MMIC CODE G Search Results

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

Reflow Soldering Guide

Abstract: berex
Contextual Info: BeRex Reflow Soldering Guide Application Note RF MMIC Innovator www.berex.com Classification: Reflow Soldering Document Number: Reflow61110 Revision code: 0.1 Reflow Soldering Guide for Surface Mount Devices Name Writer Date Signature BY KIM JH Bae OK Dr. Yoo

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

Contextual Info: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code

marking bms

Contextual Info: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

SMM5845V1

Abstract: MMIC marking code U
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

EMM5068

Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages

Contextual Info: EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES High Output Power: Pout=30.0dBm typ. Linear Gain: GL=15.0dB (typ.) Frequency Band: 29.5 to 30.0GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5841V1B is a MMIC amplifier that contains a threestages amplifier, internally matched, for standard communications

Contextual Info: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. Linear Gain: GL=25.0dB (typ.) Frequency Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Integrated Power Detector Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: EMM5836V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 17.7 to 19.7GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5836V1B is a MMIC amplifier that contains a four-stages

EMM5074VU

Abstract: EMM5074
Contextual Info: EMM5074VU C-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33dBm typ. High Linear Gain: GL=27dB (typ.) Broad Band: 5.8 to 8.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5074VU is a wide band power amplifier MMIC that

type pd21

Abstract: siemens inductor B82412-A3221-K B82412-A3471-K CMY91 Q62702-M9 MMIC marking CODE 06
Contextual Info: CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1mA typ.

EMM5832VU

Contextual Info: EMM5832VU K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=31.0dBm typ. High Linear Gain: GL=20.0dB (typ.) Broad Band: 21.2 to 26.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage

CDH60

Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Contextual Info: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability

Contextual Info: EMM5836V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: EMM5081V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (V1B) DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages

EMM5075VU

Contextual Info: EMM5075VU Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) Device DESCRIPTION The EMM5075VU is a MMIC amplifier that contains a three-stages