MODELS 174, 175, 176 Search Results

MERP12-24121BG

Abstract: smd m7 MERPS11-15213 MERP12-24225M MER11-15125B OR-2020 MERP12-24115
Contextual Info: 8 Encoder MER 9 / MERP 9 174–175 MER 11 / MERS 11 / MERP 11 / MERPS 11 176–178 MER 12 / MERP 12 179–181 illuminated MER 23 182 MRP 183 | 173 Encoder Specifications: Contact rating: Contact resistance: Insulation resistance: Dielectric strength: Operating temperature:

j1n transistor

Abstract: 228 AN c60 equivalent MODELS 248, 249 R101 RT1405B6 R69-R70
Contextual Info: THIS INFORMATION IS NOT AN OFFER FOR SALE. CTS MAKES NO WARRANTY, INCLUDING WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, WITH RESPECT TO THE REFERENCED PRODUCTS OR THE SPICE MODELS. CTS DOES NOT GUARANTEE THE ACCURACY OF RESULTS ACHIEVED WITH THE SPICE

RT1404B7

Abstract: j1n transistor MODELS 248, 249 CTS 206 R101 R102 R104 d2n c60
Contextual Info: THIS INFORMATION IS NOT AN OFFER FOR SALE. CTS MAKES NO WARRANTY, INCLUDING WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, WITH RESPECT TO THE REFERENCED PRODUCTS OR THE SPICE MODELS. CTS DOES NOT GUARANTEE THE ACCURACY OF RESULTS ACHIEVED WITH THE SPICE

j1n transistor

Abstract: MODELS 248, 249 RT1405B7
Contextual Info: THIS INFORMATION IS NOT AN OFFER FOR SALE. CTS MAKES NO WARRANTY, INCLUDING WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, WITH RESPECT TO THE REFERENCED PRODUCTS OR THE SPICE MODELS. CTS DOES NOT GUARANTEE THE ACCURACY OF RESULTS ACHIEVED WITH THE SPICE

j1n transistor

Abstract: g1n transistor MODELS 248, 249 R101 R102 R104 RT1404B6 c38 06 D1N190 merlin+gerin+catalogue+1980
Contextual Info: THIS INFORMATION IS NOT AN OFFER FOR SALE. CTS MAKES NO WARRANTY, INCLUDING WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, WITH RESPECT TO THE REFERENCED PRODUCTS OR THE SPICE MODELS. CTS DOES NOT GUARANTEE THE ACCURACY OF RESULTS ACHIEVED WITH THE SPICE

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

RSY-5

Abstract: CF005-01 celeritek CF003-01 CF010-01 celeritek ghz a32g 3620q
Contextual Info: Broadband Power GaAs MESFET Chips □ PjdB P°wer: A CF003-01: +22 dBm CF005-01: +25 dBm CF010-01: +28 dBm □ High Gain @ 12 GHz : CF003-01: 9.0 dB CF005-01: 8.5 dB CF010-01: 8.0 dB “ A A □ Broadband: Usable to 18 GHz □ Wafer Qualification Procedure

M9MZ60GK4YGA

Abstract: M61X6G4GGA M9MZ60GK4CGA M7RX15GB4GGA M8MX25GK4CGA M9MX40GK4CGA M9RX40GK4GG1 M8RX25GK4GG1 M81X25GK4GGA M9MZ90GR4YG1
Contextual Info: Panasonic Panasonic, one of the largest motor manufacturers in the world, have designed and developed a new range of globally approved geared motors. Covering powers from 2 ➤ Sealed for life gearboxes offer a long and maintenance free service life ➤ Global approval on all models

CF005-01

Abstract: 117450 CF003-01 CF010-01 a32g
Contextual Info: Broadband Power GaAs Chips Specifications T^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted A c tiv e Layer Symbol G|_ p1dB Frequency (GHz) Units Linear Power Gain V q s = 6-0 V, iQg = 80 mA V q s = 6-0 Iqq = 160 mA V q s = 6.0 V, Iq 5 = 300 mA

Contextual Info: Broadband Power GaAs Chips Specifications T ^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted Active Layer Frequency (GHz) Units Linear Power Gain Vqs = 6.0 V, Iq 3 = 80 mA Vqs = 6-0 V, Iqs = 160 mA VDS = 6.0 V, lDS = 300 mA

