UV-A30 AB-277 ab276
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sus303f32-300f32-70f39-fu1m+11 | |
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Contextual Info: ROITHNER LASERTECHNIK PRESENTS NEW MID-IR LASER DIODES 2.0 um and 2.3 um MID-IR laser diodes, 5.6 mm with monitor photodiode, room temperature operation ! RLTCM-2010D, 2.0 um, 10 mW cw, 5.6 mm with monitor photodiode, datasheet on request RLTCM-2025D, 2.0 um, 25 mW cw, 5.6 mm with monitor photodiode, datasheet |
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rltcm-2010drltcm-2025drltcm-2307drltcm-2310d+1 | |
Photodiode
Abstract: VCSEL photodiode 1000 nm VCSEL photodiode SD150-14-002 850 photodiode VCSEL die Photodiode, nm NEP vcsel nm monitor photodiode
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sd150-14-002photodiodevcselphotodiode 1000 nm+6 | |
edfa pump laserContextual Info: SD 048-11-21-000 Pump Laser Monitor Photodiode The SD 0480-11-21-000 Pump Laser Monitor Photodiode was designed to monitor the optical power of short wavelength 500 to 1000 nm semiconductor lasers, such as the 980 nm EDFA pump laser. These OEM detectors are supplied as bare die soldered to a ceramic block, which facilitates |
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edfa pump laser | |
ABNM
Abstract: Current Monitors MAX4007 MAX4007EUT-T MAX4008 MAX4008EUT-T max4009 "Current Monitors"
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250namax4007max4008max4007/max4008+6 | |
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Contextual Info: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value |
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g8909-01kird1053e03 | |
g890901
Abstract: G8909-01
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g8909-01kird1053e03g890901 | |
Infrared-Sensor tsop1738
Abstract: of infrared sensor tsop1738 sony remote control TSOP1738 sensor how to test TSOP1738 sensor datasheet of infrared sensor tsop1738 RCT842MN ROC130 rc7009 tsop1738
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an1749st72751st72771sdip56+10 | |
L5919
Abstract: hamamatsu PIN TO5
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l5919830nmhamamatsu pin to5 | |
InGaas PIN photodiode chip
Abstract: G8909-01 KIRD1053E02 SE-171
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g8909-01se-171kird1053e02ingaas pin photodiode chip | |
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Contextual Info: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter |
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g8909-01se-171kird1053e02 | |
DWDM AWG
Abstract: InGaAs photodiode array chip
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g8909-01se-171kird1053e02dwdm awg+1 | |
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photo diode array InGaAs
Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
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g8909-01se-171kird1053e02photo diode array ingaas+1 | |
InGaAs photodiode array chip
Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
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g8909-01se-171kird1053e01ingaas photodiode array chip+1 | |
PIN photodiode crosstalkContextual Info: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter |
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g8909-01se-171kird1053e01pin photodiode crosstalk | |
FTM7920EB
Abstract: ftm7920 FTM-7920 Mach-Zehnder modulator modulator fujitsu Mach-Zehnder modulator dual drive
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ftm7920ebfcsi0502m200ftm7920ftm-7920+3 | |
Mach-Zehnder modulator
Abstract: FTM7923FN ftm79 Photodiode, 10ghz
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ftm7923fnmach-zehnder modulatorftm79photodiode, 10ghz | |
FTM7922ER
Abstract: Mach-Zehnder modulator dual electrode mach-zehnder Mach-Zehnder modulator dual drive
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10gb/sftm7922erfcsi0502m200mach-zehnder modulator+2 | |
FTM7921ER
Abstract: dual electrode mach-zehnder Mach-Zehnder modulator dual drive
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10gb/sftm7921erfcsi0502m200dual electrode mach-zehnder+1 | |
FTM7923FN
Abstract: nrz optical modulator
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ftm7923fnnrz optical modulator | |
ACBYContextual Info: MP3430 90V Step-Up Converter with APD Current Monitor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3430 is a monolithic step-up converter that integrates a power switch and a biased avalanche photodiode APD current monitor. The device can double the output voltage |
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mp3430acby | |
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Contextual Info: MP3430 90V Step-Up Converter with APD Current Monitor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3430 is a monolithic step-up converter that integrates a power switch and a biased avalanche photodiode APD current monitor. The device can double the output voltage |
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mp3430 | |