MMIC MARKING CODE R Search Results

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

SMA MARKING 1475

Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

MMIC SOT 143 marking CODE 77

Abstract: MARKING SOT-143 C5
Contextual Info: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

MMIC SOT 143 marking CODE 77

Abstract: MMIC marking 77 CGY50 Q68000-A8370 MMIC marking code U MARKING SOT-143 C5
Contextual Info: SIEMENS GaAs MMIC CG Y 50 D a t a s h e e t * Single-stage monolithic microwave 1C MMICam plifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz

MMIC marking code 101

Abstract: siemens rs 806 siemens rs 1006 MMIC code 420 marking 340 mmic MMIC marking code R
Contextual Info: SIEMENS GaAs MMIC CGY62 Datasheet * Two-stage microwave broadband amplifier 1C * 50 Q input / output 'O perating voltage range: 2.7 to 5 V * High gain and output power typ.: G=20 dB, P.lrtB=17,5 dBm @ 4.5V, 1GHz * Frequency range 200 MHz . 2.5 GHz ESD:

CGY62

Abstract: Q68000-A8787 HL 941
Contextual Info: CGY 62 GaAs MMIC Datasheet * Two-stage microwave broadband amplifier IC * 50 Ω input / output * Operating voltage range: 2.7 to 5 V * High gain and output power

Contextual Info: SIEMENS CGY 52 GaAs MMIC D a t a s h e e t * Two stages monolithic microwave IC MMICAmpiifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V * 50 £2 input / output 5 - _ , ESD: Electrostatic discharge sensitive device,

RF MODULE CIRCUIT DIAGRAM dect

Abstract: DECT siemens MMIC marking code R
Contextual Info: SIEMENS GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 ii, simple output match ESD: Electrostatic discharge sensitive device,

Contextual Info: Product Data Sheet 32 dBm Ku-Band Amplifier TGA2503-SM Key Features • • • • • • • Typical Frequency Range: 12.5 - 16 GHz 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA

A11Z

Abstract: trace code marking RFMD SGA-1163Z marking 478 mmic sga1163z SGA-1163 MARKING CODE a11 sot363 DS090924 sga-3463 z MARKING RFMD
Contextual Info: SGA-1163 Z SGA-1163(Z) DC to 6000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 6000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Product Description Features Gain & Return Loss vs. Frequency 16 InGaP HBT GAIN 12 GaAs pHEMT -10

MARKING SMD IC CODE 2100

Abstract: VD F1 SMD B10T smd marking code bs Capacitor Tantal SMD MARKING SMD IC CODE 10 pin SIEMENS CAPACITOR SIEMENS svp p 181 y 1R31
Contextual Info: • flE35b05 QO'ìDbi4 2 1 3 m SIEM ENS GaAsMMIC CGY181 Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 £2, simple output match

Contextual Info: SIEMENS CM Y 200 GaAs MM 1C P r e l i m i n a r y Da t a * Ultralinear Downconverter 1200MHz to 40MHz * Operating Voltage Range: 3 to 6V * Very low Current Consumption, typ. 45mA GN D * Single ended Input and Output * RF- and IF-Port Impedance close to 50 Ohm

726-BGB741L7ESDE63

Abstract: MMIC marking code R bgb741l7esd e6327 BGB741L7 BGB741 GAIN/S21
Contextual Info: D a t a S h e e t , R e v . 1 . 0 , A p r i l 2 00 9 BGB741L7ESD E S D - R o b u s t a n d E a s y - T o - U s e B r o a d b a nd L N A MMIC RF & Protection Devices Edition 2009-04-17 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2009.

Contextual Info: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply

x16 3 marking -ddr -sdram -rimm -sram -flash -m

Abstract: CGY52 Q68000-A8615 mmic-amplifier 7CH150
Contextual Info: SIEMENS GaAs MM IC CGY 52 Datasheet * Two stages monolithic microwave 1C MMICAmplifier * All gold metallisation *C h ip fully passivated •O perating voltage range: 2.7 to 5 V *5 0 Q input / output ESD: Electrostatic discharge sensitive device, observe handling precautions!

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Contextual Info: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Features Product Description Functional Diagram The MH203A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ’s MH203A uses patented techniques

ERA-1 MAR

Abstract: MMIC marking code R
Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-1 Amplifier print this page ERA-1 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute

Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-5 Amplifier print this page ERA-5 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute

MMIC marking code R

Abstract: ERA-3 RF MMIC MARK CODE -03 vv105 mini
Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-3 Amplifier print this page ERA-3 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR 3 3 2,4 75 35 330 3.20 154 Notes: Pin Connections Port RF in RF Out DC Case GND Not Used 1 DC Power

Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-4 Amplifier print this page MAR-4 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device

MAR-2 MMIC

Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-2 Amplifier print this page MAR-2 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device