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    MOBILE RF POWER AMPLIFIER TRANSISTOR Search Results

    MOBILE RF POWER AMPLIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LXMS21NCMH-230
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LBAA0QB1SJ-295
    Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU PDF
    GRM-KIT-OVER100-DE-D
    Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit PDF
    LBUA5QJ2AB-828
    Murata Manufacturing Co Ltd QORVO UWB MODULE PDF

    MOBILE RF POWER AMPLIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking C3E

    Abstract: PC2771T Transistor C3E nH/Transistor C3E
    Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8181TB 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


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    PC8181TB PC8181TB marking C3E PC2771T Transistor C3E nH/Transistor C3E PDF

    marking 3f 6pin

    Abstract: PC2771T marking C3f F MARKING 6PIN
    Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


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    PC8182TB PC8182TB marking 3f 6pin PC2771T marking C3f F MARKING 6PIN PDF

    MARKING C3F

    Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
    Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


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    PC8182TB PC8182TB HS350 WS260 VP215 IR260 PU10206EJ01V0DS MARKING C3F PC8181TB F MARKING 6PIN transistor marking wt PDF

    RA30H4452M

    Abstract: RA30H4452M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-101 PDF

    RA33H1516M1

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


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    RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz PDF

    RA20H8087M

    Abstract: RA20H8087M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to


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    RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-101 PDF

    RA30H3340M

    Abstract: RA30H3340M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


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    RA30H3340M 330-400MHz RA30H3340M 30-watt 400-MHz RA30H3340M-101 PDF

    RA60H3847M1

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to


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    RA60H3847M1 378-470MHz RA60H3847M1 60-watt 470-MHz PDF

    RA45H4047M

    Abstract: RA45H4047M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


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    RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz RA45H4047M-101 PDF

    RA30H4552M1

    Abstract: RA30H4552M1-101 st 074c
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to


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    450-520MHz RA30H4552M1 30-watt 520-MHz RA30H4552M1 RA30H4552M1-101 st 074c PDF

    C741C

    Abstract: RA13H1317M RA13H1317M-101 RA55H4047M 741C op amp
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA13H1317M 135-175MHz RA13H1317M 13-watt 175-MHz RA55H4047M C741C RA13H1317M-101 RA55H4047M 741C op amp PDF

    RA18H1213G

    Abstract: RA18H1213G-101 263rd dd408
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to


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    RA18H1213G 30GHz RA18H1213G 18-watt 30-GHz RA18H1213G-101 263rd dd408 PDF

    RA13H4047M

    Abstract: RA13H4047M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


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    RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz RA13H4047M-101 PDF

    RA55H4452M

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz PDF

    RA55H4047M

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4047M RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


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    RA55H4047M 400-470MHz RA55H4047M 55-watt 470-MHz PDF

    RA55H3340M

    Abstract: RA55H3340M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M RoHS Compliance, 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


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    RA55H3340M 330-400MHz RA55H3340M 55-watt 400-MHz RA55H3340M-101 PDF

    st 074c

    Abstract: RA30H4047M1 transistor a 1941 RA30H4047 rf power amplifier circuit by 400-470mhz
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


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    400-470MHz RA30H4047M1 30-watt 470-MHz RA30H4047M1 st 074c transistor a 1941 RA30H4047 rf power amplifier circuit by 400-470mhz PDF

    RA45H8994M1

    Abstract: RA45H8994M1-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to


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    RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz RA45H8994M1-101 PDF

    RA45H7687M1

    Abstract: RA45H7687M1-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to


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    RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 PDF

    mosfet 13w 05

    Abstract: RA13H8891MA RA13H8891MA-101 MOSFET Power Amplifier Module 900Mhz
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


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    RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz mosfet 13w 05 RA13H8891MA-101 MOSFET Power Amplifier Module 900Mhz PDF

    RA30H1317M

    Abstract: RA30H1317M-101 W905
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz RA30H1317M-101 W905 PDF

    RA13H8891MB-101

    Abstract: H11S MOSFET Power Amplifier Module 900Mhz
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


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    RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz RA13H8891MB-101 H11S MOSFET Power Amplifier Module 900Mhz PDF

    RA35H1516M

    Abstract: RA35H1516M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


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    RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101 PDF

    RA55H4047M

    Abstract: RA30H0608M RA30H0608M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to


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    RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz RA55H4047M RA55H4047M RA30H0608M-101 PDF