G890901 Search Results
G890901 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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G8909-01 | Hamamatsu | InGaAs PIN photodiode array | Original | 111.03KB | 3 | ||
G8909-01 | Hamamatsu Photonics | InGaAs PIN photodiode array | Original | 92.41KB | 3 |
G890901 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PIN photodiode crosstalkContextual Info: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter |
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G8909-01 SE-171 KIRD1053E01 PIN photodiode crosstalk | |
G8909-01
Abstract: KIRD1053J02 1na100
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G8909-01 KIRDB0268JA KIRDA0158JB 435-85581126-1TEL 434-3311FAX KIRD1053J02 G8909-01 KIRD1053J02 1na100 | |
InGaas PIN photodiode chip
Abstract: G8909-01 KIRD1053E02 SE-171
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G8909-01 SE-171 KIRD1053E02 InGaas PIN photodiode chip G8909-01 KIRD1053E02 | |
g890901
Abstract: G8909-01
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G8909-01 KIRD1053E03 g890901 G8909-01 | |
Contextual Info: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter |
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G8909-01 SE-171 KIRD1053E02 | |
DWDM AWG
Abstract: InGaAs photodiode array chip
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G8909-01 SE-171 KIRD1053E02 DWDM AWG InGaAs photodiode array chip | |
Contextual Info: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用 |
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Contextual Info: InGaAs PINフォトダイオードアレイ G8909-01 DWDMモニタ用フォトダイオードアレイ 特長 用途 250 µmピッチ, 40 ch 並列出力 低クロストーク AWG付DWDMモニタ 高いチップ位置精度: ±0.05 mm 構成 項目 仕様 |
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G8909-01 KIRDB0267JA KIRDB0268JA KIRDB0269JB KIRDA0158JB KIRD1053J03 | |
photo diode array InGaAs
Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
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G8909-01 SE-171 KIRD1053E02 photo diode array InGaAs G8909-01 InGaAs photodiode array chip KIRD1053E02 | |
InGaAs photodiode array chip
Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
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G8909-01 SE-171 KIRD1053E01 InGaAs photodiode array chip G8909-01 KIRD1053E01 50 um photodiode | |
Selection guideContextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high |
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KIRD0005E02 Selection guide | |
Contextual Info: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは |
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Selection guide
Abstract: Infrared detectors P13243-011MA
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KIRD0001E08 Selection guide Infrared detectors P13243-011MA | |
Contextual Info: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value |
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G8909-01 KIRD1053E03 |