MSA-1000

Contextual Info: 1 H EW L E T T WL'nM PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1000 Features • High Output Power: +27 dBm Typical Pi at 1.0 GHz • Low Distortion: 37 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Impedance Matched to 25 ft

j608

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

j608

Abstract: 10R1 MRF6522-10R1
Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

Contextual Info: What h e w i-ETT mL'KMPACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1000 F eatures • High Output Power: +27 dBm Typical at 1.0 GHz • Low Distortion: 37 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Impedance Matched to 25 Q

MSA-1000

Abstract: MSA-1000-GP4
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1000 amplifiers in industrial and military systems. Features • High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz 3 • Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at

MSA-1000-GP4

Abstract: MSA-1000-GP6
Contextual Info: m HEW LETT PACKARD MSA-1000 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features Chip Outline1 • High Output Power: +27 dBm typical P1dB at 1.0 GHz • Low Distortion: 37 dBm typical IP3 at 1.0 GHz • 8.5 dB typical Gain at 1.0 GHz

Avantek amplifier

Abstract: MSA-1000-GP4 MSA-1000-GP6 AVANTEK Avantek power amplifier MSA-1000 MSA-1000-GP2 Avantek amplifier 167 SU 179 avantek microwave
Contextual Info: d a ta sheet DEC 1 ü 1330 0 A V A N TEK M SA-1000 M O DAM P C ascadable Silicon Bipolar M onolithic M icrow ave Integrated C ircuit Am plifiers January, 1990 Avantek Chip Outline1 Features • • • • High Output Power: +27 dBm typical Pi <jb at t.O GHz

avantek microwave

Contextual Info: data sheet DEC 1 li 1330 AVANTEK M SA-1000 M O DAM P C ascadable Silicon Bipolar M onolithic M icrow ave Integrated C ircuit Am plifiers January, 1990 Avantek Chip Outline1 Features • • • • High Output Power: +27 dBm typical Pi dB at 1.0 GHz Low Distortion: 37 dBm typical IP3 at 1.0 GHz

Contextual Info: HEWLETT-PACKARD/ CflPNTS WLTM HEWLETT wSHM PACKARD blE » • 44M7584 DDlQ13b 607 « H P A MSA-1000 Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers MODAMP Features Chip Outline 1 • High Output Power: +27 dBm typical P1 jb at

Contextual Info: Terminations & Loads Terminations . . . dc-50 GHz, 1 to 25 Watts Frequency Range GHz Average Power (Watts) Peak Power (kW) SWR Connector Type Page No. 1 1404N dc-18.0 1 1 1.02-1.08* N 159 1 1406A 1 1408 dc-18.0 2 0.5 1.05-1.21* 1.04-1.15* SMA 160 1 RS3016

871F-N65BP80-H2

Abstract: 871F-D70NP50-D4 871F-D70NN50-D4 871F-N65BP80-N4 871F-P50BN80-T4
Contextual Info: Inductive Proximity Sensors Bulletin 871F Flat Pack and Block Styles Description Features Styles Bulletin 871F inductive flat pack and block style proximity sensors are self-contained, solid state devices. These devices are designed for most applications where it is required to

Contextual Info: m H E W LE T T PACKARD MSA-0786 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 86 Plastic Package • Cascadable 50 £i Gain Block • Low Operating Voltage 4.0 V typical Vd • 3 dB Bandwidth: DC to 2.0 GHz

RPX 200

Contextual Info: RAYTTTTöN" COV MXCROUJAVE 70 & Raytheon Company Special Microwave Devices Operation v 75T?E21 □□□□401 □ 617 393 7300 Bearfoot Road ' Northboroligh, M A O 1532 - O f 7597221 RAYTHEON ICO» MICROWAVE £ 760-00401 RPX 6000 Series X-Band Power GaAs FET s

HP900

Abstract: NAT-1 3M S11A jl6g MAN1A STRM-50 ZHL-4240 NP300 mav-3sm BLP-10.7
Contextual Info: Model Index • D ot indicate s surface m o u rt models. mixers • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •