MN101CF Search Results

Contextual Info: MN101CA5 Series MN101CA5F MN101CFA5G Mask ROM FLASH ROM byte 96K 128K RAM (byte) 4K 10K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP112-P-2020 (ES (Engineering Sample) available) 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz)

Contextual Info: MN101C73 Series Type Internal ROM type MN101C73A MN101CF73A Mask ROM FLASH 32K ROM byte 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time 2K LQFP064-P-1414, TQFP064-P-1010C 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)*

Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C58 Series MN101C589 Type MN101C58A Mask ROM Internal ROM type 24K ROM byte 32K 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101CF58D MN101CP58A FLASH EPROM 64K 32K 2K 1.5K LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)

kaseikyo

Contextual Info: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)

Contextual Info: MN101CF87GBL CCR20.0MXC7 Tc p 25 Cdeg] a. U1H/U1L [U1 Q 0 Tupical — ~ * Unrst UIH sUIL eb. U2H/U2L CU] U2H b- U2L sc. Fosc .3 .1 -.1 -.3 -.5 400 300 200 100 60 55 50 45 40 EX] d, Trise i, Duty CuSl EX] Udd f. Ustart CU] m Typical = I.84 Worst = 1.86 g. Uhold

Contextual Info: MN101CF87GBL - I FCR8.0MC5 Fig.a~e Udd= 5 EU] 0-B Typical V -•i ' , , mi, 'ifb. U2H/U2L CU] U2H V -tf, -i ' , A - 1 -0- d a. U1H/U1L CU1 mim V V bA4 V ,U?li "'1- c. Fosc 5 EX] . - -Vu 1 - r ^ r - _ _ 3 -•ff5 -.3 J I I I d, Trise

MN101C79A

Abstract: pwm control matsushita
Contextual Info: MN101C79A MN101C79A Type Internal ROM type MN101CF79A Mask ROM FLASH ROM byte 32K RAM (byte) 1.5K Package (Lead-free) Minimum Instruction Execution Time QFN044-P-0606A 0.100 µs (at 3.0 V to 3.6 V, 10 MHz) 0.118 µs (at 2.7 V to 3.6 V, 8.5 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)*

Contextual Info: Vdd 9,35,36 8,12,15 MN101CF88GXA OSC1 11 1 OSC2 10 FCR8.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=20/20pF +/-20% Oscillating circuit for evaluation

MN101CF57D

Contextual Info: Vdd 17,19,39,40 11,14,18,49 MN101CF57D OSC1 12 1 OSC2 13 CCR20.0MXC7 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=8/8pF +/-2pF Oscillating circuit for evaluation

FCR16

Contextual Info: Vdd 9,35,36 8,12,15 MN101CF88GXA OSC1 11 OSC2 10 FCR16.0M2G 1 2 V1H/V1L V2H/V2L CL1 CL2 5pF 5pF Oscillating circuit for evaluation

Contextual Info: MN101C66 Series MN101C66D Type MN101C66G Mask ROM Internal ROM type ROM byte 64K 128K RAM (byte) 2K 4K MN101CF66G MN101CP66D FLASH EPROM 64K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering Sample) available), LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E

Contextual Info: MN101C54 Series MN101C54A Type MN101C54C Mask ROM Internal ROM type 32K ROM byte 48K MN101CF54D MN101CP54C FLASH EPROM 64K 48K QFP084-P-1818E LQFP080-P-1414A, QFP084-P-1818E 2K RAM (byte) LQFP080-P-1414A, QFP084-P-1818E Package (Lead-free) 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)

OSD ic

Contextual Info: MN101C46F Type MN101C46F Internal ROM type Mask ROM MN101CF46F FLASH ROM byte 96K RAM (byte) 3K SDIP042-P-0600C Package (Lead-free) Minimum Instruction Execution Time SDIP042-P-0600C (ES (Engineering Sample) available) 279 ns (3.0 V to 3.6 V, 14.32 MHz)

Contextual Info: MN101C73A MN101C73A Type Internal ROM type Mask ROM Package Lead-free Minimum Instruction Execution Time FLASH 32K ROM (byte) RAM (byte) MN101CF73A 1.5K 2K LQFP064-P-1414, TQFP064-P-1010C 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)*

MN101C91

Contextual Info: MN101C91 Series MN101CF91D Type FLASH Internal ROM type ROM byte 64K RAM (byte) 4K Package (Lead-free) Minimum Instruction Execution Time TQFP048-P-0707B 0.1 µs (at 2.7 V to 3.6 V, 10 MHz) 62.5 µs (at 2.7 V to 3.6 V, 32 kHz) • Interrupts RESET. Watchdog. External 0 to 5. External 6 (key interrupt dedicated). Timer 0 to 4. Timer 6. Timer 7 (2 systems). Timer 8 (2 systems).

Contextual Info: MN101C88 Series MN101C88D Type ROM byte 64K RAM (byte) 2K Package (Lead-free) Minimum Instruction Execution Time MN101C88F MN101C88G MN101CF88G Mask ROM Internal ROM type FLASH 96K 128K 4K 10K QFP100-P-1818B QFP100-P-1818B QFP100-P-1818B (Under planning)

Contextual Info: MN101C95 Series MN101CF95F Type MN101CF95G FLASH Internal ROM type ROM byte 96K 128K RAM (byte) 4K 6K Package (Lead-free) TQFP080-P-1212D (Under planning) Minimum Instruction Execution Time TQFP080-P-1212D [Standard] 0.2 µs (at 2.7 V to 3.6 V, 10 MHz) 0.5 µs (at 2.7 V to 3.6 V, 4 MHz)

Contextual Info: MN101C58 Series MN101C589 Type MN101C58A Mask ROM Internal ROM type 24K ROM byte 32K 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101CF58D MN101CP58A FLASH EPROM 64K 32K 2K 1.5K LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)

33P53

Contextual Info: MN101CF96D, MN101CF96F Type MN101CF96D under planning MN101CF96F (under planning) ROM (x× 8-bit) 64K 96K RAM (×× 8-bit) 3K Package Minimum Instruction Execution Time 6K LQFP064-P-1414 *Lead-free 0.2 µs (at 2.7 V to 3.6 V, 10 MHz)* 0.5 µs (at 2.7 V to 3.6 V, 4 MHz)*

MN101C94

Abstract: PX-PRB101C94-QFP044-P-1010
Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C93 Series Type Internal ROM type MN101C93K MN101CF93K Mask ROM FLASH ROM byte 224K RAM (byte) 6K Package (Lead-free) Minimum Instruction Execution Time LQFP100-P-1414 0.125 µs (at 3.0 V to 3.6 V, 8 MHz) 62.5 µs (at 3.0 V to 3.6 V, 32 kHz) 0.167 µs (at 3.0 V to 3.6 V, 6 MHz)

Contextual Info: MN101C62D, MN101C62F MN101C62D Type MN101C62F Mask ROM Internal ROM type MN101CF62G FLASH ROM byte 64K 96K 128K RAM (byte) 2K 4K 10K Package (Lead-free) Minimum Instruction Execution Time LQFP080-P-1414A [Standard] 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)

Contextual Info: MN101C87 Series MN101C87A Type MN101C87D Mask ROM Internal ROM type MN101CF87G FLASH ROM byte 32K 64K 128K RAM (byte) 1.5K 2K 4K Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz)