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    MMBT3906LT Search Results

    MMBT3906LT Datasheets (16)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MMBT3906LT1
    Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR SWITCHING PNP SOT-23 Original PDF 12
    MMBT3906LT1
    Leshan Radio Company General Purpose Transistor(PNP Silicon) Original PDF 223.89KB 5
    MMBT3906LT1
    Motorola GENERAL PURPOSE TRANSISTOR Original PDF 225.35KB 8
    MMBT3906LT1
    On Semiconductor General Purpose Transistor PNP Original PDF 102.8KB 8
    MMBT3906LT1
    On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF 155.73KB 7
    MMBT3906LT1
    On Semiconductor General Purpose Transistor Original PDF 100.64KB 8
    MMBT3906LT1
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    MMBT3906LT1/D
    On Semiconductor Motorola Preferred Device Original PDF 225.35KB 8
    MMBT3906LT1-D
    On Semiconductor General Purpose Transistor PNP Silicon Original PDF 100.65KB 8
    MMBT3906LT1G
    On Semiconductor Small Signal GP PNP Original PDF 99.47KB 6
    MMBT3906LT1G
    On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF 155.73KB 7
    MMBT3906LT1HTSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 40V 0.2A SOT-23 Original PDF 887.3KB
    MMBT3906LT3
    On Semiconductor Small Signal GP PNP Original PDF 99.47KB 6
    MMBT3906LT3
    On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF 155.73KB 7
    MMBT3906LT3G
    On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF 155.73KB 7
    MMBT3906LT3G
    On Semiconductor General Purpose Transistor(PNP Silicon) Original PDF 99.47KB 6
    SF Impression Pixel

    MMBT3906LT Price and Stock

    onsemi

    onsemi SMMBT3906LT1G

    Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
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    Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
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    onsemi SMMBT3906LT3G

    Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
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    Transistor: PNP; bipolar; 40V; 0.2A; 0.225/0.3W; SOT23,TO236AB
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    GENERAL PURPOSE TRANSISTOR PNP SILICON
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    MMBT3906LT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBT3906LT1G

    Abstract: MMBT3906LT3G 1N916
    Contextual Info: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original
    mmbt3906lt1gmmbt3906lt1/dmmbt3906lt3g1n916 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 SOT—23 TRANSISTOR( PNP ) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter 1.0 Power dissipation PCM :


    Original
    ot-23mmbt3906lt1100mhz037tpy+3950tpy550ref022ref PDF

    MMBT3906LT1G

    Abstract: MMBT3906LT3G 1N916
    Contextual Info: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original
    mmbt3906lt1gmmbt3906lt1/dmmbt3906lt3g1n916 PDF

    mmbt3904lti

    Contextual Info: RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic


    Original
    mmbt3906lt1ot-23mmbt3904ltimil-std-202e+2125oc-55oc PDF

    1N916

    Abstract: MMBT3906LT1
    Contextual Info: ON Semiconductort General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0


    Original
    mmbt3906lt1r14525mmbt3906lt1/d1n916 PDF

    Contextual Info: MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −40 Vdc Collector −Base Voltage VCBO


    Original
    mmbt3906lt1 PDF

    TRANSISTOR MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3904LT1
    Contextual Info: MMBT3904LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3906LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    mmbt3904lt1mmbt3906lt1225mwot-23+1transistor mmbt3904lt1 PDF

    TRANSISTOR MMBT3904LT1

    Contextual Info: MMBT3906LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3904LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    mmbt3906lt1mmbt3904lt1225mwot-23+1transistor mmbt3904lt1 PDF

    1N916

    Abstract: MMBT3906LT1
    Contextual Info: ON Semiconductort General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO


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    mmbt3906lt1r14525mmbt3906lt1/d1n916 PDF

    motorola MMBT3906LT1

    Abstract: 1N916 MMBT3906LT1
    Contextual Info: MOTOROLA Order this document by MMBT3906LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBT3906LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage


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    mmbt3906lt1/dmmbt3906lt1motorola mmbt3906lt11n916 PDF

    MOTOROLA DATE CODE MARKING

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBT3906LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


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    mmbt3906lt1236abmotorola date code marking PDF

    MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3906LT1 semtech
    Contextual Info: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage


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    mmbt3906lt1mmbt3904lt1ot-23100ma+1mmbt3906lt1 semtech PDF

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Contextual Info: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage


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    mmbt3906lt1mmbt3904lt1ot-23100ma PDF

    1N916

    Abstract: MMBT3906LT1
    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon MMBT3906LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage


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    mmbt3906lt1236ab1n916 PDF

    3020h

    Contextual Info: ON Semiconductort General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO


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    mmbt3906lt13020h PDF

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Contextual Info: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW


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    mmbt3906lt1ot-2397ref38ref+5225mwmmbt3904lt1-10ma100mhz300us PDF

    Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


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    ot-23mmbt3906lt1mmbt3904lt1-10ma+2-50ma100mhz PDF

    Contextual Info: : Sv m Se m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT3906LT1 TRANSISTOR SOT — 23 PNP 1. BASE 2. EM IH E R FEATURES 1 3. COLLECTOR Power d is s ip a tio n Pen : 02 W (Tamb=25 °C) C o lle c to r c u rre n t 1 cm : -0.2 A C o lle c to r base v o lta g e


    OCR Scan
    mmbt3906lt1ot-23950tpy037tpy+2550ref022ref PDF

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Contextual Info: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. Complementary Pair with MMBT3906LT1.


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    mmbt3904lt1ot-2397ref225mw+438refmmbt3906lt1100mhz300us PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.2 A ICM: Collector-base voltage


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    ot-23mmbt3906lt1-50ma-10ma+1-10madc PDF

    marking AT0

    Contextual Info: WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon


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    fm120-mmmbt3906lthrufm1200-mod-123+7od-123hfm150-mhfm160-mhfm180-mhfm1100-mhfm1150-mhmarking at0 PDF

    MMBT3906LT3G

    Abstract: 1N916 MMBT3906LT1 MMBT3906LT1G MMBT3906LT3
    Contextual Info: MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO -40 Vdc Collectorā-āBase Voltage VCBO


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    mmbt3906lt1mmbt3906lt1/dmmbt3906lt3g1n916+2mmbt3906lt1gmmbt3906lt3 PDF

    MMBT3904LT1

    Abstract: TRANSISTOR MMBT3904LT1 MMBT3906LT1 rs1kohms
    Contextual Info: MMBT3904LT1 NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


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    mmbt3904lt1mmbt3906lt1ot-23transistor mmbt3904lt1+1rs1kohms PDF

    1N916

    Abstract: MMBT3906LT1G MMBT3906LT3G
    Contextual Info: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


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    mmbt3906lt1gmmbt3906lt1/d1n916mmbt3906lt3g PDF