MMIC CORE CHIP Search Results

Contextual Info: SMM5139XZ 12.7 – 15.4GHz Down converter MMIC FEATURES • Wafer Level Chip Size Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier, Low Noise Amplifier • 10dB Conversion Gain • 2.5dB Noise Figure • +2dBm Input Third Order Intercept Point IIP3

Contextual Info: SMM5142XZ 17.7 – 23.6GHz Down converter MMIC FEATURES • Wafer Level Chip Size Package with Solder Balｌ • Integrated Balanced Mixer, Low Noise Amplifier, LO Buffer Amplifier and x2 multiplier • 10dB Conversion Gain • 2.6dB Noise Figure • +2dBm Input Third Order Intercept Point IIP3

Contextual Info: SMM5138XZ 12.7 – 15.4GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier • Conversion Gain : -13dB • Input Third Order Intercept IIP3 : +22dBm • LO-RF Isolation : 30dBc

Contextual Info: SMM5145XZ 12.7 – 15.4GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept IIP3 : +22dBm • 2LO-RF Isolation : 45dB

JEP95 MS-028

Contextual Info: SMM5146XZ 12.7 – 15.4GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier, Low Noise Amplifier and x2 multiplier • 10dB Conversion Gain :10dB • Input Third Order Intercept Point IIP3 : +2dBm

Contextual Info: Preliminary ES/SMM5141XZ 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

Contextual Info: ES/SMM5141XZ Preliminary 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

Contextual Info: SMM5722XZ 12 – 16GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Low Noise Figure : NF=2.3dB typ. • High Associated Gain : Gas=20dB (typ.) • Input Third Order Intercept Point (IIP3) : +5dBm • Low Current Consumption : IDD_LNA=30mA

JEP95 MS-028

Contextual Info: ES/SMM5723XZ Preliminary 17 – 24GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Low Noise Figure : NF=2.7dB typ. • High Associated Gain : Gas=20dB (typ.) • Input Third Order Intercept Point (IIP3) : +4dBm

Contextual Info: SMM5139XZ 12.7 – 15.4GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier, Low Noise Amplifier • Conversion Gain : 10dB • Input Third Order Intercept Point IIP3 : +2dBm

Contextual Info: Preliminary ES/SMM5143XZ 24 – 30GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +24dBm

Contextual Info: Preliminary ES/SMM5144XZ 24– 30GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, Low Noise Amplifier, LO Buffer Amplifier and x2 multiplier • Conversion Gain : 12dB • Input Third Order Intercept Point IIP3 :+2dBm

mmic core chip

Contextual Info: GaAs PIN MMIC SPDT Switch 2-18 GHz AP218R2-00 Features Bias 1 • w Loss, < 2.0 dB ■ High Isolation, > 50 dB ■ Good Return Loss, < - 9 dB ■ Broad Bandwidth, 2 -1 8 G H z ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 75 mA Total at - 5 V ■

MIL-STD-2015

Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
Contextual Info: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low

wifi bluetooth combo Module

Abstract: RF5506 RF5516 RF5686 rf3482 RF5325 RF5345 RF5725 WIFI switch qfn 48 PACKAGE footprint
Contextual Info: RFMD. Mobile Computing: Front End Module Portfolio RFMD’s portfolio of single-chip integrated front end modules FEMs Applications: are designed for high-performance Wi-Fi applications in the 2.4 GHz • Mobile devices to 2.5 GHz ISM band. The RF3482, RF5501, RF5225, RF5325,

Amplifier Research rf power amplifier schematic

Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
Contextual Info: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating

ACA0861

Abstract: 0861A ACA0861A ACA0861B ACA0861C ACA0861D
Contextual Info: ACA0861 - A, B, C, D 750/860 MHz CATV Line Amplifier MMIC Data Sheet - Rev 2.1 FEATURES • Flat Gain • Very Low Distortion • Excellent Input/Output Match • Low DC Power Consumption • Good RF Stability with High VSWR Load Conditions • Surface Mount Package Compatible with

ACA0861

Abstract: ACA0861A ACA0861B ACA0861C ACA0861D ACA0861BRS7P2
Contextual Info: ACA0861 - A, B, C, D 750/860 MHz CATV Line Amplifier MMIC Data Sheet - Rev 2.2 FEATURES • Flat Gain • Very Low Distortion • Excellent Input/Output Match • Low DC Power Consumption • Good RF Stability with High VSWR Load Conditions • Surface Mount Package Compatible with

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

Contextual Info: TRF1123 www.ti.com SLWS167A – APRIL 2005 – REVISED JULY 2005 2.1-GHz to 2.7-GHz 1-W Power Amplifier FEATURES • • • • • • VPOS 1.5 W P-1 dBm Linear, 30-dB Gain Transmitter Operates Over the MMDS, MDS, and WCS Bands 2.1 GHz to 2.7 GHz Two TTL Controlled, 1-bit, 16-dB Gain Steps

4000 w power amplifier circuit diagram class d

Contextual Info: WJA1021 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • • 50 – 4000 MHz 17.5 dB Gain @ 1.9GHz +19 dBm P1dB @ 1.9GHz +37.5 dBm OIP3 @ 1.9GHz +5V Single Supply Low current draw 90mA Unconditionally stable Internally matched to 50 Ω

Contextual Info: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • 50 – 4000 MHz 15 dB Gain +17 dBm P1dB +38 dBm OIP3 +5V Single Voltage Supply Internal Active Bias Supply Internally matched to 50 Ω Lead-free / RoHS-compliant /

high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Contextual Info: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding

Contextual Info: WJA1021 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • • 50 – 4000 MHz 17.5 dB Gain @ 1.9GHz +19 dBm P1dB @ 1.9GHz +37.5 dBm OIP3 @ 1.9GHz +5V Single Supply Low current draw 90mA Unconditionally stable Internally matched to 50 Ω