MODULE RBSOA Search Results

R1200

Contextual Info: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module

Contextual Info: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module

Contextual Info: FF 50 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,25 DC, pro Baustein / per module RthJC 0,50 DC, pro Baustein / per module 0,06 pro Baustein / per module RthCK 0,12 pro Baustein / per module Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.

MBN1200H45

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.

300R06

Contextual Info: FF 300 R 06 KL 2 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,05 DC, pro Baustein / per module 0,1 pro Baustein / per module 0,03 R th C K 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES  Low conduction loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09017 R8 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.

kme-3 baustein

Contextual Info: FF 300 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Maximum rated values Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0 ,0 5 RthJC DC, pro Baustein / per module 0 ,1 pro Baustein / per module

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06028 R3 MBN1200H33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

AN4502

Abstract: AN4503 AN4505 AN4506 GP400DDS12
Contextual Info: GP400DDS12 GP400DDS12 Powerline N-Channel Dual Switch IGBT Module DS5341-1.1 February 2000 The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage applications

DS51721

Abstract: bipolar transistor td tr ts tf
Contextual Info: GP800DDS12-ABC GP800DDS12-ABC Powerline N-Channel IGBT Module DS5172-1.2 May 1999 The GP800DDS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

MBN1200H33D

Abstract: 06028
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06028 R2 P1/9 MBN1200H33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

MBN800E33D

Abstract: MBN800
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R4 P1 MBN800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

fuji igbt module

Contextual Info: P011.02 TM Dual channel low cost gate driver board for PrimePACK IGBT module General description Features • Ready to use gate driver board for PrimePACK TM • Suitable for PrimePACK TM TM 2 and PrimePACK IGBT module 3 IGBT module • Suitable for chopper, two- and multi-level inverter topologies

eupec igbt

Abstract: Eupec Power Semiconductors
Contextual Info: MARKETING NEWS from Europe for the World European PowerSemiconductor and Electronics Company Introduction of a typical module lead resistance and chip-related on-state characteristics in the data sheets Typical module lead resistance Effective now all data sheets released for new module types will include a value for the lead

Contextual Info: MARKETING NEWS from Europe for the World European PowerSemiconductor and Electronics Company Introduction of a typical module lead resistance and chip-related on-state characteristics in the data sheets Typical module lead resistance Effective now all data sheets released for new module types will include a value for the lead

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M HPM 7B 25A 120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase

BSM150GXL120DN2

Abstract: 150 GXL 120 DN2 ,igbtmodule
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXL 120 DN2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM150GXL120DN2

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXL 120 DN2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM150GXR120DN2

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

150-12SE

Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Contextual Info: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT