MN101C49 Search Results

Contextual Info: MN101C49KRR - 1 FC R4 .0M C 5 Ta= 20 [d e g ] G- 0 Typ i c a l 7 a. V 1 H /V 1 L [V ] *- * W o rst 5 3 V1H 1 -1 7 V 1L, b. V 2 H /V 2 L Q- [V ] 5 3 VEH 1 -1 .5 .3 .1 1 -.3 -.5 400 V2L, » - g c. Fosc [/J] _ l_I_ I_I_ I_I_I_L_

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free

MN101C49K

Abstract: MN101C49 MN101C49G MN101C49H QFP100-P-1818B
Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G [ES(Engineering Sample) available] MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B Minimum Instruction

Contextual Info: MN101C49 Series MN101C49G Type Internal ROM type MN101C49H MN101CF49K MN101CP49K Mask ROM MN101C49K FLASH EPROM ROM byte 128K 160K 224K RAM (byte) 4K 6K 10K LQFP100-P-1414, QFP100-P-1818B [Standard] 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)

FCR16

Abstract: 68B2 6.8b2
Contextual Info: MN101C49KRR - 1 F C R 1 6 . 0M2G Vdd= 5 [V ] F ig .a ~ d Ta= •- • ? a. V IH / V IL [d e g ] T y p ic a l [V ] - 4.7 • V IH - 20 4.7 4.7 4.7 - 4.B - - .1 V 11 i b. i i - i i 5.1 5 5 4.9 i .1 .1 .3 i i i .1 i i i i [V ] 5 3 i— V2H .1 i i V2H/V2L

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time

Contextual Info: Vdd MN101C49KAA OSC1 13 1 OSC2 12 FCR4.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time

Contextual Info: MN101C49 Series MN101C49G Type Internal ROM type MN101C49H MN101CF49K MN101CP49K Mask ROM MN101C49K FLASH EPROM ROM byte 128K 160K 224K RAM (byte) 4K 6K 10K LQFP100-P-1414, QFP100-P-1818B [Standard] 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)

MN101C49G

Abstract: MN101C49H MN101C49K QFP100-P-1818B
Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time

block diagram for automatic room power control

Abstract: mitsubishi fx what is the output for a 14 stage ripple counter panasonic inverter manual TRANSISTOR BO 346 CATHODE RAY TUBE television internal parts block diagram SLC 5/03 china model inverter circuit diagram remote control with 4 channels
Contextual Info: MICROCOMPUTER MN101C MN101C49G/49H/49K/F49K/P49K LSI User’s Manual Pub.No.21449-041E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their

bl-27 MHz

Contextual Info: MN101C49KRR - 1 F C R 8 .0 M C 5 Ta= 20 [d e g ] G-0 T y p i c a l 7 a. V1H/V1L [V ] *-* W orst 5 3 V1H 1 V1L, 8— q- -1 7 b. V2H/V2L [V ] 5 3 VEH 1 VEL -1 .5 .3 . 1 0— 9 - _l_I_ I_L_ c. Fosc [/ J] 1 - .3 - .5 400 _ I_I_ I_I_ I_I_I_I_ L_

FCR16

Abstract: OSC1
Contextual Info: Vdd MN101C49KAA OSC1 13 OSC2 12 FCR16.0M2G 1 2 V1H/V1L V2H/V2L Oscillating circuit for evaluation

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x×8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (××8-bit) External memory can be expanded Package QFP100-P-1818B *Pb free Minimum Instruction Execution Time

eeprom 2064

Abstract: 2Mbit EPROM P02N MN101C49
Contextual Info: MICROCOMPUTER MN101C MN101C49G/49H/49K LSI User’s Manual Pub.No.21449-040E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x×8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (××8-bit) External memory can be expanded Package QFP100-P-1818B *Pb free Minimum Instruction Execution Time

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free

QFP100 P 1818B

Abstract: MN101C49G MN101C49H MN101C49K QFP100-P-1818B
Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time

ISO 7811-6

Abstract: P1337 MN101C49K MN101C49 MN101C49G DA21B da21bu MM 5451 YU MN101C00 MN101C49H
Contextual Info: MICROCOMPUTER MN101C00 MN101C49G/49H/49K LSI 説明書 Pub.No.21449-030 PanaXSeriesは松下電器産業株式会社の商標です。 その他記載された会社名及びロゴ、製品名などは該当する各社の商標または登録商標です。

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Pb free Minimum Instruction Execution Time

Contextual Info: MN101C49G , MN101C49H , MN101C49K Type ROM x× 8-bit MN101C49G MN101C49H MN101C49K 128 K 160 K 224 K 4K 6K 10 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Pb free Minimum Instruction Execution Time

MN101C49

Contextual Info: MN101C49 Series MN101C49G Type Internal ROM type MN101C49H MN101CF49K MN101CP49K Mask ROM MN101C49K FLASH EPROM ROM byte 128K 160K 224K RAM (byte) 4K 6K 10K LQFP100-P-1414, QFP100-P-1818B [Standard] 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)

MN101C49G

Abstract: MN101C49 MN101C49H MN101C49K MN101CF49K MN101CP49K QFP100-P-1818B MN101CF49
Contextual Info: MN101C49 Series MN101C49G Type Internal ROM type MN101C49H MN101CF49K MN101CP49K Mask ROM MN101C49K FLASH EPROM ROM byte 128K 160K 224K RAM (byte) 4K 6K 10K LQFP100-P-1414, QFP100-P-1818B [Standard] 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)

MN101C49G

Abstract: QFP100-P-1818B OMT software
Contextual Info: Q M N 1 0 1 C 4 9 G / 4 9 K MN101C49G under planning / 49K (under planning) 1 Type 1 ROM 8-Bit) 128 K / 224 K (External memory can be expanded) 1 RAM (x8-Bit) 4 096 /1 0 240 (External memory can be expanded) 1 Minimum Instruction Execution Time ( Standard: