MMBT5551LTL Search Results
MMBT5551LTL Datasheets Context Search
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Contextual Info: SyrnSEM i SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5551LT1 TRANSISTOR NPN FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage V ( b r ) cbo : 180 V Operating and storage junction temperature range |
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MMBT5551LT1 MMBT5551LTl |